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Bulletin of the American Physical Society

Electronic Griffiths phase near a disordered Mott transition in $D=2$

Eric C. Andrade, E. Miranda, V. Dobrosavljević

Published Mar 13, 2008• 0 citations
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Electronic Griffiths phase near a disordered Mott transition in D=2D=2D=2
The effects of disorder are investigated in strongly correlated electronic systems near the Mott metal-insulator transition. Correlation effects are found1 to lead to strong disorder screening, a mechanism restricted to low-lying electronic states, very similar to what is observed in underdoped cuprates. These results suggest, however, that this effect is not specific to disordered d-wave superconductors, but is a generic feature of all disordered Mott systems. In addition, the resulting spatial inhomogeneity rapidly increases2 as the Mott insulator is approached at fixed disorder strength. This behavior, which can be described as an Electronic Griffiths Phase, displays all the features expected for disorder-dominated Infinite-Randomness Fixed Point scenario of quantum criticality.
We present a large N solution of a microscopic model describing the Mott-Anderson transition on a finite-coordination Bethe lattice. Our results demonstrate that strong spatial fluctuations, due to Anderson localization effects, dramatically modify the quantum critical behavior near disordered Mott transitions. The leading critical behavior of quasiparticle wave functions is shown to assume a universal form in the full range from weak to strong disorder, in contrast to disorder-driven non-Fermi liquid ("electronic Griffiths phase") behavior, which is found only in the strongly correlated regime.