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Conference on Precision Electromagnetic Measurements

Parity-controlled charge modulation of the supercurrent in the single electron transistor

P. Joyez, D. Vion, Vincent Bouchiat, D. Esteve, Michel Devoret

Published Dec 17, 2002• 0 citations
Publisher

Abstract

We have measured the parity-controlled charge modulation of the supercurrent in a superconducting single electron transistor, at different magnetic field and temperatures. We observed the characteristic features of the poisoning of the supercurrent enhancement.>
DOI
10.1109/cpem.1994.333354

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We have measured the supercurrent branch of a superconducting single electron transistor as a function of gate charge, temperature, and magnetic field. At low temperature and magnetic field, the switching current goes from a minimum to a maximum when the gate charge is varied from 0 to e, as expected for an island in the ground state with an even electron number. When the odd electron number ground state becomes populated by an increase of temperature or field, the Josephson tunneling is strongly suppressed, in agreement with theoretical predictions.
In a system where two small-area (100 nm x 100 nm) superconducting tunnel junctions are connected in series, the Josephson effect which tends to impose the phase competes with the charging effects in the central electrode (the of the device) which tend to set the charge of the island. By applying a voltage on an electrode capacitively coupled to the island (the electrode) one can arbitrate this competition in favour of either effect. This is can be seen in particular on the supercurrent which can flow through the junctions : it is modulated periodically by the gate voltage (hence the name of given to the system). This modulation shows sharp peaks when two charge states of the island are degenerate with respect to the electrostatic energy. The system is then in a state which has no classical description : it is in a coherent superposition of states. In this thesis we demonstrate experimentally the behaviour of this transistor and we analyse the theoretical and practical problems which can prevent the observation of the coherent superposition of states through the modulation of the supercurrent. In particular we show that the parity of the electron number in the island must be rigorously controlled and that the impedance connected to the circuit plays a crucial role in setting the magnitude of the measured supercurrent.
In a system where two small-area (100 nm x 100 nm) superconducting tunnel junctions are connected in series, the Josephson effect which tends to impose the phase competes with the charging effects in the central electrode (the "island" of the device) which tend to set the charge of the island. By applying a voltage on an electrode capacitively coupled to the island (the "gate" electrode) one can arbitrate this competition in favour of either effect. This is can be seen in particular on the supercurrent which can flow through the junctions : it is modulated periodically by the gate voltage (hence the name of "transistor" given to the system). This modulation shows sharp peaks when two charge states of the island are degenerate with respect to the electrostatic energy. The system is then in a state which has no classical description : it is in a coherent superposition of states. In this thesis we demonstrate experimentally the behaviour of this transistor and we analyse the theoretical and practical problems which can prevent the observation of the coherent superposition of states through the modulation of the supercurrent. In particular we show that the parity of the electron number in the island must be rigorously controlled and that the impedance connected to the circuit plays a crucial role in setting the magnitude of the measured supercurrent.
We show that charge transfer through a small superconducting (S) island of a single-electron transistor is strongly affected by vorticity. This interplay of charge and rotational degrees of freedom in a mesoscopic superconductor occurs through the effect of vorticity on the quantum mechanical spectrum of electron-hole excitations. The subgap quasiparticle levels in vortices can host an extra electron, thus suppressing the so-called parity effect in the S island. We propose to measure the collective dynamics of vorticity and electric charge via the charge pumping effect caused by alternating vortex entry and exit controlled by a periodic magnetic field.
We report a first direct observation of proximity supercurrent in a single InAs self-assembled quantum dot coupled to superconducting electrodes. We utilize large SAQDs with strong dot-lead coupling allowing sufficient overlap of quantized state that charge fluctuation in the dot may exceed one electron. Although the charging energy is larger than the superconductivity gap, Δ, the voltage characteristic measured in the current-driven four-terminal geometry signifies a supercurrent flow though the dot. The observed critical current is of the order of 10 pA, and much smaller than expected from theory. This current also shows the parity effect with the number of electrons in the dot, suggesting that the singlet correlation impedes the Cooper pair tunneling.
Abstract A single Cooper-pair transistor (SCPT) can work as a fast supercurrent switch. However, a direct combination of an SCPT with other superconducting-electronics circuits is not easy because of the smallness of the switchable supercurrent with it. In this work, scalability of the supercurrent that can be modulated with an SCPT structure is studied using multiple SCPTs connected in parallel having a common gate electrode. It is found that the magnitude of the maximum supercurrent is scaled up almost linearly with the increase in the number of SCPTs, N , and that it is modulated with the gate voltage as in the case for a single SCPT. The modulability, however, decreases with the increase in N , which is demonstrated to be mostly because of the charge-state fluctuations of either islands of the constituent SCPTs caused by the capacitive coupling among them. A practically possible method of improving the modulability is also discussed.