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New Journal of Physics

Resonant phase escape in Bi2Sr2CaCu2O8+δsurface intrinsic Josephson junctions

Haifeng Yu, Xiaobo Zhu, Jian-kun Ren, Zhihui Peng, D. J. Cui, Hui Deng, W H Cao, Ye Tian, G H Chen, Dongning Zheng, X.N. Jing, Li Lü, S. P. Zhao

Published Sep 16, 2013• 5 citations
Publisher

Abstract

We present a study of phase escape in surface Bi 2 Sr 2 CaCu 2 O 8+ δ intrinsic Josephson junctions in the presence of microwave radiation. The measured switching current distributions display clear double-peak structures in the microwave field, which result from the single- and two-photon resonant escape processes accompanied by microwave-induced potential barrier suppression. We show that these results can be well explained by a quantum-mechanical model proposed by Fistul et al (2003 Phys. Rev. B 68 060504), from which the power and frequency dependences of the switching current distributions can be reproduced.

DOI
10.1088/1367-2630/15/9/095006

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We present a study of phase escape in surface Bi 2 Sr 2 CaCu 2 O 8+ δ intrinsic Josephson junctions in the presence of microwave radiation. The measured switching current distributions display clear double-peak structures in the microwave field, which result from the single- and two-photon resonant escape processes accompanied by microwave-induced potential barrier suppression. We show that these results can be well explained by a quantum-mechanical model proposed by Fistul et al (2003 Phys. Rev. B 68 060504), from which the power and frequency dependences of the switching current distributions can be reproduced.
We study the microwave-induced phase switches from the finite voltage state for the underdamped intrinsic Josephson junctions (IJJs) made of Bi 2 Sr 2 CaCu 2 O y (Bi2212). We observe the resonant double-peak structure in the switching current distribution at low temperatures. This feature is successfully explained by a quantum mechanical model where the strong microwave field effectively suppresses the potential barrier for the phase escape from a potential well and the macroscopic quantum tunneling (MQT) is resonantly enhanced. The detailed analyses considering the effects of multiple phase retrapping processes after the phase escape strongly suggest that the intense microwave field suppresses the energy-level spacing in the potential well, by effectively decreasing the fluctuation-free critical current and the Josephson plasma frequency. This effect also reduces the number of photons required for the multiphoton transition between the ground and the first excited states, making it possible to observe the energy level quantization in the MQT state. The temperature dependence of the resonance peak emerging in the switching rate clearly demonstrates that the quantized energy state can be survived up to ~10 K, which is much higher than a crossover temperature predicted by the conventional Caldeira-Leggett theory.
We report a study of the phase escape in Bi2Sr2CaCu2Oy intrinsic Josephson junctions under the strong microwave irradiation, focusing on the switch from the first resistive state (2nd SW). The resonant double-peak structure is clearly observed in the switching current distributions below 10 K and is successfully explained by a quantum-mechanical model on the quantum phase escape under the strong microwave field. These results provide the first evidence for the formation of the energy level quantization for the 2nd SW, supporting that the macroscopic quantum tunneling for the 2nd SW survives up to ∼10 K.
A quantum-mechanical analysis of the Josephson phase escape in the presence of both dc and ac bias currents is presented. We find that the potential barrier for the escape of the phase is effectively suppressed as the resonant condition occurs, i.e., when the frequency $\ensuremath{\omega}$ of the ac bias matches the Josephson-junction energy-level separation. This effect manifests itself by a pronounced drop in the dependence of the switching current Is{I}_{s}Is​ on the power W of the applied microwave radiation and by a peculiar double-peak structure in the switching current distribution P(Is).{P(I}_{s}).P(Is​). The developed theory is in a good accord with an experiment which we also report in this paper. The obtained features can be used to characterize certain aspects of the quantum-mechanical behavior of the Josephson phase, such as the energy level quantization, the Rabi frequency of coherent oscillations, and the effect of damping.
The microwave-driven dynamics of the superconducting phase difference across a Josephson junction is now widely employed in superconducting qubits and quantum circuits. With the typical energy level separation frequency of several GHz, cooling these quantum devices to the ground state requires temperatures below 100 mK. Pushing the operation frequency of superconducting qubits up may allow for operation of superconducting qubits at 1 K and even higher temperatures. Here we present measurements of the switching currents of niobium/aluminum-aluminum oxide/niobium Josephson junctions in the presence of millimeter-wave radiation at frequencies above 100 GHz. The observed switching current distributions display clear double-peak structures, which result from the resonant escape of the Josephson phase from a stationary state. We show that the data can be well explained by the strong-driving model including the irradiation-induced suppression of the potential barrier. While still being measured in the quasi-classical regime, our results point towards a feasibility of operating phase qubits around 100 GHz.
The microwave-driven dynamics of the superconducting phase difference across a Josephson junction is now widely employed in superconducting qubits and quantum circuits. With their typical energy level separation frequency being several GHz, cooling these quantum devices to the ground state requires temperatures below 100 mK. Pushing the operation frequency of superconducting qubits up may allow for operation of superconducting qubits at 1 K and even higher temperatures. Here, we present measurements of the switching currents of niobium/aluminum–aluminum oxide/niobium Josephson junctions in the presence of millimeter-wave radiation at frequencies above 100 GHz. The observed switching current distributions display clear double-peak structures, which result from the resonant escape of the Josephson phase from a stationary state. We show that the data can be well explained by the strong-driving model including the irradiation-induced suppression of the potential barrier. While still being measured in the quasi-classical regime, our results point toward a feasibility of operating phase qubits around 100 GHz.
We perform both theoretical and experimental investigations on the phase escape of a current-biased Josephson tunnel junction under microwave irradiation. The switching current distributions exhibit abundant nonlinear behaviors depending on the power and frequency of the applied microwave. We present a model to describe the behavior of the primary peak in the switching current distribution, which is confirmed by our experimental results. The obtained features can be used to characterize the damping parameter of Josephson junctions.