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Conference on Lasers and Electro-Optics

Wideband polarization insensitivity quantum dot optical amplifier

Takashi Kita, P. Jayavel, Hirokazu Tanaka, Kiang Wei Kho, Osamu Wada, Yoshihiro Nakata, T. Akiyama, H. Ebe, Mitsuru Sugawara, Jun Tatebayashi, Yasuhiko Arakawa

Published Jan 1, 2003• 1 citation
OpenAlex

Abstract

Polarization insensitivity of InAs/GaAs quantum dot optical amplifier has been demonstrated by controlling dot shape. This polarization insensitivity covers a bandwidth in excess of 40 nm.

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Time-resolved four-wave mixing in an InAs/InGaAs/GaAs electrically pumped quantum-dot amplifier is measured at room temperature for different applied bias currents going from optical absorption to gain of the device. The four-wave mixing signal from 140 fs pulses shows a transition from a delayed photon-echo response in the absorption regime to a prompt free polarization decay in the gain regime. This corresponds to a pronounced reduction of the dephasing time from 250 fs at zero bias to less than 50 fs at the maximum applied current. The four-wave mixing response at transparency of the device shows a composite structure with both photon echo and free-polarization decay. This is a signature of the digital occupation number in quantum dots, resulting at transparency in a signal from dots occupied with either zero or two excitons corresponding to absorption or gain of the dot ground state.
We measured the gain dynamics at the ground-state transition in an electrically pumped InP/AlGaInP quantum-dot optical amplifier at room temperature by femtosecond differential transmission. The gain shows an ultrafast recovery within 200 fs, even faster than in state-of-the-art InAs/GaAs quantum-dot amplifiers. This finding, likely to be due to the less confined and more closely spaced hole levels in InP dots, is promising for optical signal processing at high bit rates. We furthermore measured the pump-induced refractive index changes and deduced a linewidth enhancement factor similar to the one in InAs/GaAs quantum dots.