van der Waals interactions between an atom and a planar surface exhibit a quadrupolar component in D(2)(z)-D(2)/3 (D, atomic dipole; ź, normal to surface). This coupling is responsible for an atom symmetry break, mixing levels of the same parity such as metastable 3P0, 3P2 levels of rare gas atoms. The strongly exoenergic 3P0-3P2 transition in Ar and Kr is observed by a time-of-flight technique, using as a surface the edge of a copper slit. The results confirm the predicted strong peaking of the angular distribution of inelastically scattered atoms and give a good estimate of the transition probability.
This chapter deals with atom-wall interaction occurring in the "long-range" regime (typical distances: 1-1000 nm), when the electromagnetic fluctuations of an isolated atom are modified by the vicinity with a surface. Various regimes of interaction are discussed in an Introductory part, from Cavity Quantum ElectroDynamics modifications of the spontaneous emission, to Casimir effect, with emphasis on the atom-surface van der Waals interaction, characterized as a near-field interaction governed by a z-3 dependence. The major part of the Chapter focuses on the experimental measurements of this van der Waals interaction, reviewing various recent techniques, and insists upon optical techniques, and notably selective reflection spectroscopy which is particularly well-suited when excited atoms are considered. A review of various experiments illustrates the specific effects associated with a resonant coupling between the atomic excitation and surface modes, from van der Waals repulsion to surface-induced resonant transfer, and with anisotropy effects, including metastability transfer induced by a quadrupole contribution in the interaction. The effects of a thermal excitation of the surface -with a possible remote energy transfer to an atom-, and of interaction with nanobodies -which are intrinsically non planar- are notably discussed among the prospects.
A tutorial overview is given on interactions between atoms and surfaces that are mediated by the electromagnetic field. The emphasis is on dispersion (or van der Waals) forces and transitions induced by thermal fluctuations in the near field of a surface. Applications with cold atoms held in microscopic traps near surfaces ("atom chips") provide the experimental background for this theory lecture. We do not cover the chemical physics aspects that are relevant at distances comparable to the atomic scale, like adsorption and diffusion on surfaces, growth of nanostructures, or atomic beam diffraction from crystalline surfaces. These are covered by other lecturers.
Selective reflection spectroscopy at an interface with a low-density resonant vapor, especially when combined with a frequency modulation technique, is a high-resolution Doppler-free tool for probing atoms interacting with a surface. We analyze different types of relevant surface interaction, emphasizing the spectral consequences of a van der Waals surface attraction associated to a
z−3 potential dependence (
z: distance to the wall). We present detailed results of two series of experiments at a Cs vapor/dielectric window interface on the 6S
1/2-6P
3/2 (
λ=852 nm) resonance line and on the 6S
1/2-7P second resonance line (
λ=455 nm and 459 nm). Lineshape analysis at various pressures consistently shows that a van der Waals-type surface attraction has to be considered to interpret strong lineshape distortions and resonance shift. The attractive strengths are found to be equal respectively to
≈2 kHz
μm
3 and
≈20 kHz
μm
3, independently of the considered hyperfine component, within the experimental accuracy. It yields also typical parameters of pressure broadening and shift, which are shown to originate in collisional processes, at densities where the medium is opaque. Theoretical expectations for the VW strength are discussed on the basis of the results of atomic theory. The predicted values are smaller, by a typical factor of 2, than those deduced from the experiments. The validity of the theory, when applied to a dielectric interface, is discussed and seems questionable when the frequency of virtual atomic transitions involved in the van der Waals attraction potential lies in the dielectric window absorption range.