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arXiv:2608.00372

Electrically Reconfigurable Silicon Carbide Nanophotonic Cavities on Thin-Film Lithium Niobate

San Lam Ng, Georgii Grechko, Vladislav Bushmakin, Rainer Stöhr, Vadim Vorobyov, Roman Kolesov, Jörg Wrachtrup

physics.opticsquant-phSubmitted Aug 1, 2026• Announced Aug 4, 2026
arXivHTMLPDF

Abstract

Interfacing integrated photonics with solid-state spin defects holds great promise for future quantum networks, but the scaling of spin-photon architectures is hindered by frequency mismatches arising from fabrication-induced variations in photonic cavity resonances and the inhomogeneous optical transition frequencies of individual spins. These challenges call for a photonic platform with deterministic and wide-range tunability. Here, we demonstrate a hybrid nanophotonic platform based on direct bonding of silicon carbide photonic crystal nanocavity arrays onto thin-film lithium niobate on insulator, enabling deterministic electrical tuning of multiple SiC nanocavities into mutual spectral resonance. By exploiting the strong electro-optic response of lithium niobate, we achieve continuous and wide-range cavity tuning of 380 GHz ($\sim$1.1 nm), sufficient to compensate both cavity disorder and spin inhomogeneity. The nanocavities balance strong optical confinement with electrical tunability, exhibiting a theoretical Purcell factor of approximately 400. This hybrid platform enables electrically reconfigurable spin-photon interfaces for large-scale integrated quantum photonics.

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Interfacing integrated photonics with solid-state spin defects holds great promise for future quantum networks, but the scaling of spin-photon architectures is hindered by frequency mismatches arising from fabrication-induced variations in photonic cavity resonances and the inhomogeneous optical transition frequencies of individual spins. These challenges call for a photonic platform with deterministic and wide-range tunability. Here, we demonstrate a hybrid nanophotonic platform based on direct bonding of silicon carbide photonic crystal nanocavity arrays onto thin-film lithium niobate on insulator, enabling deterministic electrical tuning of multiple SiC nanocavities into mutual spectral resonance. By exploiting the strong electro-optic response of lithium niobate, we achieve continuous and wide-range cavity tuning of 380 GHz (∼\sim∼1.1 nm), sufficient to compensate both cavity disorder and spin inhomogeneity. The nanocavities balance strong optical confinement with electrical tunability, exhibiting a theoretical Purcell factor of approximately 400. This hybrid platform enables electrically reconfigurable spin-photon interfaces for large-scale integrated quantum photonics.
Functional electro-optic (EO) tunable photonic integrated circuits are crucial to next-generation information processing and advanced computing, where ferroelectric materials such as lithium niobate (LiNbO3) provide outstanding optical properties and versatile tuning mechanisms. However, beyond achieving high-performance devices, practical deployment of LiNbO3 photonic integrated circuits requires rapid and cost-effective scale-up, which remains challenging because of the fabrication complexity and high costs of ion-sliced thin-film lithium niobate and wafer bonding processes. To address this gap, we demonstrate a fully monolithic photonic platform, amorphous silicon carbide (a-SiC) on bulk LiNbO3 crystal substrate, enabling scalable, CMOS-compatible, low-cost, and high-density photonic integrated circuits without relying on thin-film LiNbO3. This integration approach breaks the long-standing cost-performance-scalability tradeoff, and intrinsically eliminates the need for sophisticated fabrication processes, including ion slicing, wafer bonding, and LiNbO3 etching. It realizes high-density, low-loss, and record high EO tuning efficiency of VpiL = 2.87 Vcm on bulk LiNbO3 crystal substrate. Furthermore, leveraging slow-light effect near photonic crystal bandgap, an 8.5-fold EO tuning efficiency enhancement is achieved, highlighting the platform's capability in confinement control and dispersion engineering.
The realization of quantum networks capable of distributing quantum information over kilometer scale distances is key to maximizing the potential of quantum information technology. Implementing this technology requires both the ability to generate remote entanglement between quantum memory nodes, requiring an efficient spin-photon interface, and the ability to efficiently scale the classical optical control and multiplexing optics within a given node. In this work, we develop integrated photonics platforms in diamond and thin film lithium niobate to address both of these issues. Together, these platforms provide the necessary ingredients to create large scale quantum networking technology. For the quantum network nodes, we extend previous results combining diamond nanophotonic resonators with the silicon-vacancy defect as a quantum networking platform. We demonstrate, for the first time, quantum entanglement between SiV quantum memories across 35km in a deployed fiber network. We also develop additional functionalities within the SiV platform including the incorporation of deterministic strain to increase defect yield and deterministic single photon generation with the SiV. In order to enable the scalable control and multiplexing of individual SiV centers necessary for realizing practical quantum network nodes, we develop a state-of-the-art electro-optics platform operating at visible wavelengths using thin film lithium niobate. We develop an understanding of fabrication induced losses at visible wavelengths in the platform and a variety of key devices in the platform including high-bandwidth, low-drive voltage amplitude and phase modulators, as well as high-efficiency off chip couplers. Utilizing this platform we perform ultra-high efficiency electro-optic frequency shifting, achieving a 15 GHz frequency shift with over 50% efficiency. Finally, using our measured device performance, we discuss and model how these devices can effectively multiplex SiV-based quantum nodes. Thus through these two platforms we have demonstrated the necessary ingredients to realize large-scale quantum network nodes.
Frequency encoded photonic qubits promise a scalable path towards high-dimensional quantum information processing, but require efficient components for coherently mixing frequency modes. Coupled cavity modulators provide this functionality by using only a single driving microwave tone to couple hybridized optical supermodes. Here, we demonstrate a heterogeneously integrated thin-film lithium-niobate-on-silicon coupled-cavity modulator that realizes tunable bidirectional frequency mode transformations, including 50/5050/5050/50 beam splitting and near complete frequency swapping with >20 dB>20~\mathrm{dB}>20 dB pump extinction at a 10 GHz10~\mathrm{GHz}10 GHz supermode splitting. Because the electro-optic film is bonded onto a foundry fabricated silicon photonics platform, the approach is compatible with co-integration of photon pair sources, spectral filters, active tuning elements, and single photon detectors. We also bond thin-film lithium tantalate onto the same coupled-cavity platform, demonstrating material flexibility for scalable integrated frequency bin quantum photonic circuits.
Diamond photonics has enabled efficient interfaces for quantum memories and is predicted to be a critical component of quantum networks. However, scalable network architectures require spatial, temporal, and spectral control of photons, which relies on nonlinear and electro-optic functionalities that diamond alone cannot provide. Here, we demonstrate heterogeneous integration of a thin-film lithium niobate (TFLN) platform, which has strong chi-2 nonlinearity and electro-optic effects, with thin diamond films. We demonstrate high-Q diamond photonic crystal cavities (Q factors exceeding 5x10^4 at 735 nm) that are lithographically aligned with TFLN photonic backbone and critically coupled to it. This allows us to realize low-loss diamond-TFLN "escalators" (loss ~1 dB/coupler) that support efficient light transfer between them. At cryogenic temperatures (5K), we can collect photons emitted from silicon vacancies (SiVs) embedded within the diamond structure via the TFLN photonic circuit. This approach establishes a scalable route toward integrated photonic circuits for practical quantum networking and other technologies.
Electro-optical control of on-chip photonic devices is an essential tool for efficient integrated photonics. Lithium niobate on insulator (LNOI) is an emerging platform for on-chip photonics due to its large electro-optic coefficient and high nonlinearity. Integrating quantum emitters into LNOI would extend their versatility in classic photonics to quantum computing and communication. Here, we incorporate rare-earth ion (REI) quantum emitters into electro-optical tunable lithium niobite (LN) thin films and demonstrate control of LN microcavities coupled to REIs over a frequency range of 160 GHz with 5 µs switching speed. Dynamic control of the cavities enables modulation of the Purcell enhancement of REIs with short time constants. Using Purcell enhancement, we show evidence of detecting single Y b 3 + ions in LN cavities. Coupling quantum emitters in fast tunable photonic devices is an efficient method to shape the waveform of the emitter. It also offers a platform to encode quantum information in the integration of a spectral–temporal–spatial domain to achieve high levels of channel multiplexing, as well as an approach to generate deterministic single-photon sources.
We report electrical spin state readout and coherent control of an ensemble ($\sim540)ofsiliconvacancies(540) of silicon vacancies (540)ofsiliconvacancies(\mathrm{V}_{\mathrm{Si}}^{-}$) in a silicon carbide-on-insulator (SiCOI) platform, with excitation wavelengths from 780 to 990 nm, demonstrating for the first time spin state readout well beyond the zero phonon line of the V2 VSi−\mathrm{V}_{\mathrm{Si}}^{-}VSi−​. By implementing photoelectrical detection of magnetic resonance in thin-film SiCOI, we merge a scalable spin readout technique requiring no collection optics, together with a promising platform for future scalable and CMOS-compatible integrated photonics. Furthermore, we provide a comparison of optical and electrical readout between bulk silicon carbide (SiC) and thin-film SiCOI, revealing that our thin-film processing has a measured T2T_2T2​ coherence time of ≈7μ\approx 7 μ≈7μs , similar to that in the bulk SiC. These results extend the capabilities of SiCOI toward electronic and spin-based devices for scalable quantum technologies over a wide range of excitation wavelengths.