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Bulletin of the American Physical Society

Study of the possibility of extracting single-atom photo-recombination cross sections from macroscopic high harmonic spectra generated by lasers.

Cheng Jin, Anh-Thu Le, C. D. Lin

Published May 23, 2009• 0 citations
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Using exact analytical expressions of the nonrelativistic dipole recombination cross sections for a pure Coulomb potential summed over the quantum numbers j and l, we numerically compute the recombination cross sections in the various n states for 1\ensuremath{\le}n\ensuremath{\le}500 and the total cross section for all possible values of the incoming electron energy. We present a parametrization of the recombination cross sections in the various n states, of the total cross section, and of the energy emission cross section. A few low- and high-energy approximations are also derived and discussed.
To increase the efficiency of laser-induced recombination of antihydrogen from cold antihydrogen—positron plasma in a trap, it is proposed to use a new resonance mechanism with the participation of positron quasi-stationary states, arising under the joint action of an antiproton Coulomb field and a strong magnetic field of the trap. The recombination rate is expressed through the atomic laser ionization cross section whose frequency dependence is nonmonotonic due to the presence of quasi-stationary states against the background of the continuum. The estimates with the use of the ionization cross sections calculated earlier demonstrate the possibility of improving the efficiency of the laser-induced recombination at an optimally selected laser frequency.
Abstract The silicon vacancy (SiV) center in diamond is drawing much attention due to its optical and spin properties, attractive for quantum information processing and sensing. Comparatively little is known, however, about the dynamics governing SiV charge state interconversion mainly due to challenges associated with generating, stabilizing, and characterizing all possible charge states, particularly at room temperature. Here, multi‐color confocal microscopy and density functional theory are used to examine photo‐induced SiV recombination — from neutral, to single‐, to double‐negatively charged — over a broad spectral window in chemical‐vapor‐deposition (CVD) diamond under ambient conditions. For the SiV0 to SiV‐ transition, a linear growth of the photo‐recombination rate with laser power at all observed wavelengths is found, a hallmark of single photon dynamics. Laser excitation of SiV‒, on the other hand, yields only fractional recombination into SiV2‒, a finding that is interpreted in terms of a photo‐activated electron tunneling process from proximal nitrogen atoms.