We introduce a minimal effective framework designed to address the anomalous low-temperature thermodynamics observed in strongly disordered interacting systems near a metal-insulator transition, such as doped semiconductors. Our approach examines how a strongly inhomogeneous electronic bath quenches dilute pairs of local magnetic moments. By solving the resulting two-impurity Kondo-Heisenberg problem within a large-
N variational framework, we capture the competition between Kondo screening and random-singlet formation. Both mechanisms give rise to singular thermodynamic responses, producing a magnetic susceptibility of the form
χ(T)∼T−α, where the exponent
α evolves smoothly with model parameters and saturates in the metallic regime, consistent with experimental observations. Our results establish a unified framework that connects random-singlet physics and disorder-induced Kondo screening in strongly disordered correlated materials.
The finite-temperature density-matrix renormalization-group method is applied to the one-dimensional Kondo lattice model near half filling to study its thermodynamics. The spin and charge susceptibilities and entropy are calculated down to T=0.03t. We find two crossover temperatures near half filling. The higher crossover temperature continuously connects to the spin gap at half filling, and the susceptibilities are suppressed around this temperature. At low temperatures, the susceptibilities increase again with decreasing temperature when doping is finite. We confirm that they finally approach to the values obtained in the Tomonaga-Luttinger (TL) liquid ground state for several parameters. The crossover temperature to the TL liquid is a new energy scale determined by gapless excitations of the TL liquid. The transition from the metallic phase to the insulating phase is accompanied by the vanishing of the lower crossover temperature.