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Conference on Lasers and Electro-Optics

Biexponential decoherence in photon echoes: spectral evidence for nearly degenerate localized excitons

John Erland, J.C. Kim, D. Gammon, DuncanG Steel

Published Nov 27, 2002• 0 citations
Publisher

Abstract

Summary form only given.Much recent progress has been made in the understanding of the optical response of low dimensional semiconductors. However, additional complications of strong localization and their effects on dynamics and the coherent optical response remain unresolved. Using a highly disordered GaAs single quantum well (width 42 /spl Aring/), we report the nonlinear signal in a self-diffracted transient four-wave mixing (FWM) experiment extending over more than three decades in amplitude as a function of pulse delay.

DOI
10.1109/iqec.1998.680423

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Summary form only given.Much recent progress has been made in the understanding of the optical response of low dimensional semiconductors. However, additional complications of strong localization and their effects on dynamics and the coherent optical response remain unresolved. Using a highly disordered GaAs single quantum well (width 42 /spl Aring/), we report the nonlinear signal in a self-diffracted transient four-wave mixing (FWM) experiment extending over more than three decades in amplitude as a function of pulse delay.
The polarization dependence of the ultrafast nonlinear response of localized excitons in GaAs/AlGaAs quantum wells has been investigated by spectrally resolved, transient four-wave mixing. The role of the excitation-induced dephasing in the delay dependence of the signal is discussed in detail. In particular, we show experimentally that the excitation-induced dephasing gives rise to a photon echo in inhomogeneous systems. We develop a simple analytical model for the delay dependence of the signal, which enables us to deduce the dephasing time from the four-wave mixing decay.
Coherent optical spectroscopy in the form of nonlinear transient four-wave mixing (TFWM) and linear resonant Rayleigh scattering (RRS) has been applied to investigate the exciton dynamics of low-dimensional semiconductor heterostructures. The dephasing times of excitons are determined from the decay of the spectrally resolved non- linear signal as a function of the delay between the incident pulses in a two-beam TFWM experiment, and from the real time analysis of single speckles in RRS experiments (pure dephasing). From the density- and temperature- dependence of the dephasing times the exciton-exciton and the exciton-phonon interactions are determined. The degree of coherence of the secondary emission is determined from the speckle analysis.
The coherent response of excitons in semiconductor nanostructures measured in four-wave mixing (FWM) depends strongly on the inhomogeneous broadening of the exciton transition. We investigate GaAs/Al0.3Ga0.7As single quantum wells (SQW) and AlxGa1-xAs mixed crystals. Additional to the usual phase-space filling nonlinearity, excitation-induced dephasing (EID) and biexciton formation (BIF) are important. EID leads to a strong dependence of the signal on the angle between the linear input polarizations. We find that EID persists in inhomogeneous systems, showing that the mutual density-dependent dephasing rate difference between two subsystems within the inhomogeneous distribution is strongly dependent on their energy difference. BIF is strongly affecting the cross-linear polarized FWM response. The signal for positive delay is dominated by the transitions from the one-exciton state X to the two-exciton states. Here, the third-order polarization at X-XX is not at the same resonance as the first-order polarization at 0-X. Consequently, the rephasing of the microscopic third-order polarization to the macroscopic FWM photon echo is blurred by the non-perfect correlation of X and XX energies, leading to a fast and non-exponential signal decay in delay time. For inhomogeneous broadenings larger than the biexciton binding energy, we find an enhanced biexciton binding energy, and a quenching of the oscillator strength of the unbound biexciton.
Summary form only given.The coherent response of excitons in semiconductor nanostructures, as measured in four wave mixing (FWM) experiments, depends strongly on the inhomogeneous broadening of the exciton transition. We investigate GaAs-AlGaAs single quantum wells (SQW) of 4 nm to 25 nm well width. Two main mechanisms are found to be important. First, the excitation-induced dephasing FWM signal (EID), which leads to a strong dependence of the signal on the angle between the linear input polarizations. The presence of the EID in the mainly homogeneously broadened sample (25 nm) is shown by the beating between EID and two-photon coherence (TPC) at the exciton for negative delay and co-linear polarized excitation. It vanishes for cross-polarized excitation, thus excluding the importance of local-field effects.
We investigate the spectral properties of the excitonic nonlinear response in a GaAs quantum-well sample containing wells of different thicknesses. We observe both the heavy-hole biexciton and the light-hole biexciton in the transient four-wave mixing spectrum and estimate their binding energy dependence on well width. For moderate excitation densities the signal for negative delay at the heavy-hole exciton and biexciton resonances is due to two-photon transitions to the biexciton states through the exciton states. The temporal behavior of the transient four-wave mixing signal from the heavy-hole exciton resonance is strongly dependent on the spectral position of the laser. We show that this effect is due to interference phenomena and to excitation-induced dephasing.
Coherently controlled four-wave-mixing (FWM) measurements have turned out to be a very sensitive tool to investigate the microscopic origin of the nonlinear optical response of semiconductor quantum-well structures, in particular if excitons are excited [1-3]. The measured signal oscillates as a function of the phase difference of the two interferometric pulses and is modulated additionally by contributions that oscillate with integer multiples of the excitonic resonance frequency. The influence of these harmonics can be measured in background free directions, i.e., the first (FWM) or second (six-wave mixing, SWM) diffracted order in direction 2k2-k1 or 3k2-2k1, respectively. Their intensity is easily quantified by inspecting the corresponding Fourier transforms (FT). Here, we report on transient interferometric SWM measurements and the influence of biexcitons on the signal.