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The Interaction of Potassium(nd) Rydberg Atoms with AN Amorphous Gold Surface.

D. F. Gray

Published Jan 1, 1988• 0 citations
OpenAlex

Abstract

This thesis reports the first controlled study of the interactions of Rydberg atoms with a metal surface. In these experiments, a collimated beam of potassium Rydberg atoms is directed at a plane surface at near grazing incidence. Positive ions formed by surface ionization are attracted to the surface by their image charge, which is counterbalanced by an external electric field applied perpendicular to the surface. The ions are detected by a position-sensitive detector (PSD). At some critical value of the external field, the ion trajectories just miss the surface, suggesting that analysis of the dependence of the ion signals on external electric field can be used to determine the distance from the surface at which ionization occurs. This distance, and thus the corresponding critical electric field, is expected to be n-dependent. Experimentally, however, it was observed that the ion signal had a sudden n-independent onset when only a small positive perpendicular electric field was applied at the surface. This observation requires, surprisingly, that the ions produced by surface ionization can readily escape from the surface. The data do, however, show that Rydberg atoms are efficiently ionized in collisions with the surface. This process may provide a useful new detection technique for Rydberg atoms.

Related papers

Interaction of Rydberg atoms with a metal surface in the presence of an external electric field

Peter J. Nordlander, F. B. Dunning

The behavior of Rydberg atoms near metal surfaces in the presence of an external electric field has been examined theoretically to evaluate their potential use as an experimental probe of electron tunneling processes at surfaces. These ab initio calculations reveal strong hybridization that leads to a shift and broadening of the Rydberg levels that depend sensitively on the atom-surface separation and the strength of the applied electric field. A range of external fields exists, however, for which the Rydberg atoms ionize at sufficiently large atom-surface separations that, even in the presence of image charge attraction, the resulting positive ions can escape the surface and provide an experimentally observable signal. \textcopyright{} 1996 The American Physical Society.

Physical review. B, Condensed matter•Mar 15, 1996•32 citations

Ionization of K(nd) Rydberg-state atoms at a surface

D. F. Gray, Z. Zheng, K. A. Smith +1 more

The ion production that results when K(nd) Rydberg atoms are incident at grazing incidence on a metal surface is investigated. The data show that such ion production forms the basis of a simple technique with which to detect Rydberg atoms, even at relatively low values of n, and suggest that Rydberg atoms may provide a novel means to investigate local electric fields present near a surface.

Physical Review A•Aug 1, 1988•42 citations

Interaction of Rydberg atoms with a metal surface in the presence of an external electric field

Peter J. Nordlander, F. B. Dunning

The behavior of Rydberg atoms near metal surfaces in the presence of an external electric field has been examined theoretically to evaluate their potential use as an experimental probe of electron tunneling processes at surfaces. These ab initio calculations reveal strong hybridization that leads to a shift and broadening of the Rydberg levels that depend sensitively on the atom-surface separation and the strength of the applied electric field. A range of external fields exists, however, for which the Rydberg atoms ionize at sufficiently large atom-surface separations that, even in the presence of image charge attraction, the resulting positive ions can escape the surface and provide an experimentally observable signal. \textcopyright{} 1996 The American Physical Society.

APS•Mar 1, 1997•0 citations

Interaction of Xenon Rydberg Atoms with Conductive Surfaces: The Effects of Stray Fields

Dennis Neufeld

The ionization of xenon Rydberg atoms at metallic surfaces is examined. The data show that, when the effects of stray electric "patch" fields present on the surface are taken into account, ionization is well described by a simple over-the-barrier model. The patch fields are determined from direct measurements of the potential variations across the target surfaces using Kelvin probe force microscopy. Monte Carlo techniques are used to model the atom-surface interaction. The results confirm the important role that patch fields can play during Rydberg atom-surface interactions and suggest that such interactions can provide a sensitive probe of stray fields at surfaces. To demonstrate this, measurements of the threshold conditions required to observe ions resulting from surface ionization are used to estimate how large such stray fields can be. The data show that the stray fields can be sizable, as large as ∼ 10 3 V · cm -1 100 nm from the surface and ∼ 10 V · cm -1 500 nm from the surface, and illustrate the potential of Rydberg atoms for detecting and characterizing surface electric fields. Methods to enhance the surface ionization signal using electrode arrays patterned on a surface are investigated. Simulations show that bias voltages applied to a series of parallel wires comprised of two interleaved comb-shaped electrodes can have a dramatic impact on ion collection efficiency. It is suggested that such a surface can be used to efficiently collect low- n Rydberg atoms ( n [Special characters omitted.] 10). Significant progress towards fabrication of a functioning surface of 1 μm wide wires with 1 μm spacing is documented.

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Charge transfer of Rydberg hydrogen molecules and atoms at doped silicon surfaces

Sashikesh Ganeshalingam

The work of this thesis focuses on the interaction of high Rydberg states of hydrogen molecules and atoms with various doped Si semiconductor surfaces with the results compared with those obtained with an atomically flat gold surface. The major part of the thesis was carried out using para-H₂ molecular Rydberg states with principal quantum number n = 17 - 21 and core rotational quantum number N⁺ = 2. Subsequently, this study was continued using H atomic Rydberg states with principal quantum number n = 29 - 34. The high Rydberg states have been produced using two-step laser excitation. For close Rydberg surface separation (< 6 n² a.u.), the Rydberg states may be ionized due to an attractive surface potential experienced by the Rydberg electron, and the remaining ion core may be detected by applying an external electric field.An efficient ion detectability method is introduced to compare the many surface ionization profiles quantitatively. The p-type doped Si surfaces enhance the detected ion-signal more than the n-type doped Si surfaces due to the presence of widely distributed positive dopant charge fields in the p-type doped Si surfaces. As the dopant density increases, the area sampled by the resultant ions becomes effectively more neutral, and the decay rate of the potential from the surface dopant charge with distance from the surface becomes more rapid. Therefore, the minimum ionization distance is also reduced with increasing dopant density. It is found that the detected ion-signal decreases with increasing dopant density of both p- and n- type doped Si surfaces. The higher-n Rydberg states have shown higher ion detectability than that of lower-n Rydberg states and this variation also becomes smaller when increasing the dopant density.Experiments involving H2 Rydberg molecules incident on various doped Si surfaces in the presence of a Stark field at the point of excitation are also presented here. The surface ionization profiles produced via both electron and ion detection schemes are measured by changing the Stark polarization. Positive surface dopant charges oppose production of backscattered electrons and negative surface dopant charges enhance the electron-signal. For the electron detection scheme, lightly doped n-type Si surfaces show higher detectability but in the case of p-type Si surfaces the more heavily doped Si surfaces give a higher detected signal. This different behaviour of the detected ion or electron signal implies a different production mechanism.Theoretical trajectory simulations were also carried out based on a new 2D surface potential model. The results qualitatively agree with the experimental results and explain the changes of the surface ionization profiles between the various dopant types and dopant densities of the Si surfaces.

•Jan 1, 2012•0 citations

Ionization of Rydberg atoms at patterned electrode arrays

Yu Pu, F. B. Dunning

Lithographically patterned micrometer-scale electrode arrays are used to examine the effects of controlled surface electric fields on Rydberg-atom--surface interactions. The data show that application of modest electrode biases (\ensuremath{\sim}\ifmmode\pm\else\textpm\fi{}1 V) can lead to a transition from ionization of the incident atoms by short-range tunneling to field ionization well above the target surface. The resulting ions can be efficiently detected using ion collection fields whose strengths are substantially smaller than those required for direct field ionization pointing to the application of surface ionization in the detection of low-$n$ Rydberg atoms. The data are analyzed with the aid of a Monte Carlo model and further demonstrate the critical role that local surface fields can play in governing the nature of atom-surface interactions.

Physical Review A•Jul 8, 2013•7 citations
This thesis reports the first controlled study of the interactions of Rydberg atoms with a metal surface. In these experiments, a collimated beam of potassium Rydberg atoms is directed at a plane surface at near grazing incidence. Positive ions formed by surface ionization are attracted to the surface by their image charge, which is counterbalanced by an external electric field applied perpendicular to the surface. The ions are detected by a position-sensitive detector (PSD). At some critical value of the external field, the ion trajectories just miss the surface, suggesting that analysis of the dependence of the ion signals on external electric field can be used to determine the distance from the surface at which ionization occurs. This distance, and thus the corresponding critical electric field, is expected to be n-dependent. Experimentally, however, it was observed that the ion signal had a sudden n-independent onset when only a small positive perpendicular electric field was applied at the surface. This observation requires, surprisingly, that the ions produced by surface ionization can readily escape from the surface. The data do, however, show that Rydberg atoms are efficiently ionized in collisions with the surface. This process may provide a useful new detection technique for Rydberg atoms.
The behavior of Rydberg atoms near metal surfaces in the presence of an external electric field has been examined theoretically to evaluate their potential use as an experimental probe of electron tunneling processes at surfaces. These ab initio calculations reveal strong hybridization that leads to a shift and broadening of the Rydberg levels that depend sensitively on the atom-surface separation and the strength of the applied electric field. A range of external fields exists, however, for which the Rydberg atoms ionize at sufficiently large atom-surface separations that, even in the presence of image charge attraction, the resulting positive ions can escape the surface and provide an experimentally observable signal. \textcopyright{} 1996 The American Physical Society.
The behavior of Rydberg atoms near metal surfaces in the presence of an external electric field has been examined theoretically to evaluate their potential use as an experimental probe of electron tunneling processes at surfaces. These ab initio calculations reveal strong hybridization that leads to a shift and broadening of the Rydberg levels that depend sensitively on the atom-surface separation and the strength of the applied electric field. A range of external fields exists, however, for which the Rydberg atoms ionize at sufficiently large atom-surface separations that, even in the presence of image charge attraction, the resulting positive ions can escape the surface and provide an experimentally observable signal. \textcopyright{} 1996 The American Physical Society.
The ionization of xenon Rydberg atoms at metallic surfaces is examined. The data show that, when the effects of stray electric "patch" fields present on the surface are taken into account, ionization is well described by a simple over-the-barrier model. The patch fields are determined from direct measurements of the potential variations across the target surfaces using Kelvin probe force microscopy. Monte Carlo techniques are used to model the atom-surface interaction. The results confirm the important role that patch fields can play during Rydberg atom-surface interactions and suggest that such interactions can provide a sensitive probe of stray fields at surfaces. To demonstrate this, measurements of the threshold conditions required to observe ions resulting from surface ionization are used to estimate how large such stray fields can be. The data show that the stray fields can be sizable, as large as ∼ 10 3 V · cm -1 100 nm from the surface and ∼ 10 V · cm -1 500 nm from the surface, and illustrate the potential of Rydberg atoms for detecting and characterizing surface electric fields. Methods to enhance the surface ionization signal using electrode arrays patterned on a surface are investigated. Simulations show that bias voltages applied to a series of parallel wires comprised of two interleaved comb-shaped electrodes can have a dramatic impact on ion collection efficiency. It is suggested that such a surface can be used to efficiently collect low- n Rydberg atoms ( n [Special characters omitted.] 10). Significant progress towards fabrication of a functioning surface of 1 μm wide wires with 1 μm spacing is documented.
The work of this thesis focuses on the interaction of high Rydberg states of hydrogen molecules and atoms with various doped Si semiconductor surfaces with the results compared with those obtained with an atomically flat gold surface. The major part of the thesis was carried out using para-H₂ molecular Rydberg states with principal quantum number n = 17 - 21 and core rotational quantum number N⁺ = 2. Subsequently, this study was continued using H atomic Rydberg states with principal quantum number n = 29 - 34. The high Rydberg states have been produced using two-step laser excitation. For close Rydberg surface separation (< 6 n² a.u.), the Rydberg states may be ionized due to an attractive surface potential experienced by the Rydberg electron, and the remaining ion core may be detected by applying an external electric field.An efficient ion detectability method is introduced to compare the many surface ionization profiles quantitatively. The p-type doped Si surfaces enhance the detected ion-signal more than the n-type doped Si surfaces due to the presence of widely distributed positive dopant charge fields in the p-type doped Si surfaces. As the dopant density increases, the area sampled by the resultant ions becomes effectively more neutral, and the decay rate of the potential from the surface dopant charge with distance from the surface becomes more rapid. Therefore, the minimum ionization distance is also reduced with increasing dopant density. It is found that the detected ion-signal decreases with increasing dopant density of both p- and n- type doped Si surfaces. The higher-n Rydberg states have shown higher ion detectability than that of lower-n Rydberg states and this variation also becomes smaller when increasing the dopant density.Experiments involving H2 Rydberg molecules incident on various doped Si surfaces in the presence of a Stark field at the point of excitation are also presented here. The surface ionization profiles produced via both electron and ion detection schemes are measured by changing the Stark polarization. Positive surface dopant charges oppose production of backscattered electrons and negative surface dopant charges enhance the electron-signal. For the electron detection scheme, lightly doped n-type Si surfaces show higher detectability but in the case of p-type Si surfaces the more heavily doped Si surfaces give a higher detected signal. This different behaviour of the detected ion or electron signal implies a different production mechanism.Theoretical trajectory simulations were also carried out based on a new 2D surface potential model. The results qualitatively agree with the experimental results and explain the changes of the surface ionization profiles between the various dopant types and dopant densities of the Si surfaces.
Lithographically patterned micrometer-scale electrode arrays are used to examine the effects of controlled surface electric fields on Rydberg-atom--surface interactions. The data show that application of modest electrode biases (\ensuremath{\sim}\ifmmode\pm\else\textpm\fi{}1 V) can lead to a transition from ionization of the incident atoms by short-range tunneling to field ionization well above the target surface. The resulting ions can be efficiently detected using ion collection fields whose strengths are substantially smaller than those required for direct field ionization pointing to the application of surface ionization in the detection of low-nnn Rydberg atoms. The data are analyzed with the aid of a Monte Carlo model and further demonstrate the critical role that local surface fields can play in governing the nature of atom-surface interactions.