Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

arXiv:2610.16468

Deterministic positioning accuracy of B centers in hBN by electron irradiation

A. Núñez Marcos, C. Arnold, J. Barjon, S. Buil, J. -P. Hermier, A. Delteil

cond-mat.otherquant-phSubmitted Oct 12, 2026• Announced Oct 13, 2026
arXivHTMLPDF

Abstract

Hexagonal boron nitride (hBN) is a promising material platform for quantum technologies, enabling both the realization of nanophotonic devices and the hosting of point defects that act as high-quality single-photon emitters (SPEs). Among these defects, B centers, which reproducibly emit at 436 nm, can be generated individually at predefined positions using electron beam irradiation, a crucial capability for top-down quantum photonics. Yet, the spatial accuracy of emitter creation strongly conditions the potential applications. Here, we generate arrays of individual B centers in a scanning electron microscope (SEM) with in-situ cathodoluminescence (CL) monitoring. We characterize the sources of random deviations from the target positions to identify the limitations to their deterministic positioning. In particular, we measure the distance between the electron beam and the emitter at the moment the emitter is created based on CL mapping. This approach provides a direct estimation of the spatial extent of the beam-emitter interaction. We find this contribution to be the main constraint to the emitter fabrication accuracy, yielding a standard deviation of 27 nm. Additional contributions, primarily from the finite density of UV-emitting carbon dimer precursors, increase the overall positional standard deviation to 40 nm. Our results highlight the possible improvements to the B center creation technique to reach sub-10 nm accuracy.

Related papers

Deterministic generation of single B centers in hBN by one-to-one conversion from UV centers

Andrés Núñez Marcos, Christophe Arnold, Julien Barjon +3 more

Among the variety of quantum emitters in hexagonal boron nitride (hBN), blue-emitting color centers, or B centers, have gathered a particular interest owing to their excellent quantum optical properties. Moreover, the fact that they can be locally activated by an electron beam makes them suitable for top-down integration in photonic devices. However, in the absence of a real-time monitoring technique sensitive to individual emitters, the activation process is stochastic in the number of emitters, and its mechanism is under debate. Here, we implement an in-situ cathodoluminescence monitoring setup capable of detecting individual quantum emitters in the blue and ultraviolet (UV) range. We demonstrate that the activation of individual B centers is spatially and temporally correlated with the deactivation of individual UV centers emitting at 4.1 eV, which are ubiquitous in hBN. We then make use of the ability to detect individual B center activation events to demonstrate the controlled creation of an array with only one emitter per irradiation site. Additionally, we demonstrate a symmetric technique for heralded selective deactivation of individual emitters. Our results provide insights into the microscopic structure and activation mechanism of B centers, as well as versatile techniques for their deterministic integration.

cond-mat.otherCross-listedarXiv:2511.02465•Nov 5, 2025

Insights into the Nature of Quantum Emitters in Electron-Irradiated hexagonal Boron Nitride

Mouli Hazra, Anna Rupp, Mohammad N. Mishuk +10 more

Quantum emitters in hexagonal boron nitride (hBN) have emerged as a promising solid-state platform for quantum technology applications. However, a persistent challenge in the field is the unclear origin of many observed emission lines, particularly in the visible range, which can be difficult to distinguish from signals arising from organic or process-induced contamination during sample preparations and handling. This ambiguity limits both the reproducibility of emitter generation and the reliable identification of truly intrinsic quantum defects. This work provides a step-by-step framework to assess whether quantum emitters in electron-irradiated hBN are associated with organic contaminants introduced during sample preparation. We employ hyperspectral imaging, thermal annealing, and oxygen plasma etching to investigate the origin of the green-yellow emitters in electron-irradiated hBN. The combined results not only rule out organic contamination as the source of emission but also provide insight into the spectral variability, thermal stability, and vertical localization of the emitters generated in electron-irradiated hBN that was created without any pre- or post-processing. In addition, our experiments demonstrate the feasibility of creating stable emitters in hBN with thicknesses below 10 nm. These findings provide practical guidance for the identification and controlled implementation of hBN-based single-photon emitters in quantum photonic devices.

physics.opticsCross-listedarXiv:2605.12663•May 14, 2026

Pulsed coherent spectroscopy of a quantum emitter in hexagonal Boron Nitride

Jake Horder, Hugo Quard, Kenji Watanabe +3 more

Defects in solid-state systems constitute a promising platform for the realization of deterministic quantum emitters. Among many candidate materials and emitters, point defects in hexagonal Boron Nitride (hBN) have recently emerged as particularly promising. In this work, we probe the coherence of an individual B center with a zero phonon line at 436 nm, under pulsed resonant excitation. We observe power-dependent Rabi oscillations up to 5π, demonstrating optical coherent control of the transition. We achieve an excellent single photon purity of 93% at π-pulse. Furthermore, we probe the coherence of the two-level system using Ramsey interferometry, revealing an inhomogeneous coherence time of T_2*=0.60 ns. These results establish B centers in hBN as viable candidates for triggered, coherent quantum emitters and represent an important step towards their integration into quantum photonic platforms.

quant-pharXiv:2602.18096•Feb 23, 2026•0 citations

Correlating spin and optical properties of quantum emitters in hBN

Nika Teran, Benjamin Whitefield, Nicholas Sloane +3 more

Optically addressable spin defects in hexagonal boron nitride (hBN) are well suited for near-surface quantum sensing. They offer bright, wavelength-tunable single-photon emission with high optically detected magnetic resonance (ODMR) contrast at room temperature. Here we controllably synthesise a high density of spin-complex defects in carbon-doped hBN flakes. We find that the zero-field splitting parameter D is directly correlated with the zero-phonon line of an emitter, while the ODMR contrast shows no such correlation. We further analyse an individual narrowband defect showing 68% ODMR contrast and enhance its photon collection by ~40% using a solid immersion lens. By advancing both the practical synthesis of the spin complexes and the understanding of their microscopic origin, our results move us toward the deterministic creation of ODMR-active quantum emitters

quant-pharXiv:2608.03090•Aug 5, 2026

Coherent State Manipulation of Single Hexagonal Boron Nitride Quantum Emitters

Johann A. Preuß, Daniel Groll, Robert Schmidt +6 more

Single-photon sources are crucial components for building quantum networks and communications, but their optical coherent control remains a significant challenge in the development of quantum technologies. Recently, single-photon sources in atomically thin 2D materials such as transition metal dichalcogenides and van der Waals materials have emerged as promising solid-state quantum light emitters [1]. Hexagonal boron nitride (hBN) is a 2D insulator, which hosts optically active states in its band gap that efficiently emit single photons even at room temperature. The wide range of emission wavelengths, narrow emission lines, and convenient tunability of these hBN emitters make them particularly interesting for quantum sensing and wavelength division multiplexed quantum communications. They can also be found in commercially available nanocrystals, making them ideal for creating large arrays of single-photon emitters [2] and efficient coupling to photonic structures, such as 3D-printed microlenses [3].

Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)•Jun 26, 2023•0 citations

Cooperative Emission from Quantum Emitters in Hexagonal Boron Nitride Layers

Igor Khanonkin, Amir Sivan, Le Liu +5 more

Collective light emission from many-body quantum systems is a cornerstone of quantum optics, yet its implementation in solid-state platforms operating under ambient conditions remains highly challenging. Large-bandgap van der Waals materials such as hexagonal boron nitride (hBN) host stable room-temperature single-photon emitters with narrow linewidths across a broad spectral range. However, cooperative radiative effects in this system have not been previously explored. Here we demonstrate collective emission from quantum-emitter ensembles in hBN layers when the emitters are nearly indistinguishable and positioned within a sub-wavelength proximity. Using confocal microscopy and a Hanbury Brown-Twiss (HBT) configuration, we identify both isolated emitters and ensembles activated by localized electron-beam irradiation. Time-resolved photoluminescence measurements reveal a superlinear intensity enhancement and a pronounced acceleration of the radiative decay in tightly confined ensembles, with lifetimes approaching the temporal resolution of our experimental system (about 500 ps), compared to approximately 1.85 ns for single emitters or large, spatially extended ensembles. Complementary second-order photon-correlation measurements exhibit sub-Poissonian antidip consistent with emission from a few indistinguishable emitters. The simultaneous observation of lifetime shortening and enhanced emission provides direct evidence of cooperative emission at room temperature, achieved without optical cavities or cryogenic cooling. These results establish optically active defect ensembles in hBN as a scalable solid-state platform for engineered collective quantum optics in two-dimensional materials, opening avenues toward ultrabright superradiant light sources and nonclassical photonic states for quantum technologies.

quant-pharXiv:2601.21544•Jan 30, 2026
Hexagonal boron nitride (hBN) is a promising material platform for quantum technologies, enabling both the realization of nanophotonic devices and the hosting of point defects that act as high-quality single-photon emitters (SPEs). Among these defects, B centers, which reproducibly emit at 436 nm, can be generated individually at predefined positions using electron beam irradiation, a crucial capability for top-down quantum photonics. Yet, the spatial accuracy of emitter creation strongly conditions the potential applications. Here, we generate arrays of individual B centers in a scanning electron microscope (SEM) with in-situ cathodoluminescence (CL) monitoring. We characterize the sources of random deviations from the target positions to identify the limitations to their deterministic positioning. In particular, we measure the distance between the electron beam and the emitter at the moment the emitter is created based on CL mapping. This approach provides a direct estimation of the spatial extent of the beam-emitter interaction. We find this contribution to be the main constraint to the emitter fabrication accuracy, yielding a standard deviation of 27 nm. Additional contributions, primarily from the finite density of UV-emitting carbon dimer precursors, increase the overall positional standard deviation to 40 nm. Our results highlight the possible improvements to the B center creation technique to reach sub-10 nm accuracy.
Among the variety of quantum emitters in hexagonal boron nitride (hBN), blue-emitting color centers, or B centers, have gathered a particular interest owing to their excellent quantum optical properties. Moreover, the fact that they can be locally activated by an electron beam makes them suitable for top-down integration in photonic devices. However, in the absence of a real-time monitoring technique sensitive to individual emitters, the activation process is stochastic in the number of emitters, and its mechanism is under debate. Here, we implement an in-situ cathodoluminescence monitoring setup capable of detecting individual quantum emitters in the blue and ultraviolet (UV) range. We demonstrate that the activation of individual B centers is spatially and temporally correlated with the deactivation of individual UV centers emitting at 4.1 eV, which are ubiquitous in hBN. We then make use of the ability to detect individual B center activation events to demonstrate the controlled creation of an array with only one emitter per irradiation site. Additionally, we demonstrate a symmetric technique for heralded selective deactivation of individual emitters. Our results provide insights into the microscopic structure and activation mechanism of B centers, as well as versatile techniques for their deterministic integration.
Quantum emitters in hexagonal boron nitride (hBN) have emerged as a promising solid-state platform for quantum technology applications. However, a persistent challenge in the field is the unclear origin of many observed emission lines, particularly in the visible range, which can be difficult to distinguish from signals arising from organic or process-induced contamination during sample preparations and handling. This ambiguity limits both the reproducibility of emitter generation and the reliable identification of truly intrinsic quantum defects. This work provides a step-by-step framework to assess whether quantum emitters in electron-irradiated hBN are associated with organic contaminants introduced during sample preparation. We employ hyperspectral imaging, thermal annealing, and oxygen plasma etching to investigate the origin of the green-yellow emitters in electron-irradiated hBN. The combined results not only rule out organic contamination as the source of emission but also provide insight into the spectral variability, thermal stability, and vertical localization of the emitters generated in electron-irradiated hBN that was created without any pre- or post-processing. In addition, our experiments demonstrate the feasibility of creating stable emitters in hBN with thicknesses below 10 nm. These findings provide practical guidance for the identification and controlled implementation of hBN-based single-photon emitters in quantum photonic devices.
Defects in solid-state systems constitute a promising platform for the realization of deterministic quantum emitters. Among many candidate materials and emitters, point defects in hexagonal Boron Nitride (hBN) have recently emerged as particularly promising. In this work, we probe the coherence of an individual B center with a zero phonon line at 436 nm, under pulsed resonant excitation. We observe power-dependent Rabi oscillations up to 5π, demonstrating optical coherent control of the transition. We achieve an excellent single photon purity of 93% at π-pulse. Furthermore, we probe the coherence of the two-level system using Ramsey interferometry, revealing an inhomogeneous coherence time of T_2*=0.60 ns. These results establish B centers in hBN as viable candidates for triggered, coherent quantum emitters and represent an important step towards their integration into quantum photonic platforms.
Optically addressable spin defects in hexagonal boron nitride (hBN) are well suited for near-surface quantum sensing. They offer bright, wavelength-tunable single-photon emission with high optically detected magnetic resonance (ODMR) contrast at room temperature. Here we controllably synthesise a high density of spin-complex defects in carbon-doped hBN flakes. We find that the zero-field splitting parameter D is directly correlated with the zero-phonon line of an emitter, while the ODMR contrast shows no such correlation. We further analyse an individual narrowband defect showing 68% ODMR contrast and enhance its photon collection by ~40% using a solid immersion lens. By advancing both the practical synthesis of the spin complexes and the understanding of their microscopic origin, our results move us toward the deterministic creation of ODMR-active quantum emitters
Single-photon sources are crucial components for building quantum networks and communications, but their optical coherent control remains a significant challenge in the development of quantum technologies. Recently, single-photon sources in atomically thin 2D materials such as transition metal dichalcogenides and van der Waals materials have emerged as promising solid-state quantum light emitters [1]. Hexagonal boron nitride (hBN) is a 2D insulator, which hosts optically active states in its band gap that efficiently emit single photons even at room temperature. The wide range of emission wavelengths, narrow emission lines, and convenient tunability of these hBN emitters make them particularly interesting for quantum sensing and wavelength division multiplexed quantum communications. They can also be found in commercially available nanocrystals, making them ideal for creating large arrays of single-photon emitters [2] and efficient coupling to photonic structures, such as 3D-printed microlenses [3].
Collective light emission from many-body quantum systems is a cornerstone of quantum optics, yet its implementation in solid-state platforms operating under ambient conditions remains highly challenging. Large-bandgap van der Waals materials such as hexagonal boron nitride (hBN) host stable room-temperature single-photon emitters with narrow linewidths across a broad spectral range. However, cooperative radiative effects in this system have not been previously explored. Here we demonstrate collective emission from quantum-emitter ensembles in hBN layers when the emitters are nearly indistinguishable and positioned within a sub-wavelength proximity. Using confocal microscopy and a Hanbury Brown-Twiss (HBT) configuration, we identify both isolated emitters and ensembles activated by localized electron-beam irradiation. Time-resolved photoluminescence measurements reveal a superlinear intensity enhancement and a pronounced acceleration of the radiative decay in tightly confined ensembles, with lifetimes approaching the temporal resolution of our experimental system (about 500 ps), compared to approximately 1.85 ns for single emitters or large, spatially extended ensembles. Complementary second-order photon-correlation measurements exhibit sub-Poissonian antidip consistent with emission from a few indistinguishable emitters. The simultaneous observation of lifetime shortening and enhanced emission provides direct evidence of cooperative emission at room temperature, achieved without optical cavities or cryogenic cooling. These results establish optically active defect ensembles in hBN as a scalable solid-state platform for engineered collective quantum optics in two-dimensional materials, opening avenues toward ultrabright superradiant light sources and nonclassical photonic states for quantum technologies.