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Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)

High-speed Optical Packet Switching Using Holeburning Materials At Wavelengths Up To 1.55 μm

Xiao A. Shen, Y. Zhang, Ravinder Kachru

Published Aug 24, 2005• 0 citations
Publisher
DOI
10.1109/cleopr.1997.610939

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High bandwidth optical packet switching using holeburning materials at wavelengths up to 1.55 μm

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Packet switching has emerged as a promising networking technique capable of supporting a wide range of communications services, such as voice, video, image and data.1,2 However, implementation of this technique at optical carrier frequencies, especially at the communication wavelengths, to fully utilize the wide transmission bandwidth offered by fiber optic technologies remains a challenge. Impediments to the development includes: i) the inability to rapidly analyze temporal optical information contained in the header of each packet for efficient routing, ii) rapid data processing and buffering at the communication wavelengths. Most optical switches proposed earlier suffer from either insufficient memory capacity for storing reference information, slow processing speed for routing at required packet rates, or the requirement of wavelength conversions.

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Abstract : Optical materials for spectral hole burning and coherent transient applications were designed and evaluated, emphasizing relevance to devices including high performance memory, signal processing, high speed holographic recording and analysis, and optical switches, routers, and buffers. The ultimate limits on material performance set by atomic mechanisms were determined. The developed materials contained Eu3+, Pr3+, Tm3+, Tb3+, or Er3+ active ions in various oxide hosts. The first report was made of an Er3+ material for hole burning applications in 1.5 micron optical communications bands. Eight Er3+ materials for applications at 1.5 microns in optical routers and buffer memories were designed and characterized. A correlator' signal processing capability was demonstrated, and the first report was made of operation of a 1.5 micron packet header decoder for all-optimized optical packet switching in optical communications along optical fibers at 1531 nm. Eu3+:Y2SiO5 was optimized for use in 100 GByte ODRAM optical memory devices, considering Eu3+ concentration and temperature. Eight Tm3+ compounds for signal processing applications, such as true time delays for phased-array radar, at diode laser wavelengths near 795 nm were designed and characterized. Eight Tb3+ compounds for photon gated spectral hole burning were designed and characterized, and gated hole burning was observed in Tb3+:YAIO3.

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Optical bistability from a thermodynamic phase transition in vanadium dioxide

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We demonstrate cw optical bistability at 1.06 μm using the large thermo-optical nonlinearity from the metal-semiconductor phase transition in a thin-film interference filter of vanadium dioxide. Highly stable and reproducible operation has been obtained. By biasing at the transition point, an all-optical external switching between the semiconducting and the metallic states has been demonstrated, with a contrast ratio of 15:1. The effective nonlinear index coefficient is n2 ≈ 1.6 cm2/W with a switching energy density of 135 pJ/μm2 and a speed of 15 ms. The tunability of the material properties of vanadium dioxide provides a means to make devices with a wide range of switching powers and speeds.

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All-Optical Switching in High Figure-of-Merit Materials

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Progress in optical science and photonics•Jan 1, 2025•1 citation
Packet switching has emerged as a promising networking technique capable of supporting a wide range of communications services, such as voice, video, image and data.1,2 However, implementation of this technique at optical carrier frequencies, especially at the communication wavelengths, to fully utilize the wide transmission bandwidth offered by fiber optic technologies remains a challenge. Impediments to the development includes: i) the inability to rapidly analyze temporal optical information contained in the header of each packet for efficient routing, ii) rapid data processing and buffering at the communication wavelengths. Most optical switches proposed earlier suffer from either insufficient memory capacity for storing reference information, slow processing speed for routing at required packet rates, or the requirement of wavelength conversions.
Abstract : Optical materials for spectral hole burning and coherent transient applications were designed and evaluated, emphasizing relevance to devices including high performance memory, signal processing, high speed holographic recording and analysis, and optical switches, routers, and buffers. The ultimate limits on material performance set by atomic mechanisms were determined. The developed materials contained Eu3+, Pr3+, Tm3+, Tb3+, or Er3+ active ions in various oxide hosts. The first report was made of an Er3+ material for hole burning applications in 1.5 micron optical communications bands. Eight Er3+ materials for applications at 1.5 microns in optical routers and buffer memories were designed and characterized. A correlator' signal processing capability was demonstrated, and the first report was made of operation of a 1.5 micron packet header decoder for all-optimized optical packet switching in optical communications along optical fibers at 1531 nm. Eu3+:Y2SiO5 was optimized for use in 100 GByte ODRAM optical memory devices, considering Eu3+ concentration and temperature. Eight Tm3+ compounds for signal processing applications, such as true time delays for phased-array radar, at diode laser wavelengths near 795 nm were designed and characterized. Eight Tb3+ compounds for photon gated spectral hole burning were designed and characterized, and gated hole burning was observed in Tb3+:YAIO3.
We demonstrate cw optical bistability at 1.06 μm using the large thermo-optical nonlinearity from the metal-semiconductor phase transition in a thin-film interference filter of vanadium dioxide. Highly stable and reproducible operation has been obtained. By biasing at the transition point, an all-optical external switching between the semiconducting and the metallic states has been demonstrated, with a contrast ratio of 15:1. The effective nonlinear index coefficient is n2 ≈ 1.6 cm2/W with a switching energy density of 135 pJ/μm2 and a speed of 15 ms. The tunability of the material properties of vanadium dioxide provides a means to make devices with a wide range of switching powers and speeds.