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IEEE Lasers and Electro-Optics Society Annual Meeting (LEOS)

Coherent control of excitons in quantum wells using pulse-shaping techniques

Kazuhiro Komori, T. Asahara, Takeyoshi Sugaya, M. Watanabe, Takuya Hidaka

Published Nov 27, 2002• 0 citations
Publisher

Abstract

Coherent control of excitons in semiconductors require a sophisticated control method namely the pulse shaping technique. In this paper, we report the manipulation of coherent excitons in single and coupled quantum well structure using phase-locked femtosecond pulses generated by a pulse shaping technique.
DOI
10.1109/leos.1998.737732

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In this paper, we report the manipulation of coherent exciton in single- and coupled-quantum-wells using phase locked pulses generated by pulse shaping techniques instead of Michelson interferometer. The pulse shaping system with double liquid crystal spatial light modulator, and the Ti3+-sapphire laser with pulse width of about 120 fs are used to generate phase-locked pulses. GaAs/AlGaAs quantum-wells (exciton energy: E0 equals 1.5470 eV) and asymmetric double coupled quantum-well structures (exciton energy: E1 equals 1.5348 eV, E2 equals 1.5422 eV) are used in the experiments. Manipulation of coherent exciton are demonstrated by observation of both the reflectivity-change in the pump-probe and the diffracted power in the degenerate-four-wave-mixing (DFWM) measurements using phase- locked twin-pulse (k1) and single-pulse (k2). Coherent destruction in single quantum-well is observed by the rapid decrease of reflectivity-change after the arrival of the second pulse (pulse interval: 500 fs) and good coherent control with 87% of coherent carrier destruction is demonstrated at low excitation power of 0.15 mW. In case of coupled quantum-wells, the modulation of SLM is carefully set to the twin-pulse having the spectrum with a minimum at both exciton wavelengths for destructive condition. After arrival of the second pulse, coherent control of the quantum beats are observed in DFWM signal.
We demonstrate the coherent destruction of photogenerated excitons in semiconductor quantum wells within a few hundred femtoseconds of their excitation. Coherent control of carrier dynamics is achieved with phase-locked pairs of 100 fs infrared pulses. The technique induces an optical response which is faster than the inverse of the exciton linewidth superseding Fourier limits for a single pulse. Energy selectivity enables the coherent transfer of angular momentum between hole states. Such phase-tailored pulse trains can be utilized to investigate the generation process and intermediate virtual states in quantum structures.
In this paper, we report ultrafast manipulation of coherent excitons in quantum-wells using phase locked pulse sequence prepared by a frequency domain shaping technique. The pulse shaping system with double liquid crystal spatial light modulator (SLM) and the Ti3+-sapphire laser are used to generate phase-locked pulses. Ultrafast coherent control of exciton population and exciton polarization is demonstrated by the observation of the reflectivity-change in the pump-probe and the diffracted power in the degenerate-four-wave-mixing measurements. In the single quantum wells, good coherent control characteristics with 87% of coherent carrier destruction is demonstrated at low excitation power of 0.15 mW (approximately 1.1 X 1010 photons/cm2). Also the preliminary manipulation of the exciton population is demonstrated by the phase locked multi-pulses. In case of coupled quantum-wells, the modulation of SLM is carefully controlled and coherent control of both the exciton population and the polarization are demonstrated in the two different coupled quantum well samples.