Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

arXiv:2609.20137

Electrostatic Stabilization of Near-Surface Quantum Sensors via Dielectric Interface Engineering

Atharva Paranjape, Kathrin Küster, Olga Shevstova, Lisa Ebo, Toni Hache, Klaus Kern, Rainer Stöhr, Jörg Wrachtrup, Aparajita Singha

quant-phSubmitted Sep 17, 2026• Announced Sep 18, 2026• 0 citations
arXivHTMLPDF

Abstract

Control of charge-state stability in near-surface quantum defects is critical for nanoscale sensing, yet remains particularly challenging under ultra-high vacuum (UHV), where surface-induced band bending destabilizes the metrologically relevant charge-state. Here, we present a robust and reproducible approach for stabilizing shallowly implanted (< 10 nm deep) nitrogen-vacancy (NV) centers in near-UHV conditions (P = $3 \times 10^{-9}$ mbar) based on dielectric interface engineering. Through measurements on individually addressable NV centers, we demonstrate that a TiO2 coating on the diamond suppresses surface-induced electrostatic fields, yielding a 79% increase n NV- population and a 45% enhancement in NV-spin resonance contrast at room temperature. Coherent control measurements further reveal suppressed charge-state conversion dynamics. These results establish dielectric screening as a powerful and reproducible strategy to engineer charge transition energetics of NV centers in scanning-probe-compatible geometries under extreme conditions.

Comments
24 pages, 5 figures

Related papers

Controlled Surface Modification to Revive Shallow NV – Centers

Jeffrey Neethirajan, Toni Hache, Domenico Paone +9 more

High Resolution Image Download MS PowerPoint Slide Near-surface negatively charged nitrogen vacancy (NV) centers hold excellent promise for nanoscale magnetic imaging and quantum sensing. However, they often experience charge-state instabilities, leading to strongly reduced fluorescence and NV coherence time, which negatively impact magnetic imaging sensitivity. This occurs even more severely at 4 K and ultrahigh vacuum (UHV, p = 2 × 10 –10 mbar). We demonstrate that in situ adsorption of H 2 O on the diamond surface allows the partial recovery of the shallow NV sensors. Combining these with band-bending calculations, we conclude that controlled surface treatments are essential for implementing NV-based quantum sensing protocols under cryogenic UHV conditions.

Nano Letters•Mar 16, 2023•34 citations

Charge state stabilization of shallow nitrogen vacancy centers in diamond by oxygen surface modification

Hayate Yamano, Sora Kawai, Kanami Kato +13 more

Abstract We investigated the charge state stability and coherence properties of near-surface single nitrogen vacancy (NV) centers in 12 C-enriched diamond for potential use in nanoscale magnetic field sensing applications. The stability of charge states in negatively charged NV centers (NV − ) was evaluated using one of the pulsed optically detected magnetic resonance measurements, Rabi oscillation measurements. During the accumulation of Rabi oscillations, an unstable shallow NV − was converted to a neutral state. As a result, the contrast of Rabi oscillations degraded, depending on charge state stability. We stabilized the NV − state of very shallow NV centers (∼2.6 ± 1.1 nm from the surface) created by 1.2 keV nitrogen ion implantation by diamond surface modification, UV/ozone exposure, and oxygen annealing. This improvement indicates that we can suppress the upward surface band bending and surface potential fluctuations through Fermi level pinning originating from oxygen-terminated diamond surfaces.

Japanese Journal of Applied Physics•Mar 23, 2017•69 citations

A coherence-protection scheme for quantum sensors based on ultra-shallow single nitrogen-vacancy centers in diamond

Anton Pershin, András Tárkányi, Vladimir Verkhovlyuk +2 more

High spatial resolution quantum sensing of near-surface nitrogen vacancy (NV) centers in diamond has enabled detection of magnetic, electrical, and thermal signals at the nanoscale. At depths of just a few nanometers, NV centers serve as localized quantum probes for external spins or low-dimensional materials, but their proximity to the surface also enhances decoherence caused by fluctuating nuclear spins. While advances in surface engineering have stabilized the charge state of NV centers at depths of tens of nanometers, achieving both ultra-shallow implantation (0.5-2 nm) and long-term spin coherence remains a central challenge. In this work, we show using first-principles modeling that, by exploiting the interaction of surface-induced strain and weak dc magnetic fields, the spin coherence times of 1-nm-deep NV centers can be greatly improved near the spin-phonon-confined regime at room temperature in 12C-rich diamonds. We also demonstrate that this protocol benefits ~ 10-nm-deep NV centers in natural diamond, enabling vector magnetometry at the nanoscale. Shallow NV centers in diamond are advantageous for quantum sensing but suffer from surface magnetic noise. Using first-principles simulations supported by experiments, the authors show that a combination of small magnetic fields and surface strain can significantly enhance spin coherence of 1 nm-deep NV centers.

arXiv:2501.00180•Nature Communications•Nov 6, 2025•9 citations

Spectrally stable near-surface implanted nitrogen vacancy centers in diamond and the role of surface proximity

Srivatsa Chakravarthi, Christian Pederson, Zeeshawn Kazi +2 more

Scalable realizations of quantum network technologies utilizing the nitrogen vacancy center in diamond require creation of optically coherent NV centers in close proximity to a surface for coupling to optical structures. We create single NV centers by $^{15}$N ion implantation and high-temperature vacuum annealing. Origin of the NV centers is established by optically detected magnetic resonance spectroscopy for nitrogen isotope identification. Near lifetime-limited optical linewidths ($<$ 60 MHz) are observed for the majority of the normal-implant (7$^\circ$, $\approx$ 100 nm deep) $^{15}$NV centers. Long-term stability of the NV$^-$ charge state and emission frequency is demonstrated. The effect of NV-surface interaction is investigated by varying the implantation angle for a fixed ion-energy, and thus lattice damage profile. In contrast to the normal implant condition, NVs from an oblique-implant (85$^\circ$, $\approx$ 20 nm deep) exhibit substantially reduced optical coherence. Our results imply that the surface is a larger source of perturbation than implantation damage for shallow implanted NVs. This work supports the viability of ion implantation for formation of optically stable NV centers. However, careful surface preparation will be necessary for scalable defect engineering.

•May 20, 2021•0 citations

Surface adsorbates suppress low-frequency noise for shallow nitrogen-vacancy centers

Zhiyang Yuan, David A. Fehr, Kalliope Zervas +5 more

Shallow nitrogen-vacancy (NV) centers in diamond are promising nanoscale quantum sensors, yet their coherence is strongly limited by surface-induced noise. Surface adsorbates are widely believed to be a major source of decoherence. Here, we test this assumption by characterizing shallow single NV centers under ultrahigh vacuum (UHV) conditions, where the diamond surface is kept free of adsorbates, and comparing their behavior to ambient conditions. Surprisingly, we observe a ~4x reduction in the Hahn echo coherence time T2 in UHV. By combining Hahn echo measurements in the single-quantum (SQ) and double-quantum (DQ) bases, we separate contributions from different noise sources and find that both electric and magnetic noise are enhanced in UHV. In contrast, T1 measurements reveal an increased DQ T1 in UHV, indicating suppressed electric field noise in the ~100 MHz frequency regime. These results point to a modification of the surface noise spectrum upon adsorbate removal, with different frequency regimes arising from distinct microscopic mechanisms. Specifically, we find that the low frequency noise is consistent with increased surface charge in UHV that can be compensated by surface adsorbates in ambient conditions. Our findings highlight a complex and previously underappreciated role of surface adsorbates in shaping the noise environment of shallow NV centers, with important implications for nanoscale quantum sensing.

quant-pharXiv:2608.01478•Aug 4, 2026•0 citations

Stability of Near-Surface Nitrogen Vacancy Centers Using Dielectric Surface Passivation

Ravi Kumar, Saksham Mahajan, Felix Donaldson +8 more

High Resolution Image Download MS PowerPoint Slide We study the photophysical stability of ensemble near-surface nitrogen vacancy (NV) centers in diamond under vacuum and air. The optically detected magnetic resonance contrast of the NV centers was measured following exposure to laser illumination, showing opposing trends in air compared to vacuum (increasing by up to 9% and dropping by up to 25%, respectively). Characterization using X-ray photoelectron spectroscopy (XPS) suggests a surface reconstruction: In air, atmospheric oxygen adsorption on a surface leads to an increase in NV – fraction, whereas in vacuum, net oxygen desorption increases the NV 0 fraction. NV charge state switching is confirmed by photoluminescence spectroscopy. Deposition of ∼2 nm alumina (Al 2 O 3 ) over the diamond surface was shown to stabilize the NV charge state under illumination in either environment, attributed to a more stable surface electronegativity. The use of an alumina coating on diamond is therefore a promising approach to improve the resilience of NV sensors.

arXiv:2311.14129•ACS Photonics•Feb 14, 2024•26 citations
Control of charge-state stability in near-surface quantum defects is critical for nanoscale sensing, yet remains particularly challenging under ultra-high vacuum (UHV), where surface-induced band bending destabilizes the metrologically relevant charge-state. Here, we present a robust and reproducible approach for stabilizing shallowly implanted (< 10 nm deep) nitrogen-vacancy (NV) centers in near-UHV conditions (P = 3×10−93 \times 10^{-9}3×10−9 mbar) based on dielectric interface engineering. Through measurements on individually addressable NV centers, we demonstrate that a TiO2 coating on the diamond suppresses surface-induced electrostatic fields, yielding a 79% increase n NV- population and a 45% enhancement in NV-spin resonance contrast at room temperature. Coherent control measurements further reveal suppressed charge-state conversion dynamics. These results establish dielectric screening as a powerful and reproducible strategy to engineer charge transition energetics of NV centers in scanning-probe-compatible geometries under extreme conditions.
High Resolution Image Download MS PowerPoint Slide Near-surface negatively charged nitrogen vacancy (NV) centers hold excellent promise for nanoscale magnetic imaging and quantum sensing. However, they often experience charge-state instabilities, leading to strongly reduced fluorescence and NV coherence time, which negatively impact magnetic imaging sensitivity. This occurs even more severely at 4 K and ultrahigh vacuum (UHV, p = 2 × 10 –10 mbar). We demonstrate that in situ adsorption of H 2 O on the diamond surface allows the partial recovery of the shallow NV sensors. Combining these with band-bending calculations, we conclude that controlled surface treatments are essential for implementing NV-based quantum sensing protocols under cryogenic UHV conditions.
Abstract We investigated the charge state stability and coherence properties of near-surface single nitrogen vacancy (NV) centers in 12 C-enriched diamond for potential use in nanoscale magnetic field sensing applications. The stability of charge states in negatively charged NV centers (NV − ) was evaluated using one of the pulsed optically detected magnetic resonance measurements, Rabi oscillation measurements. During the accumulation of Rabi oscillations, an unstable shallow NV − was converted to a neutral state. As a result, the contrast of Rabi oscillations degraded, depending on charge state stability. We stabilized the NV − state of very shallow NV centers (∼2.6 ± 1.1 nm from the surface) created by 1.2 keV nitrogen ion implantation by diamond surface modification, UV/ozone exposure, and oxygen annealing. This improvement indicates that we can suppress the upward surface band bending and surface potential fluctuations through Fermi level pinning originating from oxygen-terminated diamond surfaces.
High spatial resolution quantum sensing of near-surface nitrogen vacancy (NV) centers in diamond has enabled detection of magnetic, electrical, and thermal signals at the nanoscale. At depths of just a few nanometers, NV centers serve as localized quantum probes for external spins or low-dimensional materials, but their proximity to the surface also enhances decoherence caused by fluctuating nuclear spins. While advances in surface engineering have stabilized the charge state of NV centers at depths of tens of nanometers, achieving both ultra-shallow implantation (0.5-2 nm) and long-term spin coherence remains a central challenge. In this work, we show using first-principles modeling that, by exploiting the interaction of surface-induced strain and weak dc magnetic fields, the spin coherence times of 1-nm-deep NV centers can be greatly improved near the spin-phonon-confined regime at room temperature in 12C-rich diamonds. We also demonstrate that this protocol benefits ~ 10-nm-deep NV centers in natural diamond, enabling vector magnetometry at the nanoscale. Shallow NV centers in diamond are advantageous for quantum sensing but suffer from surface magnetic noise. Using first-principles simulations supported by experiments, the authors show that a combination of small magnetic fields and surface strain can significantly enhance spin coherence of 1 nm-deep NV centers.
Scalable realizations of quantum network technologies utilizing the nitrogen vacancy center in diamond require creation of optically coherent NV centers in close proximity to a surface for coupling to optical structures. We create single NV centers by 15^{15}15N ion implantation and high-temperature vacuum annealing. Origin of the NV centers is established by optically detected magnetic resonance spectroscopy for nitrogen isotope identification. Near lifetime-limited optical linewidths (<<< 60 MHz) are observed for the majority of the normal-implant (7∘^\circ∘, ≈\approx≈ 100 nm deep) 15^{15}15NV centers. Long-term stability of the NV−^-− charge state and emission frequency is demonstrated. The effect of NV-surface interaction is investigated by varying the implantation angle for a fixed ion-energy, and thus lattice damage profile. In contrast to the normal implant condition, NVs from an oblique-implant (85∘^\circ∘, ≈\approx≈ 20 nm deep) exhibit substantially reduced optical coherence. Our results imply that the surface is a larger source of perturbation than implantation damage for shallow implanted NVs. This work supports the viability of ion implantation for formation of optically stable NV centers. However, careful surface preparation will be necessary for scalable defect engineering.
Shallow nitrogen-vacancy (NV) centers in diamond are promising nanoscale quantum sensors, yet their coherence is strongly limited by surface-induced noise. Surface adsorbates are widely believed to be a major source of decoherence. Here, we test this assumption by characterizing shallow single NV centers under ultrahigh vacuum (UHV) conditions, where the diamond surface is kept free of adsorbates, and comparing their behavior to ambient conditions. Surprisingly, we observe a ~4x reduction in the Hahn echo coherence time T2 in UHV. By combining Hahn echo measurements in the single-quantum (SQ) and double-quantum (DQ) bases, we separate contributions from different noise sources and find that both electric and magnetic noise are enhanced in UHV. In contrast, T1 measurements reveal an increased DQ T1 in UHV, indicating suppressed electric field noise in the ~100 MHz frequency regime. These results point to a modification of the surface noise spectrum upon adsorbate removal, with different frequency regimes arising from distinct microscopic mechanisms. Specifically, we find that the low frequency noise is consistent with increased surface charge in UHV that can be compensated by surface adsorbates in ambient conditions. Our findings highlight a complex and previously underappreciated role of surface adsorbates in shaping the noise environment of shallow NV centers, with important implications for nanoscale quantum sensing.
High Resolution Image Download MS PowerPoint Slide We study the photophysical stability of ensemble near-surface nitrogen vacancy (NV) centers in diamond under vacuum and air. The optically detected magnetic resonance contrast of the NV centers was measured following exposure to laser illumination, showing opposing trends in air compared to vacuum (increasing by up to 9% and dropping by up to 25%, respectively). Characterization using X-ray photoelectron spectroscopy (XPS) suggests a surface reconstruction: In air, atmospheric oxygen adsorption on a surface leads to an increase in NV – fraction, whereas in vacuum, net oxygen desorption increases the NV 0 fraction. NV charge state switching is confirmed by photoluminescence spectroscopy. Deposition of ∼2 nm alumina (Al 2 O 3 ) over the diamond surface was shown to stabilize the NV charge state under illumination in either environment, attributed to a more stable surface electronegativity. The use of an alumina coating on diamond is therefore a promising approach to improve the resilience of NV sensors.