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Nonlinear Optics

Generation of bistable luminescence radiation by thin CdS films: experiment and theory

B. Ullrich, T. Kobayshi

Published Dec 17, 2002• 0 citations
Publisher

Abstract

Summary form only given. In conclusion, the first theoretical interpretation for all-optical bistability in luminescence is presented. This is also the first report of refractive bistability in luminescence. Finally, a novel method is proposed to study the free carrier type of semiconductors by the application of bistability in luminescence.>

DOI
10.1109/nlo.1994.470807

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All-optical bistability in luminescence of thin CdS films

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Besides the well-known phenomenon of bistability in transmission, the excitation of thin ( 5.5 µm) CdS films by the 514.5 nm A r +-laser line generates all-optical bistability in luminescence in the near-infrared region of the spectrum. With the application of this feature, the determination of the type of impurities, donors or acceptors in GaAs is possible. The novel method proposed here underlies the principle that differently contrasting bistable loops in luminescence are clearly observed if n-type, intrinsic or p-type GaAs wafers are used as cut-off filters for the bistable luminescent emission of thin CdS films.

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Resonatorless optical bistability in a thin semiconductor film

S L Gaivan, P. I. Khadzhi

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Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•Jul 2, 1998•0 citations
Summary form only given. In conclusion, the first theoretical interpretation for all-optical bistability in luminescence is presented. This is also the first report of refractive bistability in luminescence. Finally, a novel method is proposed to study the free carrier type of semiconductors by the application of bistability in luminescence.>
Recently, we have discovered that the excitation of thin CdS films with the 514.5 nm line causes an all-optical bistable luminescent emission in the near infrared part of the spectrum. A first insight in mechanism and origin of all-optical bistability in luminescence of semiconductors is presented. We show that the initial and final states of the bistable luminescence are determined by the thermal properties of the luminescence intensity of the thin CdS film. However, during the bistable switch of the luminescence thermal effects and electronic ones take place. Thus, all-optical bistability in luminescence is a thermally induced electronic bistability.
Besides the well-known phenomenon of bistability in transmission, the excitation of thin ( 5.5 µm) CdS films by the 514.5 nm A r +-laser line generates all-optical bistability in luminescence in the near-infrared region of the spectrum. With the application of this feature, the determination of the type of impurities, donors or acceptors in GaAs is possible. The novel method proposed here underlies the principle that differently contrasting bistable loops in luminescence are clearly observed if n-type, intrinsic or p-type GaAs wafers are used as cut-off filters for the bistable luminescent emission of thin CdS films.
All-optical bistability in luminescence of thin (⩽ 10 μm) CdS and CdS: Cu sprayed films on pyrex® was studied in the range of 700-1000 nm. The films were investigated between 80-210 K and excited by the 514.5 nm Ar + - laser line. The measurements were performed in transmission or reflection geometries using a monochromator or cut-off filters, respectively. The pronounced dependence of the luminescence intensity on temperature in the near infrared is found to be the origin of bistability in luminescence. Furthermore, we demonstrate that the loop contrasts depend on the wavelength investigated. By the application of this feature, we present, to the best of our knowledge for the first time, a possibility to measure doping concentrations of a semiconductor with a bistable device. Finally, new concepts are discussed to use luminescence bistability in all-optical or hybrid data links.
All-optical photo-thermal bistabilities in the near infrared luminescence (800 nm) of a thin ( 5.5 µm) spray-pyrolyzed CdS film are studied with the 514.5 nm line of an argon laser. We report the first observation of both dispersive and absorptive luminescence bistabilities in the same CdS film. The temperature dependence of the luminescence intensity and self-focusing are found to be the origins of absorptive and dispersive luminescence bistabilities, respectively. Furthermore, it is demonstrated that the shape of the bistable response of the luminescence depends crucially on the entrance slit width of the monochromator.