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arXiv:2610.04821

Epitaxial NbN-junction-based self-shunted superconducting flux qubit with high anharmonicity

Tokunoshin Uchida, Shingo Nozaki, Daiki Kurihara, Hiroki Kutsuma, Shotaro Shirai, Atsushi Noguchi, Hirotaka Terai, Taro Yamashita

quant-phcond-mat.supr-conSubmitted Oct 4, 2026• Announced Oct 6, 2026• 0 citations
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Abstract

We report a demonstration of a self-shunted superconducting flux qubit (SSFQ) as an ultracompact, strongly anharmonic, and long-lifetime qubit by using the full epitaxially grown NbN/AlN/NbN Josephson junctions. The NbN-junction-based SSFQ achieved a high anharmonicity of 797 MHz as well as drastically reduced footprint of the qubit compared to capacitively shunted (C-shunt) flux qubits with a large shunt capacitor. The lifetime of the SSFQ reached 13 - 25 $μ$s, which is comparable to or relatively higher than that of NbN-based C-shunt flux qubits and Al-based flux qubits with more than 10 times smaller junctions. This indicates that the large epitaxial NbN-based junction can be adopted for SSFQ as well as merged-element transmon with the relatively large junctions. The results presented in this work will offer a new choice of the scalable qubits as well as the material platform toward the realization of large-scale superconducting quantum computers.

Comments
14 pages, 6 figures

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We report a demonstration of a self-shunted superconducting flux qubit (SSFQ) as an ultracompact, strongly anharmonic, and long-lifetime qubit by using the full epitaxially grown NbN/AlN/NbN Josephson junctions. The NbN-junction-based SSFQ achieved a high anharmonicity of 797 MHz as well as drastically reduced footprint of the qubit compared to capacitively shunted (C-shunt) flux qubits with a large shunt capacitor. The lifetime of the SSFQ reached 13 - 25 μμμs, which is comparable to or relatively higher than that of NbN-based C-shunt flux qubits and Al-based flux qubits with more than 10 times smaller junctions. This indicates that the large epitaxial NbN-based junction can be adopted for SSFQ as well as merged-element transmon with the relatively large junctions. The results presented in this work will offer a new choice of the scalable qubits as well as the material platform toward the realization of large-scale superconducting quantum computers.
We proposed and theoretically investigated the self-shunted superconducting flux qubits (SSFQs) with relatively large Josephson junctions with the diameter over1  μm\text{1}\; \mu \text{m}1μm. Because of the large self-capacitance of several 10 fF in the junctions, the large shunt capacitor with dimensions of several 100$ \mu \text{m}oftheconventionalcapacitivelyshuntedfluxquantumbits(qubits)canbeeliminated,resultinginsignificantreductionofthefootprint.WesystematicallycalculatedtheSSFQperformances,suchastheanharmonicity,andinvestigatedtheirdependencesonthecircuitparameters.Asaresult,itwasshownthattheSSFQshavethelargeanharmonicityof400–2000MHzforthereasonableparameters,suchasthelargejunctionareaofaround1of the conventional capacitively shunted flux quantum bits (qubits) can be eliminated, resulting in significant reduction of the footprint. We systematically calculated the SSFQ performances, such as the anharmonicity, and investigated their dependences on the circuit parameters. As a result, it was shown that the SSFQs have the large anharmonicity of 400–2000 MHz for the reasonable parameters, such as the large junction area of around 1oftheconventionalcapacitivelyshuntedfluxquantumbits(qubits)canbeeliminated,resultinginsignificantreductionofthefootprint.WesystematicallycalculatedtheSSFQperformances,suchastheanharmonicity,andinvestigatedtheirdependencesonthecircuitparameters.Asaresult,itwasshownthattheSSFQshavethelargeanharmonicityof400–2000MHzforthereasonableparameters,suchasthelargejunctionareaofaround1 \mu \text{m}^{2}andthesmallcriticalcurrentdensityofaround10and the small critical current density of around 10andthesmallcriticalcurrentdensityofaround10\text{A/cm}^{2}$. Furthermore, we derived and estimated the relative relaxation time of the SSFQs due to the charge and flux noises. As a result, we found that the high anharmonicity over 800 MHz could be achieved without degrading the relaxation time from that of the high-coherence flux qubits. The SSFQs offer the new choice of the highly scalable qubits, which achieve both the small footprint and high anharmonicity.
In an effort to eliminate the intrinsic noise sources that contained within the superconducting qubit circuits, we successfully fabricate superconducting flux qubit circuits (rf SQUID) with full epitaxially grown NbN/AlN/NbN tunnel junctions. The temperature dependent of magnetic flux shift has been investigated by using a NbN/AlN/NbN dc SQUID magnetometer in the temperature range from 20 mK to 2.5 K. Our results show that the shift of the magnetic flux is in the level of ∼1 mF 0 during the experiment.
We demonstrate superconducting qubits using epitaxially grown Josephson junctions. A fully epitaxial NbN/AlN/NbN trilayer on MgO (100) substrate is processed by photolithography and dry-etching into transmon qubits with a large Josephson energy. The tunnel barrier made of cubic-phase AlN, rather than the ordinary hexagonal phase, is the key to avoid piezoelectric coupling to the phonon bath. The energy-relaxation time and the spin-echo decay time of ∼500 ns are observed in the qubits that are coupled to a monolithically made coplanar waveguide resonator.
While quantum computation has the potential to revolutionize the scientific community, to date no architecture has been developed which offers the necessary combination of high coherence times and massive scalability. Superconducting flux qubits satisfy the second requirement well but to date useful devices are limited to coherence times of typically only a few &mus. In this dissertation we examine the possibilities of improving the coherence performance of the flux qubit to the levels required for fault-tolerant quantum computation. We find that coherence times for many devices are limited by photon-induced quasiparticles and mitigation of these quasiparticles increases coherence times by more than a factor of two. Beyond this, however, we find little improvement in flux qubit performance compared to prior results. Despite improved fabrication techniques and varied device designs we find flux qubit coherence times are still typically below 5 &mus. Furthermore, wide device-to-device variations are observed which prevent effective scaling of the flux qubit to quantum information circuits.Based on the proposal by You, et al. we develop of a capacitively-shunted version of the flux qubit called the C-shunt flux qubit. With the addition of a capacitive shunt across the small junction of the flux qubit we are able to reduce the amplitude sensitivity to both charge and flux noise by more than a factor of three. The result is a predicted ten-fold enhancement in the coherence times compared to the unshunted flux qubit. At the same time we preserve much of the anharmonicity of the flux qubit resulting in a device with coherence times comparable to modern transmons but with a factor of four better anharmonicity and more flexible coupling configurations.By using a high-quality MBE aluminum shunt process on an annealed sapphire substrate coupled with a more conventional electron-beam-evaporated aluminum Josephson junction process we fabricate hybrid C-shunt flux qubits. We also incorporate a new bridgeless junction technique which offers more robust and repeatable fabrication processing. This technique enables improved accuracy of the junction sizing, a trait which will become essential as we move to multi-qubit experiments. T1 and T2 times for these C-shunt devices reach in excess of 40 &mus at degeneracy, achieving the predicted ten-fold improvement based on the reduced noise sensitivity. At the same time we see decreased device-to-device variation with typical T1 times exceeding 20&ndash25 &mus at all bias points. Combined with the high anharmonicity and standard planar fabrication techniques these coherence times make the C-shunt flux qubit a competitive candidate for fault-tolerant quantum computation.
We demonstrate high-fidelity single-qubit gates on a C-shunt flux qubit that simultaneously combines a large anharmonicity (A/2π=848 MHz\mathcal{A}/2π=848~\mathrm{MHz}A/2π=848 MHz) with long relaxation time (T1=23 μsT_1 = 23~μ\text{s}T1​=23 μs). The large anharmonicity significantly suppresses leakage to higher energy levels, enabling fast and precise microwave control. Using DRAG pulses and randomized benchmarking, the qubit achieves gate fidelities exceeding 99.9\%, highlighting the capability of C-shunt flux qubits for robust and high-performance quantum operations. These results establish them as a promising platform for scalable quantum information processing.
Abstract We report on the electrical properties of NbN/TaN/NbN Josephson junctions grown on thermally oxidized silicon substrates, along with the design and fabrication of superconducting single-flux-quantum (SFQ) circuits based on these NbN superconductor/normal metal/superconductor (SNS) junctions. The critical current density ( J c ) of the junctions was found to be relatively sensitive to the barrier thickness, decreasing from 108.0 ± 8.1 kA cm −2 for a 15 nm barrier to 12.8 ± 1.9 kA cm −2 for a 30 nm barrier. For a J c of approximately 24.5 ± 2.1 kA cm −2 and a barrier thickness of 25 nm, the NbN SNS junctions are self-shunted and exhibit nonhysteretic current–voltage ( I – V ) characteristics. Especially for junctions with diameter ( φ ) ranging from 0.8 to 1.6 μ m, their critical current ( I c ) falls within the range of 110–450 μ A, making them suitable for SFQ circuits. By considering the impact of excess current and incorporating it as an additional term in the conventional resistively and capacitively shunted junction model, the I – V curves of NbN SNS junctions can be precisely described, successfully minimizing the deviation between simulations and test results. The DC-SFQ and SFQ-DC interface circuits can both operate normally, and the bias margins of cell circuits such as Josephson transmission line, confluence buffer, D flip-flop, and splitter are greater than 40%. Compared to Nb superconductor/insulator/superconductor junctions, their self-shunting characteristics and relatively thick 25 nm barriers can also enhance the integration of circuits and increase the yield to complex circuits.