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Springer proceedings in physics

A Compact High-T c RF-SQUID System with Reduced Tank Circuit Damping

Yi Zhang, Christoph Heiden

Published Jan 1, 1992• 1 citation
Publisher
DOI
10.1007/978-3-642-77457-7_14

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Characteristics of a lumped element L-C tank circuit resonator of high-Tc rf-SQUIDs, which plays an important role in the device operation, have been experimentally investigated, according to the corresponding simulations obtained by COMSOL Multiphysics. We experimentally investigated the characteristics of the resonators by measuring their scattering parameters, as well as evaluating the rf-SQUID signal. Our SQUIDs are made of sputtered YBCO thin films with 3-mm-diameter washer areas. Different configurations of the resonator are investigated, and it is observed that, by increasing the thickness of the dielectric in a specific range, the reflection coefficient (S11) increases. For the experimental verifications, we constructed resonators with different dielectric thicknesses and different configurations. The resonators are made of a dielectric board with a hole in its middle to hold the inductors for close coupling to the SQUID mounted on the backside. An increase in the thickness of the dielectric board confines the RF field distribution close to the SQUID, while also making further distance between the contact pads and the SQUID reducing their parasitic effects on the device signal. This is observed to improve the stability of the operating point of the SQUIDs, while also reducing the noise for measured frequency range of 0.1 to 100 Hz.
An interactive graphics simulation program for the RF-SQUID (superconducting quantum interference device) has been developed. The program allows the user to graphically observe fluxoid quantization, the amplitude-limiting effect of the tank circuit voltage due to the SQUID coupling, the periodic voltage response due to an external DC flux, the tank circuit and SQUID voltage versus time, and the tank circuit voltage versus current. Having a graphical user interface, the program also provides a means for changing circuit and SQUID parameters, namely, RF drive, DC bias, coupling, tuning, Q, and critical current.>
A simple method is developed for analysis of the RF SQUID in regime, where the bias frequency ω is comparable to the natural R/L frequency of the SQUID ring. The input impedance of the RF SQUID is calculated for various values of the parametersq = \omega L/R\leq \leq \pi/4, signal frequency and detuning of the rf bias frequency from tank circuit resonant frequency. It is shown, that both the input resistance and the input inductance may be positive or negative. Measurement of the real part of the input impedance of a hysteretic RF SQUID are described. The experimental data are in qualitative agreement with the prediction of the theory.