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Subnanosecond control of excitons in coupled quantum well nanostructures : photonic storage and Exciton Conveyer devices

Alexander Winbow

Published Jan 1, 2010• 1 citation
OpenAlex

Abstract

Indirect excitons in GaAs coupled quantum well nanostructures are a versatile system for fundamental study of cold neutral bosonic gases and demonstration of novel optoelectronic devices based on excitons -- a bound electron-hole pair -- rather than electrons. Indirect exciton lifetimes range from nanoseconds to microseconds and cool rapidly after photoexcitation to the lattice temperature. Lithographically-patterned electrodes enable design of potential energy landscapes, and both energy and lifetime can be controlled in situ, rapidly, on timescales much shorter than the exciton lifetime. Such intrinsically optoelectronic devices can operate at speeds relevant to optical networks, and later be fabricated in other semiconductors for higher-temperature operation. Two different kinds of devices are demonstrated Photon storage -- an optical memory -- with 250 ps rise time of the readout optical signal and storage time reaching microseconds was implemented with indirect excitons in CQW. The storage and release of photons was controlled by the gate voltage pulse, and the transient processes in the CQW studied by measuring the kinetics of the exciton emission spectra. This control of excitons on timescales much shorter than the exciton lifetime demonstrates the feasibility of studying excitons in in situ controlled electrostatic traps. The Exciton Conveyer is a laterally moving electrostatic lattice potential for actively transporting excitons. Generated by laterally modulated electrodes, the potential velocity and depth are controlled in situ by frequency and voltage. We observed exciton transport characterized by average exciton cloud spatial extension over several tens of microns, and observed dynamical localization-delocalization transitions for the excitons in the conveyer : In the localization regime of deeper potentials and moderate exciton density, excitons are moved by the conveyer; in the delocalized regime of shallower lattice potential or high exciton density, excitons do not follow the conveyer motion. We explore conveyer velocities both slower and faster than phonon velocities. Realizing subnanosecond manipulations of exciton energy and lifetime required versatile control of pulsed and multiple AC RF electrical signals in optical, liquid helium cryogenic systems. Considerable detail is presented of design, construction, and test of flexible experimental apparatus

Related papers

Photon storage with subnanosecond readout rise time in coupled quantum wells

A. G. Winbow, L. V. Butov, Arthur C. Gossard

Photon storage with 250 ps rise time of the readout optical signal was implemented with indirect excitons in coupled quantum well (CQW) nanostructures. The storage and release of photons was controlled by the gate voltage pulse. The transient processes in the CQW were studied by measuring the kinetics of the exciton emission spectra after application of the gate voltage pulse. Strong oscillations of the exciton emission wavelength were observed in the transient regime when the gate voltage pulse was carried over an ordinary wire. Gating the CQW via an impedance-matched broadband transmission line has lead to an effective elimination of these transient oscillations and expedient switching of the exciton energy to a required value within a short time, much shorter than the exciton lifetime.

arXiv:0807.4920•Journal of Applied Physics•Sep 15, 2008•13 citations

Photon Storage with Nanosecond Switching in Coupled Quantum Well Nanostructures

Alexander Winbow, Aeron Tynes Hammack, Леонид Викторович Бутов +1 more

Photon storage with nanosecond switching was implemented with indirect excitons in coupled quantum well nanostructures. The storage and release of photons was controlled by the gate voltage pulses. The nanosecond write and readout times were much shorter than the storage time, which reached microseconds. Furthermore, the presented control of excitons on a time scale much shorter than the exciton lifetime demonstrates the feasibility of studying excitons in in situ controlled electrostatic traps.

Nano Letters•Apr 11, 2007•47 citations

Picosecond Nonlinear Optical Studies of Exciton Relaxation in Multiple Quantum Well Structures.

Michael D. Webb

This work presents new results of experimental studies of exciton relaxation in GaAs/AlGaAs multiple quantum well materials, using transient nonlinear laser spectroscopy techniques. In the low excitation regime, effective optical Bloch equations similar to the density matrix formalism of a two-level system describe the response. Solutions of these equations appropriate for three-pulse scattering studies are presented, along with a discussion of new experimental techniques used in this work. Non-ideal conditions present in the molecular beam epitaxy growth process introduce monolayer fluctuations in the quantum well thickness, leading to inhomogeneous broadening and exciton localization at sites of minimum energy. Localized excitons are separated in energy from extended, quasi-delocalized states by the mobility edge. Studies of localized exciton relaxation indicate that these excitons relax on a much slower timescale than delocalized excitons. The temperature dependence of the localized exciton relaxation rate shows that above 15K, the excitons are thermally activated to extended states above the mobility edge. Below 15K the excitons relax by phonon assisted migration between localization sites. For temperatures above 5K, and for exciton energies greater than 1 meV below line center, an extra dephasing mechanism characterizes the exciton relaxation. The inhomogeneous broadening of the exciton leads to the emission of stimulated photon echoes in the experimental geometry used in this work. The time-resolved emission demonstrates the stimulated photon echo nature at low excitation densities. At higher excitation densities, the decay dynamics is more complex. The time-resolved emission shows the presence of a stimulated photon echo and a free polarization decay. This unusual result suggests that both a homogeneous and an inhomogeneous exciton distribution comprise the exciton resonance. Exciton relaxation at low excitation densities represents the interaction of the exciton with the lattice. At higher excitation densities, exciton-exciton and exciton-free carrier interactions modify the relaxation rates. The dependence of the exciton relaxation rate on excitation density shows that many-body effects play an important role in the exciton physics. Free carrier interactions are more efficient at increasing the exciton relaxation rate; both types of interactions are more important in quantum well systems than in bulk materials.

•Jan 1, 1990•0 citations

Picosecond Dynamics in Optically ExcitedSemiconductors: Exciton Dephasing,Ionization Equilibrium and Pauli Blocking

Rocharj Mondal

Excitons, the bound states of an electron and a hole, in semiconductors are interesting objects and they continue to attract attention of researchers from all over the world. Despite intense research on exciton physics over last three-four decades, many interesting phenomena related to the dynamics and the nonlinear optical properties of excitons in semiconductors and their nanostructures in the coherent and incoherent regimes are still to be explored. This thesis presents our effort to study the nonlinear optical properties as well as the exciton dynamics in coherent and incoherent regime in semiconductor nanostructures including GaAs quantum wells (QWs) and InAs quantum dots (QDs). We have set up several time-resolved and steady-state optical spectroscopic measurement techniques in our laboratory to carry out our study on excitons dynamics in semiconductor QWs and QDs. We work out a clear and detailed theory of the pump-probe signal taking account of all aspect of the measurement, namely, the lock-in detection, spectral selection by the monochromator and time-integration at the slow photodetector. We have used the formalism of optical Bloch equations conventionally used to analyse wave mixing experiments. Our analysis puts the pump-probe technique on the same footing as the wave mixing experiments. We show that pumpprobe experiments can be used to study both coherent and incoherent dynamics. We also present a clear physical picture of the measured signal using the Lorentz harmonic oscillator model. We report the investigation of the coherent exciton dephasing dynamics using pumpprobe reflectivity measurement in GaAs QWs for resonant excitation. Two GaAs/AlGaAs QWs with well thicknesses 8 nm and 17.5 nm are used. We found a strong dependence of the dephasing rate of the excitons with increasing exciton density due to exciton-exciton scattering. We found that the exciton dephasing rate of 8 nm QWs at low excitation density and at low lattice temperature is larger than the corresponding dephasing rate of the 17.5 nm QWs, possibly due to larger effect of inhomogeneous broadening. We also report that the dephasing rates for both QWs are linear with the sample temperature below the 30 K. We report the study of ionization equilibrium between the exciton and the electronhole plasma population in the temperature and pressure (excitation density) phase space. Non-resonant excitation of semiconductor creates a nonequilibrium state of electron-hole plasma. We investigate this ionization equilibrium using steady state photoluminescence and time-resolved excitation correlation PL measurements. We present a clear phase diagram (in temperature and carrier density phase space) of this ionization process.A clear density-dependent increase in the ionization ratio is observed and its connection with the Mott transition is discussed. Semiconductor nanocrystals and QDs are another important area of research, mainly due to their huge potential for device application. We present a simple model which combines carrier loss kinetics, detailed balance principle in thermodynamic equilibrium and Pauli exclusion principle to quantitatively explain the observed behaviour of the experimental data.

•Sep 1, 2015•0 citations

Transient nonlinear spectroscopy of indium arsenide quantum dots: Coherent and incoherent dynamics of confined excitons.

Anthony S. Lenihan

The three-dimensional confinement created by the ultrasmall semiconductor structures known as quantum dots greatly modifies the optical properties of the spatially localized carriers. These systems are presently of great interest to the research community, both for the improved understanding of the physics of confined structures, and for the potential applications of these systems to areas such as optoelectronics and quantum computing. Here, the techniques of transient coherent nonlinear optical spectroscopy are applied to the investigation of excitons confined within InAs/GaAs self-assembled quantum dots. These methods provide a powerful tool for the study of dynamic processes in these novel materials. The nonlinear measurements are based on the differential transmission experimental geometry, and utilize ultrafast pulsed lasers in order to temporally resolve the carrier dynamics after excitation. The experiments performed here are resonant with the ground state absorption of the quantum dots, as evidenced by comparison with the photoluminescence measurements which are used to characterize the sample. The incoherent relaxation dynamics of the population of photoexcited excitons are examined, allowing for a determination of both the lifetime of the excitons and the time scale for relaxation between the two polarization eigenstates of the system. The three-dimensional quantum confinement results in the suppression of these relaxation processes, as predicted. The use of coherent spectroscopic techniques allows for the first unambiguous demonstration of an optically-induced nonradiative Raman coherence in these quantum dots. Simultaneous excitation of both polarization states of the exciton results in a coherent superposition state, whose temporal evolution is observed through the homodyne-detection scheme. In these transient experiments, this is manifested as a beating in the nonlinear response, which allows us to directly measure the fine-structure splitting between the polarization states. Utilizing optical pulse shaping techniques, transient spectral hole burning is performed, which allows for the nonlinear response to be spectrally resolved. As expected for the strongly confined quantum dot excitons, the results show that diffusion among the localized states is not a significant effect. Temperature dependent measurements show that at elevated temperatures, extra dephasing processes, potentially related to acoustic phonon scattering, become important. Finally, this technique allows for the first direct observation of the induced absorption from the exciton to biexciton transition in these InAs quantum dots, and a measurement of the associated binding energy. These results lay the foundation for future studies in this material system, and for the possible development of quantum logic devices utilizing quantum dots.

•Jan 1, 2002•0 citations

Exciton Storage in Semiconductor Self-Assembled Quantum Dots

T. Lundström, Winston Vaughan Schoenfeld, H. Lee +1 more

Storage and retrieval of excitons were demonstrated with semiconductor self-assembled quantum dots (QDs). The optically generated excitons were dissociated and stored as separated electron-hole pairs in coupled QD pairs. A bias voltage restored the excitons, which recombined radiatively to provide a readout optical signal. The localization of the spatially separated electron-hole pair in QDs was responsible for the ultralong storage times, which were on the order of several seconds. The present limits of this optical storage medium are discussed.

Science•Dec 17, 1999•267 citations
Indirect excitons in GaAs coupled quantum well nanostructures are a versatile system for fundamental study of cold neutral bosonic gases and demonstration of novel optoelectronic devices based on excitons -- a bound electron-hole pair -- rather than electrons. Indirect exciton lifetimes range from nanoseconds to microseconds and cool rapidly after photoexcitation to the lattice temperature. Lithographically-patterned electrodes enable design of potential energy landscapes, and both energy and lifetime can be controlled in situ, rapidly, on timescales much shorter than the exciton lifetime. Such intrinsically optoelectronic devices can operate at speeds relevant to optical networks, and later be fabricated in other semiconductors for higher-temperature operation. Two different kinds of devices are demonstrated Photon storage -- an optical memory -- with 250 ps rise time of the readout optical signal and storage time reaching microseconds was implemented with indirect excitons in CQW. The storage and release of photons was controlled by the gate voltage pulse, and the transient processes in the CQW studied by measuring the kinetics of the exciton emission spectra. This control of excitons on timescales much shorter than the exciton lifetime demonstrates the feasibility of studying excitons in in situ controlled electrostatic traps. The Exciton Conveyer is a laterally moving electrostatic lattice potential for actively transporting excitons. Generated by laterally modulated electrodes, the potential velocity and depth are controlled in situ by frequency and voltage. We observed exciton transport characterized by average exciton cloud spatial extension over several tens of microns, and observed dynamical localization-delocalization transitions for the excitons in the conveyer : In the localization regime of deeper potentials and moderate exciton density, excitons are moved by the conveyer; in the delocalized regime of shallower lattice potential or high exciton density, excitons do not follow the conveyer motion. We explore conveyer velocities both slower and faster than phonon velocities. Realizing subnanosecond manipulations of exciton energy and lifetime required versatile control of pulsed and multiple AC RF electrical signals in optical, liquid helium cryogenic systems. Considerable detail is presented of design, construction, and test of flexible experimental apparatus
Photon storage with 250 ps rise time of the readout optical signal was implemented with indirect excitons in coupled quantum well (CQW) nanostructures. The storage and release of photons was controlled by the gate voltage pulse. The transient processes in the CQW were studied by measuring the kinetics of the exciton emission spectra after application of the gate voltage pulse. Strong oscillations of the exciton emission wavelength were observed in the transient regime when the gate voltage pulse was carried over an ordinary wire. Gating the CQW via an impedance-matched broadband transmission line has lead to an effective elimination of these transient oscillations and expedient switching of the exciton energy to a required value within a short time, much shorter than the exciton lifetime.
This work presents new results of experimental studies of exciton relaxation in GaAs/AlGaAs multiple quantum well materials, using transient nonlinear laser spectroscopy techniques. In the low excitation regime, effective optical Bloch equations similar to the density matrix formalism of a two-level system describe the response. Solutions of these equations appropriate for three-pulse scattering studies are presented, along with a discussion of new experimental techniques used in this work. Non-ideal conditions present in the molecular beam epitaxy growth process introduce monolayer fluctuations in the quantum well thickness, leading to inhomogeneous broadening and exciton localization at sites of minimum energy. Localized excitons are separated in energy from extended, quasi-delocalized states by the mobility edge. Studies of localized exciton relaxation indicate that these excitons relax on a much slower timescale than delocalized excitons. The temperature dependence of the localized exciton relaxation rate shows that above 15K, the excitons are thermally activated to extended states above the mobility edge. Below 15K the excitons relax by phonon assisted migration between localization sites. For temperatures above 5K, and for exciton energies greater than 1 meV below line center, an extra dephasing mechanism characterizes the exciton relaxation. The inhomogeneous broadening of the exciton leads to the emission of stimulated photon echoes in the experimental geometry used in this work. The time-resolved emission demonstrates the stimulated photon echo nature at low excitation densities. At higher excitation densities, the decay dynamics is more complex. The time-resolved emission shows the presence of a stimulated photon echo and a free polarization decay. This unusual result suggests that both a homogeneous and an inhomogeneous exciton distribution comprise the exciton resonance. Exciton relaxation at low excitation densities represents the interaction of the exciton with the lattice. At higher excitation densities, exciton-exciton and exciton-free carrier interactions modify the relaxation rates. The dependence of the exciton relaxation rate on excitation density shows that many-body effects play an important role in the exciton physics. Free carrier interactions are more efficient at increasing the exciton relaxation rate; both types of interactions are more important in quantum well systems than in bulk materials.
Excitons, the bound states of an electron and a hole, in semiconductors are interesting objects and they continue to attract attention of researchers from all over the world. Despite intense research on exciton physics over last three-four decades, many interesting phenomena related to the dynamics and the nonlinear optical properties of excitons in semiconductors and their nanostructures in the coherent and incoherent regimes are still to be explored. This thesis presents our effort to study the nonlinear optical properties as well as the exciton dynamics in coherent and incoherent regime in semiconductor nanostructures including GaAs quantum wells (QWs) and InAs quantum dots (QDs). We have set up several time-resolved and steady-state optical spectroscopic measurement techniques in our laboratory to carry out our study on excitons dynamics in semiconductor QWs and QDs. We work out a clear and detailed theory of the pump-probe signal taking account of all aspect of the measurement, namely, the lock-in detection, spectral selection by the monochromator and time-integration at the slow photodetector. We have used the formalism of optical Bloch equations conventionally used to analyse wave mixing experiments. Our analysis puts the pump-probe technique on the same footing as the wave mixing experiments. We show that pumpprobe experiments can be used to study both coherent and incoherent dynamics. We also present a clear physical picture of the measured signal using the Lorentz harmonic oscillator model. We report the investigation of the coherent exciton dephasing dynamics using pumpprobe reflectivity measurement in GaAs QWs for resonant excitation. Two GaAs/AlGaAs QWs with well thicknesses 8 nm and 17.5 nm are used. We found a strong dependence of the dephasing rate of the excitons with increasing exciton density due to exciton-exciton scattering. We found that the exciton dephasing rate of 8 nm QWs at low excitation density and at low lattice temperature is larger than the corresponding dephasing rate of the 17.5 nm QWs, possibly due to larger effect of inhomogeneous broadening. We also report that the dephasing rates for both QWs are linear with the sample temperature below the 30 K. We report the study of ionization equilibrium between the exciton and the electronhole plasma population in the temperature and pressure (excitation density) phase space. Non-resonant excitation of semiconductor creates a nonequilibrium state of electron-hole plasma. We investigate this ionization equilibrium using steady state photoluminescence and time-resolved excitation correlation PL measurements. We present a clear phase diagram (in temperature and carrier density phase space) of this ionization process.A clear density-dependent increase in the ionization ratio is observed and its connection with the Mott transition is discussed. Semiconductor nanocrystals and QDs are another important area of research, mainly due to their huge potential for device application. We present a simple model which combines carrier loss kinetics, detailed balance principle in thermodynamic equilibrium and Pauli exclusion principle to quantitatively explain the observed behaviour of the experimental data.
The three-dimensional confinement created by the ultrasmall semiconductor structures known as quantum dots greatly modifies the optical properties of the spatially localized carriers. These systems are presently of great interest to the research community, both for the improved understanding of the physics of confined structures, and for the potential applications of these systems to areas such as optoelectronics and quantum computing. Here, the techniques of transient coherent nonlinear optical spectroscopy are applied to the investigation of excitons confined within InAs/GaAs self-assembled quantum dots. These methods provide a powerful tool for the study of dynamic processes in these novel materials. The nonlinear measurements are based on the differential transmission experimental geometry, and utilize ultrafast pulsed lasers in order to temporally resolve the carrier dynamics after excitation. The experiments performed here are resonant with the ground state absorption of the quantum dots, as evidenced by comparison with the photoluminescence measurements which are used to characterize the sample. The incoherent relaxation dynamics of the population of photoexcited excitons are examined, allowing for a determination of both the lifetime of the excitons and the time scale for relaxation between the two polarization eigenstates of the system. The three-dimensional quantum confinement results in the suppression of these relaxation processes, as predicted. The use of coherent spectroscopic techniques allows for the first unambiguous demonstration of an optically-induced nonradiative Raman coherence in these quantum dots. Simultaneous excitation of both polarization states of the exciton results in a coherent superposition state, whose temporal evolution is observed through the homodyne-detection scheme. In these transient experiments, this is manifested as a beating in the nonlinear response, which allows us to directly measure the fine-structure splitting between the polarization states. Utilizing optical pulse shaping techniques, transient spectral hole burning is performed, which allows for the nonlinear response to be spectrally resolved. As expected for the strongly confined quantum dot excitons, the results show that diffusion among the localized states is not a significant effect. Temperature dependent measurements show that at elevated temperatures, extra dephasing processes, potentially related to acoustic phonon scattering, become important. Finally, this technique allows for the first direct observation of the induced absorption from the exciton to biexciton transition in these InAs quantum dots, and a measurement of the associated binding energy. These results lay the foundation for future studies in this material system, and for the possible development of quantum logic devices utilizing quantum dots.
Storage and retrieval of excitons were demonstrated with semiconductor self-assembled quantum dots (QDs). The optically generated excitons were dissociated and stored as separated electron-hole pairs in coupled QD pairs. A bias voltage restored the excitons, which recombined radiatively to provide a readout optical signal. The localization of the spatially separated electron-hole pair in QDs was responsible for the ultralong storage times, which were on the order of several seconds. The present limits of this optical storage medium are discussed.