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Bulletin of the American Physical Society

Mott-like behavior in the pseudogap region of the Hubbard model

Dimitrios Galanakis, Karlis Mikelsons, Ehsan Khatami, Mark Jarrell, Alexandru Macridin, Michael Ma, Juana Moreno

Published Mar 17, 2009• 0 citations
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Recently developed numerical methods have enabled the explicit construction of the superconducting state of the Hubbard model of strongly correlated electrons in parameter regimes where the model also exhibits a pseudogap and a Mott insulating phase. d(x(2)-y(2)) symmetry superconductivity is found to occur in proximity to the Mott insulator, but separated from it by a pseudogapped nonsuperconducting phase. The superconducting transition temperature and order parameter amplitude are found to be maximal at the onset of the normal-state pseudogap. The emergence of superconductivity from the normal state pseudogap leads to a decrease in the excitation gap. All of these features are consistent with the observed behavior of the copper-oxide superconductors.
Numerical study of Fermi surface has been done using one-band Hubbard model with exact diagonalization method to study the effect of doping factor on Charge Density Wave (CDW) development in Anti ferromagnetic Mott Insulator (AFM) and pseudogap region in cuprate material. In this study the effect of CDW is characterized by Fermi Surface Nesting (FSN) vector in which it might be formed in pseudogap region. The wavelength of CDW increases when the value of disorder, which is representing the doping level in cuprate material, is increased. However, the CDW pattern will dissapear as the doping reaches the value which represented by Hubbard parameters: t = 1 eV, U = 4 eV, µ = 2 eV, and v i = -6 eV , marked by the decreasing of charge density wavelength.
The influence of disorder and pseudogap fluctuations on the Mott insulator-metal transition in strongly correlated systems has been studied in the framework of the generalized dynamic mean field theory (DMFT + Σ approach). Using the results of investigations of the density of states (DOS) and optical conductivity, a phase diagram (disorder-Hubbard interaction-temperature) is constructed for the paramagnetic Anderson-Hubbard model, which allows both the effects of strong electron correlations and the influence of strong disorder to be considered. Strong correlations are described using the DMFT, while a strong disorder is described using a generalized self-consistent theory of localization. The DOS and optical conductivity of the paramagnetic Hubbard model have been studied in a pseudogap state caused by antiferromagnetic spin (or charge) short-range order fluctuations with a finite correlation length, which have been modeled by a static Gaussian random field. The effect of a pseudogap on the Mott insulator-metal transition has been studied. It is established that, in both cases, the static Gaussian random field (related to the disorder or pseudogap fluctuations) leads to suppression of the Mott transition, broadening of the coexistence region of the insulator and metal phases, and an increase in the critical temperature at which the coexistence region disappears.