Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Bulletin of the American Physical Society

Two-photon absorption of path-entangled number states

Petr M. Anisimov, William N. Plick, Christoph F. Wildfeuer, Hwang Lee, Jonathan P. Dowling

Published May 21, 2009• 0 citations
OpenAlex

Related papers

Optimizing the multiphoton absorption properties of maximally path-entangled number states

William N. Plick, Christoph F. Wildfeuer, Petr M. Anisimov +1 more

In this paper we examine the $N$-photon absorption properties of maximally path-entangled number states ($N00N$ states). We consider two cases. The first involves the $N$-photon absorption properties of the ideal $N00N$ state, one that does not include spectral information. We study how the $N$-photon absorption probability of this state scales with $N$, confirming results presented by others in a previous paper by a different method. We compare this to the absorption probability of various other states. The second case is that of two-photon absorption for an $N=2$ $N00N$ state generated from a type-II spontaneous down-conversion event. In this situation we find that the absorption probability is both better than analogous coherent light (due to frequency entanglement) and highly dependent on the optical setup. We show that the poor production rates of quantum states of light may be partially mitigated by adjusting the spectral parameters to improve their two-photon absorption rates. This work has application to quantum imaging, particularly quantum lithography, where the $N$-photon absorbing process in the lithographic resist must be optimized for practical applications.

Physical Review A•Dec 9, 2009•9 citations

Entangled Photon States

Krishna Thyagarajan

Graduate texts in physics•Jan 1, 2025•0 citations

Two-Photon Spin States and Entanglement States

Xiaojing Liu, Xiang-Yao Wu, Jingbin Lu +9 more

arXiv:1401.2152•International Journal of Theoretical Physics•May 1, 2014•2 citations

Optimizing the Multi-Photon Absorption Properties of N00N States

William N. Plick, Christoph F. Wildfeuer, Petr M. Anisimov +1 more

In this paper we examine the N-photon absorption properties of "N00N" states, a subclass of path entangled number states. We consider two cases. The first involves the N-photon absorption properties of the ideal N00N state, one that does not include spectral information. We study how the N-photon absorption probability of this state scales with N. We compare this to the absorption probability of various other states. The second case is that of two-photon absorption for an N = 2 N00N state generated from a type II spontaneous down conversion event. In this situation we find that the absorption probability is both better than analogous coherent light (due to frequency entanglement) and highly dependent on the optical setup. We show that the poor production rates of quantum states of light may be partially mitigated by adjusting the spectral parameters to improve their two-photon absorption rates. This work has application to quantum imaging, particularly quantum lithography, where the N-photon absorbing process in the lithographic resist must be optimized for practical applications.

arXiv:0908.1370•Aug 10, 2009•0 citations

Two-photon quantum entanglement

Yoon-Ho Kim

•Sep 1, 2001•2 citations

A Study of the Absorption Properties of Maximally Path Entangled Number States

Bill Plick, Christoph F. Wildfeuer, Jonathan P. Dowling

We characterize the absorption of realistic Maximally Path Entangled Number States. Specifically we investigate the result of down conversion, filters and a beam splitter. Our goal is maximal absorption. Applications include Quantum Lithography and Metrology.

Frontiers in Optics•Jan 1, 2008•0 citations
In this paper we examine the NNN-photon absorption properties of maximally path-entangled number states (N00NN00NN00N states). We consider two cases. The first involves the NNN-photon absorption properties of the ideal N00NN00NN00N state, one that does not include spectral information. We study how the NNN-photon absorption probability of this state scales with NNN, confirming results presented by others in a previous paper by a different method. We compare this to the absorption probability of various other states. The second case is that of two-photon absorption for an N=2N=2N=2 N00NN00NN00N state generated from a type-II spontaneous down-conversion event. In this situation we find that the absorption probability is both better than analogous coherent light (due to frequency entanglement) and highly dependent on the optical setup. We show that the poor production rates of quantum states of light may be partially mitigated by adjusting the spectral parameters to improve their two-photon absorption rates. This work has application to quantum imaging, particularly quantum lithography, where the NNN-photon absorbing process in the lithographic resist must be optimized for practical applications.
In this paper we examine the N-photon absorption properties of "N00N" states, a subclass of path entangled number states. We consider two cases. The first involves the N-photon absorption properties of the ideal N00N state, one that does not include spectral information. We study how the N-photon absorption probability of this state scales with N. We compare this to the absorption probability of various other states. The second case is that of two-photon absorption for an N = 2 N00N state generated from a type II spontaneous down conversion event. In this situation we find that the absorption probability is both better than analogous coherent light (due to frequency entanglement) and highly dependent on the optical setup. We show that the poor production rates of quantum states of light may be partially mitigated by adjusting the spectral parameters to improve their two-photon absorption rates. This work has application to quantum imaging, particularly quantum lithography, where the N-photon absorbing process in the lithographic resist must be optimized for practical applications.