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Conference on Lasers and Electro-Optics

Temperature dependence of the squeezing bandwidth of sub-Poissonian light from a light-emitting diode

J. Abe, Takuya Hirano, T. Kuga, M. Yamanishi

Published Nov 27, 2002• 0 citations
Publisher

Abstract

Summary form only given.We have measured the squeezing bandwidth as a function of the operating temperature. The experimental setup is shown. A LED (Hitachi HE8812SG), which is a GaAlAs LED with a double heterojunction structure, is connected through a metal-film resistor (R) to a constant voltage power supply, and generates sub-Poissonian light.

DOI
10.1109/iqec.1998.680264

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Summary form only given.We have measured the squeezing bandwidth as a function of the operating temperature. The experimental setup is shown. A LED (Hitachi HE8812SG), which is a GaAlAs LED with a double heterojunction structure, is connected through a metal-film resistor (R) to a constant voltage power supply, and generates sub-Poissonian light.
We investigated extensively the sub-Poissonian-photon-state generation by the microscopic backward-pump (BP) process in a semiconductor heterojunction light-emitting diode (LED) under constant-voltage operation. In particular, the BP rate relative to the forward pump rate has been carefully evaluated from the dc characteristics of the LED and shown to depend strongly on the injection current and the device temperature. We then compare the experimental results of the photon-number squeezing performed at various temperatures in the constant-voltage-drive setup with the theoretical prediction estimated numerically using the parameter values determined from the dc measurements. As a consequence, it was proven that the observed squeezing at room temperature is successfully interpreted only in terms of the nonlinear BP model, while that at low temperature $(\ensuremath{\sim}100 \mathrm{K})$ is explained simply by the conventional model based on macroscopic Coulomb-blockade effect for the pump-noise suppression.
Summary form only given. Generally, light-emitting diodes (LEDs) are considered to be low-performance devices in comparison with laser diodes (LDs). However, for future applications such as the parallel inter- or intra-integrated-circuit chip optical-connections, where very low power-consumption is required for the light emitters, a LED can be a very attractive device because of the threshold-free input-output characteristics. So far, continuous efforts have been made to improve the performance of LEDs. In this paper, we focus on another very important aspect, i.e. the noise characteristics. In comparison with LDs, in general, LEDs exhibit excellent noise characteristics, particularly at low injection levels. We show that the intensity fluctuation of the output light from an LED can be squeezed below the full shot-noise (FSN) level in a wide frequency range up to 800 MHz at room temperature. Such a squeezing bandwidth, three orders of magnitude wider than that in the first report on shot-noise suppression in a LED and rather close to the widest bandwidth (1.1 GHz) obtained with LDs at 77 K has been believed to be impossible. In addition, use of a separate confinement hetero(SCH-) structure in the active region allowed us to use a moderate doping concentration (5 /spl times/ 10/sup 18/ cm/sup -3/), resulting in a sufficiently high internal quantum efficiency, /spl sim/30%.
We drive a high-efficiency gallium arsenide light emitting diode (LED) with a low-noise current and measure the noise in the detected photocurrent from a high-quantum-efficiency silicon photodiode collecting most of the emitted light. The drive current is obtained from a resistor in series with a low-noise voltage supply. The Johnson noise in the current is much less than shot noise whenever the voltage across the resistor is large compared with 50 mV (2kT/e at room temperature). The LED converts electrons to photons directly with some efficiency η.
Physical mechanisms which limit the squeezing bandwidth in a heterojunction light-emitting diode (LED) have been extensively studied both theoretically and experimentally. It is proven that our experimental results of pump-current dependence of the squeezing bandwidth in the constant-current-driven heterojunction LED at room temperature cannot be explained by previous theoretical predictions. We present a theoretical framework, including the effects of a microscopic backward-pump (BP) process, generally applicable to a heterojunction LED. Parameters describing the relative significance of the BP process are determined by the measurements of current-versus-voltage characteristic and differential resistance of the LED, independent of the noise measurements. As a consequence, the experimental results can be explained by our model in a unified manner over a whole range of injection current, and it is clarified that the pump situation of the LED moves continuously from thermionic emission to diffusion limits with increasing pump current.