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Bulletin of the American Physical Society

Quantum Simulations with Trapped Ions

Dana J. Berkeland, David C. Lizon, Gregory Ogin, Robert Scarlett

Published May 18, 2005• 0 citations
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Trapped atomic ions are among the most advanced platforms for quantum simulation, computation, and metrology, offering long coherence times and precise, individual control over both internal and motional degrees of freedom. In this review, we present a pedagogical introduction to trapped-ion systems, covering the physics of ion trapping, qubit encodings, and laser-ion interactions. We explain how spin-dependent forces generated by light fields enable both analog and digital quantum simulations of spin and spin-boson models, as well as high-fidelity quantum logic gates. We then highlight an emerging frontier in the simulation of chemical dynamics, summarizing recent experiments that demonstrate the capability of trapped ions to simulate vibronic models and excitation-transfer processes. Finally, we outline future directions in quantum simulation and discuss open challenges in scaling up trapped-ion architectures.
Two-dimensional crystals of trapped ions are a promising system with which to implement quantum simulations of challenging problems such as spin frustration. Here, we present a design for a surface-electrode elliptical ion trap which produces a 2-D ion crystal and is amenable to microfabrication, which would enable higher simulated coupling rates, as well as interactions based on magnetic forces generated by currents which may be incorporated into the trap structure. Working in an 11 K cryogenic environment, we experimentally verify to within 10% a numerical model of the structure of ion crystals in the trap, given the measured trap anisotropy. We also explore the possibility of implementing quantum simulation using magnetic forces, and calculate J-coupling rates on the order of 103 s-1 for a trap scale of 10 μm, using a current of 1 A.