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Superconducting nanowire single-photon detectors and sub-10-nm lithography

Joel K. W. Yang

Published Jan 1, 2009• 2 citations
OpenAlex

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Abstract This paper describes a new approach to the fabrication of superconducting nanowire single-photon detectors from ultrathin NbN films on SiO 2 substrates. The technology is based on nonlinear femtosecond optical lithography and includes direct formation of the sensitive element of the detector (the meander) through femtosecond laser exposure of the polymethyl methacrylate resist at a wavelength of 525 nm and subsequent removal of NbN using plasma-chemical etching. The nonlinear femtosecond optical lithography method allows the formation of planar structures with a spatial resolution of ~50 nm. These structures were used to fabricate single-photon superconducting detectors with quantum efficiency no worse than 8% at a wavelength of 1310 nm and dark count rate of 10 s −1 at liquid helium temperature.
In this work we present a new fabrication process that enabled the fabrication of superconducting nanowire single photon detectors SNSPD with fill-factors as high as 88% with gaps between nanowires as small as 12 nm. This fabrication process combined high-resolution electron-beam lithography with photolithography. Although this work was motivated by the potential of increased detection efficiency with higher fill-factor devices, test results showed an unexpected systematic suppression in device critical currents with increasing fill-factor.
Nanoscopic superconducting meander patterns offer great promise as a new class of cryogenic radiation sensors capable of single photon detection. To realize this potential, control of the superconducting properties on the nanoscale is imperative. To this end, Superconducting Nanowire Single Photon Detectors (SNSPDs) are under development by means Energetic Neutral Atom Beam Lithography and Epitaxy, or ENABLE. ENABLE can growth highly-crystalline, epitaxial thin-film materials, like NbN, at low temperatures; such wide-ranging control of fabrication parameters is enabling the optimization of film properties for single photon detection. T{sub c}, H{sub c2}, {zeta}{sub GL} and J{sub c} of multiple thin films and devices have been studied as a function of growth conditions. The optimization of which has already produced devices with properties rivaling all reports in the existing literature.