Magneto-Dynamics of a Double Quantum Dot System

N. S. Maslova, P. I. Arseyev, Vladimir N. Mantsevich

We have analyzed theoretically quenched dynamics of correlated double quantum dot (DQD) due to the switching "on" and "off" coupling to reservoirs. The possibility for controllable manipulation of charge and spin states in the double quantum dot was revealed and discussed. The proposed experimental scheme allows to prepare in DQD maximally entangled pure triplet state and to drive it to another entangled singlet state by tuning both applied bias and gate voltage. It was also demonstrated that the symmetry properties of the total system (double quantum dot coupled to electron reservoirs) allow to resolve the initially prepared two-electron states by detecting non-stationary spin-polarized currents flowing in both reservoirs and controlling the residual charge.

Eshtiaq Hjaz, Mohammad K. Elsaid, Musa El-Hasan

Madhu Thalakulam

The radio-frequency superconducting single electron transistor (RF-SET) is a highly sensitive and fast electrometer operating near the quantum limit. The back-action current noise of the SET induces voltage fluctuations on the system it is coupled to, dephasing its charge states. Here we propose to study the back action of the RF-SET by means of a double quantum dot (DQD) and, an RF-SET electrostatically coupled to one of the two dots. The inelastic current through the DQD is very sensitive to the spectral density of the voltage fluctuations in the nearby environment. By properly choosing the dot size and inter-dot tunnel barrier thickness, one can cause inelastic process to dominate the transport processes. A measurement of the inelastic current through the double dot system can then be used to calculate the spectral density of noise associated with the RF-SET and hence its back action. The design, fabrication and characterization of an RF-SET/DQD system is discussed in this work. Real-time studies of electron dynamics in coupled dots are also addressed.

Norman J. M. Horing, Jay D. Mancini

Arapat Ablimit, Dildar Hitjan, Ahmad Abliz

Abstract In this paper, we study the geometric quantum discord dynamics of the double quantum dot charge qubit in the non-Markovian environment. We apply the non-perturbative non-Markovian quantum state diffusion method to obtain the exact master equation of the double quantum dot system coupled to two independent non-zero temperature electronic baths. Then, we use this master equation to investigate the effects of non-Markovianity, inter-dot coupling strength and bath temperature on the dynamics of geometric quantum discord. Our studies show that the geometric quantum discord of a double quantum dot system can be modified and enhanced in some cases via these factors.

Ilan Bouquet, Alexander Maeder, Mathieu Luisier

By leveraging a GPU-accelerated Schrödinger-Poisson (SP) solver, we characterize exchange coupling in a hole spin double-qubit device involving a double quantum dot (DQD) system formed inside a 5-gate silicon fin field-effect transistor (FinFET) similar to real experimental structures. The self-consistent SP simulations rely on a finite difference discretization of the 3D volume and on a Luttinger-Kohn 6x6 kp Hamiltonian accounting for magnetic fields and strain distribution. They return the gate-induced confined electronic states and the corresponding electrostatic potential hosting the DQD. These quantities serve as inputs to a two-particle Hamiltonian that is constructed from single-particle Slater determinants through the configuration interaction (CI) method. By diagonalizing this two-particle Hamiltonian, the eigenstates and eigenenergies of the DQD system are obtained, together with their exchange coupling. We show that our simulation framework, using a reduced number of basis states, is capable of reproducing the magneto-electrostatic behavior of the devices of interest, as predicted from theory and observed experimentally. We finally leverage our approach to determine the optimal operating conditions of a two-qubit quantum logic gate implemented in a Si FinFET structure.