Deterministic nanofabrication for engineering nanowire quantum dot devices
Tarun Patel, Matteo Pennacchietti, Greg Holloway, Stephen R. Harrigan, Sayan Gangopadhyay, Anthony Drouin, Megha Jain, Dan Dalacu, Philip J. Poole, Sasan Vosoogh-Grayli, Michael E. Reimer
cond-mat.mes-hallquant-phSubmitted Sep 2, 2026• Announced Sep 4, 2026
Semiconductor quantum dots (QDs) are a leading platform for realising bright, wavelength-tunable sources of single and entangled photon pairs for photonic quantum technologies. Site-selected nanowire quantum dots (NWQDs) are a promising platform for fabricating such photonic devices in a scalable manner. However, implementing additional structures around the photonic nanowire while maintaining its vertical growth geometry has remained a challenge. In this work, we develop a deterministic pick-and-place technique to conduct a vertical-to-vertical transfer of NWQDs from the growth substrate to arbitrary templates. Using this transfer technique, we enhance the photon extraction efficiency to 75% by implementing a bottom gold mirror and tune the emission wavelength by 3.6 GHz via implementing electrostatic gates around the QD. Importantly, we measure low-multiphoton probability (g^(2)(0) = 0.002) and high indistinguishability (>80% for +/-100 ps) of the QD emission after the transfer process, yielding high-quality devices. These results demonstrate the repeatability and versatility of the developed transfer technique, which is an enabling step towards scalable single and entangled photon sources.
Semiconductor quantum dots (QDs) are a leading platform for realising bright, wavelength-tunable sources of single and entangled photon pairs for photonic quantum technologies. Site-selected nanowire quantum dots (NWQDs) are a promising platform for fabricating such photonic devices in a scalable manner. However, implementing additional structures around the photonic nanowire while maintaining its vertical growth geometry has remained a challenge. In this work, we develop a deterministic pick-and-place technique to conduct a vertical-to-vertical transfer of NWQDs from the growth substrate to arbitrary templates. Using this transfer technique, we enhance the photon extraction efficiency to 75% by implementing a bottom gold mirror and tune the emission wavelength by 3.6 GHz via implementing electrostatic gates around the QD. Importantly, we measure low-multiphoton probability (g^(2)(0) = 0.002) and high indistinguishability (>80% for +/-100 ps) of the QD emission after the transfer process, yielding high-quality devices. These results demonstrate the repeatability and versatility of the developed transfer technique, which is an enabling step towards scalable single and entangled photon sources.
The quick development of quantum technologies and quantum communication demands a continuous search for more efficient and with higher performance quantum sources and devices. In particular, quantum dots are firmly established sources of single photon emitters and entangled photon pairs, with entanglement of photons emitted by a single quantum dot probed in polarization[1], time-bin[2] and hyperentanglement[3]. Although spontaneous parametric down conversion sources (SPDC) are widely used as entangled photon sources with the highest values of entanglement[4], are being reached by quantum dot devices[5]. With similar quality as SPDC sources, QDs however stand out as sources with sub-Poissonian statistics, essential for safe quantum communication. Still, most of the quantum dots devices exhibit low extraction efficiencies. Attempts to maximize the extraction efficiency involve sophisticated engineered photonic systems[6,7]. Furthermore, the accurate alignment of the quantum dot-cavity system is crucial for an effective quantum dotcavity coupling and hence an emission enhancement into free space[8]. All of this implies the need of intricated nanofabrication processes. Here we present a simple, scalable photonic device that grants efficient creation of entangled photon pairs from InAs quantum dots. The device, spontaneously formed during the growth process, is based on pairs of bottom/top distributed bragg reflectors (DBRs). A propagating deformation in the DBRs, leads to the formation of self-aligned dimples on top of the QDs, resulting in a self-aligned quantum-dot cavity system[9]. Therefore, costly and complex deterministic nanofabrication techniques are not required. In this work, the device performance was characterized, showing experimental collection efficiencies of 0.17, with theoretically pair extraction efficiencies above 0.45. Furthermore, a Purcell enhancement up to 1.7 was obtained. Finally, the device potential to generate time-bin entangled photons was investigated performing state tomography measurements. The subsequent reconstruction of the density matrix yields a concurrence of 0.70(10) and a fidelity of 0.84(5).
Deterministic sources of entangled photon pairs and indistinguishable photons are expected to play a key role in photonic quantum technologies. Semiconductor quantum dots are promising candidates due to their on-demand emission and compatibility with nanophotonic structures. However, current implementations face trade-offs between extraction efficiency, Purcell enhancement, as well as charge noise that causes blinking and degrades indistinguishability. Here we demonstrate a tunable nano-optoelectronic device based on a quantum dot embedded in a p-i-n diode circular-Bragg-grating-resonator and featuring extraction efficiencies up to 0.55(6) and Purcell-factor of $\sim$8. The device generates wavelength-tunable entangled photon pairs with suppressed blinking and raw (corrected) concurrence > 0.89 (0.91) over a range of 1.6 nm. The very same source also emits single, nearly Fourier-limited and highly indistinguishable photons with raw (corrected) VHOM = 0.951(4) (0.988(6)). These results demonstrate a viable platform for semiconductor quantum photonics.
A bright source of on-demand entangled photons is needed for quantum networks. A single quantum dot in a site-selected nanowire waveguide is a promising candidate for realizing such sources. However, such sources are associated with poor single-photon indistinguishability, limiting their applicability in quantum networks. A common approach for enhancing the single-photon indistinguishability in quantum dot-based entangled photon sources is to implement a broadband optical cavity. Achieving a high-Purcell cavity while retaining the advantages of the nanowire, such as directional emission, a broad operational bandwidth, and high light extraction efficiency, has been a significant challenge. Here, we propose a nanowire cavity based on quasi-bound states in the continuum formed by the strong coupling of two resonant optical modes. We numerically predict this design to support a cavity mode with 4 nm bandwidth and a Purcell enhancement of $\sim$17. This cavity mode enables a directional far-field emission profile (88% overlap with a Gaussian) with a light extraction efficiency of $\sim$74%. Our solution opens up a route for generating entangled photon pairs with enhanced extraction efficiency and single-photon indistinguishability for the practical realization of quantum networks.
Optical quantum dots (QDs) are central to photonic quantum technologies, with fabrication approaches tailored to different spectral ranges. A key challenge, however, is the realization of a unified platform$\unicode{x2014}$a single growth method combined with a host material offering a designable architecture$\unicode{x2014}$enabling wavelength tunability across the full emission range and co-integration of multiple quantum dots. Here, we introduce AlGaAs nanowires as a universal host for GaAs, InGaAs, and InAs QDs. Building on our previous demonstration of high-quality GaAs QDs, we realize InGaAs QDs with tunable emission by varying the growth duration from 2 to 5 s, achieving emission at 780 and 920 nm. We further showcase the platform's versatility for multi-quantum-dot devices by co-integrating two InGaAs QDs, as well as GaAs and InGaAs QDs within a single nanowire. Finally, we initiate a first step toward pure InAs QDs by growing a pristine InAs segment on AlGaAs nanowires, demonstrating material compatibility.
Quantum dots embedded in semiconductor photonic nanowires (NW-QDs) can deterministically produce single-photons and entangled photon pairs at high repetition rates. These photons can be efficiently coupled from the photonic nanowire into free space or optical fibers thanks to the sharp tip of the nanowire, which provides impedance matching. However, precise control of the NW-QD emission frequency in a way that is reversible, does not degrade the properties of the emitted photons, and can be used independently for individual NW-QDs on the same chip has so far remained a challenge. Resolving this issue is crucial for applications when interfacing the photons with quantum systems that require MHz to sub-GHz precision, such as atomic ensembles acting as memories in a quantum network. Here, we demonstrate a reversible tuning method that can tune the emission frequency of a NW-QD by more than 300 GHz with sub-GHz precision. We achieve this through gas condensation that is then partially reversed with localized laser ablation. This process finely adjusts stress applied to the quantum dots, thereby tuning their emission frequency. We validate the precision and stability of this method by tuning the frequency of the emitted single-photons across an atomic resonance to probe its absorption and dispersion. We observed up to 80\% absorption of the single-photons from NW-QD in hot caesium vapour at the D1-line resonances and a 75-fold decrease in group velocity associated with the hyperfine transitions of the D1-line ground states. We observed no discernible effects in the second-order autocorrelation function, lifetime, or linewidth of the NW-QD emission for up to 300 GHz of tuning and we saw minimal effects on the fine structure splitting of the NW-QD when tuning up to 100 GHz.
Generating polarization entangled photon pairs from semiconductor quantum dots (QDs) is a desired feature for advanced quantum applications integrated with semiconductor technology, such as quantum cryptography and quantum teleportation, but has remained a technically challenging task for a long time, due to the inevitable and hardly controlled fine structure splitting (FSS) between the single-exciton doublets of QDs. Till recently, a conceptual and technological break- through was made by Trotta et al. to successfully remove the FSSs of QDs in an universal and deterministic manner, which points out the necessity of using at least two generic fields as tuning knobs for the FSS-elimination. Inspired by the progress, currently more attempt is to develop the quantum light emitting devices with versatile functionalities, such as electrical trigger of photon- pair emission or tunability of light-wavelength. In the sense, the use of two tuning knobs yet in turn impose a restriction to the versatility of devices that needs also additional tuning knobs for the functional operations. In this study, we carry out a theoretical and computation investigation of the excitonic FSSs of droplet-epitaxial (DE) GaAs/AlGaAs QDs controlled by piezoelectricity actuators. As a main of this work, we find that the number of the required tuning knobs for a deterministic generation of EPPs from asymmetric QDs actually can be reduced to be only one as long as the crystal symmetries of QD material and piezoelectricity actuator are compatible. As a feasible example, we show that the FSSs of asymmetric GaAs QDs can be certainly eliminated with a single bi-axial stress generated by (001) PMN-PT actuator that is, in the sense of symmetry, in coincidence with the zinc-blende crystal structure of QD.