The three-band model relevant to high-temperature copper-oxide superconductors is solved using single-site dynamical mean field theory and a tight-binding parametrization of the copper and oxygen bands. For a band filling of one hole per unit cell the metal/charge-transfer-insulator phase diagram is determined. The electron spectral function, optical conductivity, and quasiparticle mass enhancement are computed as functions of electron and hole doping for parameters such that at one hole per cell the paramagnetic phase is insulating and for parameters such that at one hole per unit cell the paramagnetic phase is metallic. The optical conductivity is computed using the Peierls phase approximation for the optical matrix elements. The calculation includes the physics of ``Zhang-Rice singlets.'' The effects of antiferromagnetism on the magnitude of the gap and the relation between correlation strength and doping-induced changes in state density are determined. Three-band and one-band models are compared. The two models are found to yield quantitatively consistent results for all energies less than about 4 eV including energies in the vicinity of the charge-transfer gap. Parameters on the insulating side of the metal/charge-transfer insulator phase boundary lead to gaps which are too large and near-gap conductivities which are too small relative to data. The results place the cuprates clearly in the intermediate correlation regime, on the paramagnetic metal side of the metal/charge-transfer insulator phase boundary.The three-band model relevant to high-temperature copper-oxide superconductors is solved using single-site dynamical mean field theory and a tight-binding parametrization of the copper and oxygen bands. For a band filling of one hole per unit cell the metal/charge-transfer-insulator phase diagram is determined. The electron spectral function, optical conductivity, and quasiparticle mass enhancement are computed as functions of electron and hole doping for parameters such that at one hole per cell the paramagnetic phase is insulating and for parameters such that at one hole per unit cell the paramagnetic phase is metallic. The optical conductivity is computed using the Peierls phase approximation for the optical matrix elements. The calculation includes the physics of ``Zhang-Rice singlets.'' The effects of antiferromagnetism on the magnitude of the gap and the relation between correlation strength and doping-induced changes in state density are determined. Three-band and one-band models are compared. The two models are found to yield quantitatively consistent results for all energies less than about 4 eV including energies in the vicinity of the charge-transfer gap. Parameters on the insulating side of the metal/charge-transfer insulator phase boundary lead to gaps which are too large and near-gap conductivities which are too small relative to data. The results place the cuprates clearly in the intermediate correlation regime, on the paramagnetic metal side of the metal/charge-transfer insulator phase boundary.

arXiv:0804.2250Physical Review BAug 4, 200958 citations

Theory of the Optical Conductivity of Spin Liquid States in One-Dimensional Mott Insulators

Hosho Katsura, Masahiro Sato, Takashi Furuta +1 more

The low-energy dynamical optical response of dimerized and undimerized spin liquid states in a one-dimensional charge transfer Mott insulator is theoretically studied. An exact analysis is given for the low-energy asymptotic behavior using conformal field theory for the undimerized state. In the dimerized state, the infrared absorption due to the bound state of two solitons, i.e., the breather mode, is predicted with an accurate estimate for its oscillator strength, offering a way to detect experimentally the excited singlet state. The effects of external magnetic fields are also discussed.The low-energy dynamical optical response of dimerized and undimerized spin liquid states in a one-dimensional charge transfer Mott insulator is theoretically studied. An exact analysis is given for the low-energy asymptotic behavior using conformal field theory for the undimerized state. In the dimerized state, the infrared absorption due to the bound state of two solitons, i.e., the breather mode, is predicted with an accurate estimate for its oscillator strength, offering a way to detect experimentally the excited singlet state. The effects of external magnetic fields are also discussed.

arXiv:0907.1135Physical Review LettersOct 23, 200932 citations

Nonlinear Energy Transfer in Semiconductors Yielding Optical Bistability

Klaus M. Bohnert

NATO ASI series. Series B : PhysicsJan 1, 19840 citations

Modification of resonant energy transfer processes by optical confinement

Luis González-Urbina, Branko Kolarić, Koen Clays

Jun 15, 20110 citations

Light absorption spectrum of two-dimensional Mott insulators

Hisashi Itoh, Akira Takahashi, Masaki Aihara

We theoretically investigate the light absorption spectrum of two-dimensional (2D) Mott insulators. We employ the numerical diagonalization method to calculate the light absorption spectrum with using the effective Hamiltonian for the extended Hubbard model, which is valid when the on-site Coulomb interaction energy $U$ is much larger than the nearest-neighbor transfer integral $t$ and the nearest-neighbor Coulomb interaction energy $V$ . For $V=0$ , the absorption spectrum consists of a broad band with a width of about $16t$ and a sharp central peak, and the energy eigenstates contributing to the absorption spectrum do not have the antiferromagnetic (AF) spin order, when $U$ is sufficiently larger than $t$ . These features result from the spin-charge interplay inherent in the very strong correlation region where charge transfer term is dominant. With decreasing $U∕t$ , the peak structure in absorption spectrum becomes unclear and some low energy eigenstates have the AF spin order, as a result of the spin-spin interaction term. For large $V∕t$ , the dominant peak arises in the lower energy region of the spectrum. A large number of holon-doublon bound states, which have nearly the same charge but different spin structures, are responsible for this peak, in contrast to the conventional exciton state. This is also in contrast to the charge bound states in one-dimensional (1D) Mott insulators, where a single energy eigenstate dominates the optical transition moment as a result of the spin-charge separation. The essentially different absorption spectra between the 1D and 2D Mott insulators originate from the difference in the coupling between spin and charge degrees of freedom.We theoretically investigate the light absorption spectrum of two-dimensional (2D) Mott insulators. We employ the numerical diagonalization method to calculate the light absorption spectrum with using the effective Hamiltonian for the extended Hubbard model, which is valid when the on-site Coulomb interaction energy $U$ is much larger than the nearest-neighbor transfer integral $t$ and the nearest-neighbor Coulomb interaction energy $V$. For $V=0$, the absorption spectrum consists of a broad band with a width of about $16t$ and a sharp central peak, and the energy eigenstates contributing to the absorption spectrum do not have the antiferromagnetic (AF) spin order, when $U$ is sufficiently larger than $t$. These features result from the spin-charge interplay inherent in the very strong correlation region where charge transfer term is dominant. With decreasing $U∕t$, the peak structure in absorption spectrum becomes unclear and some low energy eigenstates have the AF spin order, as a result of the spin-spin interaction term. For large $V∕t$, the dominant peak arises in the lower energy region of the spectrum. A large number of holon-doublon bound states, which have nearly the same charge but different spin structures, are responsible for this peak, in contrast to the conventional exciton state. This is also in contrast to the charge bound states in one-dimensional (1D) Mott insulators, where a single energy eigenstate dominates the optical transition moment as a result of the spin-charge separation. The essentially different absorption spectra between the 1D and 2D Mott insulators originate from the difference in the coupling between spin and charge degrees of freedom.

Physical Review BFeb 16, 200618 citations

U

is much larger than the nearest-neighbor transfer integral

t

and the nearest-neighbor Coulomb interaction energy

V

. For

V=0

, the absorption spectrum consists of a broad band with a width of about

16t

and a sharp central peak, and the energy eigenstates contributing to the absorption spectrum do not have the antiferromagnetic (AF) spin order, when

U

is sufficiently larger than

t

. These features result from the spin-charge interplay inherent in the very strong correlation region where charge transfer term is dominant. With decreasing

U∕t

, the peak structure in absorption spectrum becomes unclear and some low energy eigenstates have the AF spin order, as a result of the spin-spin interaction term. For large

V∕t

, the dominant peak arises in the lower energy region of the spectrum. A large number of holon-doublon bound states, which have nearly the same charge but different spin structures, are responsible for this peak, in contrast to the conventional exciton state. This is also in contrast to the charge bound states in one-dimensional (1D) Mott insulators, where a single energy eigenstate dominates the optical transition moment as a result of the spin-charge separation. The essentially different absorption spectra between the 1D and 2D Mott insulators originate from the difference in the coupling between spin and charge degrees of freedom.