The DOS, the dynamic (optical) conductivity, and the phase diagram of a strongly correlated and strongly disordered paramagnetic Anderson-Hubbard model are analyzed within the generalized dynamical mean field theory (DMFT + Σ approximation). Strong correlations are taken into account by the DMFT, and disorder is taken into account via an appropriate generalization of the self-consistent theory of localization. The DMFT effective single-impurity problem is solved by a numerical renormalization group (NRG); we consider the three-dimensional system with a semielliptic DOS. The correlated metal, Mott insulator, and correlated Anderson insulator phases are identified via the evolution of the DOS and dynamic conductivity, demonstrating both the Mott-Hubbard and Anderson metal-insulator transition and allowing the construction of the complete zero-temperature phase diagram of the Anderson-Hubbard model. Rather unusual is the possibility of a disorder-induced Mott insulator-to-metal transition.The DOS, the dynamic (optical) conductivity, and the phase diagram of a strongly correlated and strongly disordered paramagnetic Anderson-Hubbard model are analyzed within the generalized dynamical mean field theory (DMFT + Σ approximation). Strong correlations are taken into account by the DMFT, and disorder is taken into account via an appropriate generalization of the self-consistent theory of localization. The DMFT effective single-impurity problem is solved by a numerical renormalization group (NRG); we consider the three-dimensional system with a semielliptic DOS. The correlated metal, Mott insulator, and correlated Anderson insulator phases are identified via the evolution of the DOS and dynamic conductivity, demonstrating both the Mott-Hubbard and Anderson metal-insulator transition and allowing the construction of the complete zero-temperature phase diagram of the Anderson-Hubbard model. Rather unusual is the possibility of a disorder-induced Mott insulator-to-metal transition.

arXiv:0706.2618Journal of Experimental and Theoretical PhysicsMar 1, 200824 citations

Dielectric Breakdown of Mott Insulators in Dynamical Mean-Field Theory

Martin Eckstein, Takashi Oka, Philipp Werner

Using nonequilibrium dynamical mean-field theory, we compute the time evolution of the current in a Mott insulator after a strong electric field is turned on. We observe the formation of a quasistationary state in which the current is almost time independent although the system is constantly excited. At moderately strong fields this state is stable for quite long times. The stationary current exhibits a threshold behavior as a function of the field, in which the threshold increases with the Coulomb interaction and vanishes as the metal-insulator transition is approached.Using nonequilibrium dynamical mean-field theory, we compute the time evolution of the current in a Mott insulator after a strong electric field is turned on. We observe the formation of a quasistationary state in which the current is almost time independent although the system is constantly excited. At moderately strong fields this state is stable for quite long times. The stationary current exhibits a threshold behavior as a function of the field, in which the threshold increases with the Coulomb interaction and vanishes as the metal-insulator transition is approached.

arXiv:1006.3516Physical Review LettersSep 28, 2010136 citations

Mott–Hubbard and Anderson transitions in dynamical mean-field theory

Krzysztof Byczuk, Walter Hofstetter, D. Vollhardt

arXiv:cond-mat/0502257Physica B Condensed MatterFeb 18, 20053 citations

Nonequilibrium gap collapse near a first-order Mott transition

Matteo Sandri, Michele Fabrizio

We study the nonequilibrium dynamics of a simple model for ${\mathrm{V}}_{2}{\mathrm{O}}_{3}$ that consists of a quarter-filled Hubbard model for two orbitals that are split by a weak crystal field. Peculiarities of this model are (1) a Mott insulator whose gap corresponds to transferring an electron from the occupied lower orbital to the empty upper one, rather than from the lower to the upper Hubbard subbands; (2) a Mott transition generically of first order even at zero temperature. We simulate by means of time-dependent Gutzwiller approximation the evolution within the insulating phase of an initial state endowed by a nonequilibrium population of electrons in the upper orbital and holes in the lower one. We find that the excess population may lead, above a threshold, to a gap collapse and drive the insulator into the metastable metallic phase within the coexistence region around the Mott transition. This result foresees a nonthermal pathway to revert a Mott insulator into a metal. Even though this physical scenario is uncovered in a very specific toy model, we argue it might apply to other Mott insulating materials that share similar features.We study the nonequilibrium dynamics of a simple model for ${\mathrm{V}}_{2}{\mathrm{O}}_{3}$ that consists of a quarter-filled Hubbard model for two orbitals that are split by a weak crystal field. Peculiarities of this model are (1) a Mott insulator whose gap corresponds to transferring an electron from the occupied lower orbital to the empty upper one, rather than from the lower to the upper Hubbard subbands; (2) a Mott transition generically of first order even at zero temperature. We simulate by means of time-dependent Gutzwiller approximation the evolution within the insulating phase of an initial state endowed by a nonequilibrium population of electrons in the upper orbital and holes in the lower one. We find that the excess population may lead, above a threshold, to a gap collapse and drive the insulator into the metastable metallic phase within the coexistence region around the Mott transition. This result foresees a nonthermal pathway to revert a Mott insulator into a metal. Even though this physical scenario is uncovered in a very specific toy model, we argue it might apply to other Mott insulating materials that share similar features.

arXiv:1410.4442Physical Review BMar 2, 201527 citations

“Linearized” dynamical mean-field theory for the Mott-Hubbard transition

R. Bulla, M. Potthoff

arXiv:cond-mat/9905075The European Physical Journal BJan 1, 200065 citations

We study the nonequilibrium dynamics of a simple model for

{\mathrm{V}}_{2}{\mathrm{O}}_{3}

that consists of a quarter-filled Hubbard model for two orbitals that are split by a weak crystal field. Peculiarities of this model are (1) a Mott insulator whose gap corresponds to transferring an electron from the occupied lower orbital to the empty upper one, rather than from the lower to the upper Hubbard subbands; (2) a Mott transition generically of first order even at zero temperature. We simulate by means of time-dependent Gutzwiller approximation the evolution within the insulating phase of an initial state endowed by a nonequilibrium population of electrons in the upper orbital and holes in the lower one. We find that the excess population may lead, above a threshold, to a gap collapse and drive the insulator into the metastable metallic phase within the coexistence region around the Mott transition. This result foresees a nonthermal pathway to revert a Mott insulator into a metal. Even though this physical scenario is uncovered in a very specific toy model, we argue it might apply to other Mott insulating materials that share similar features.