Bond reconstruction in vacancy-related structures affects their formation energies, symmetries, and electronic and optical properties. Using density functional theory, we investigate bond reconstruction mechanisms of monovacancies and vacancy aggregates in monolayer silicon carbide. Multiple bond descriptors reveal that isolated monovacancies undergo both in-plane reconstruction and out-of-plane distortion, which together shape their stability and electronic structure. For compact vacancy aggregates, we show that bond reconstruction acts as a key stabilization mechanism. However, in carbon monovacancy, reconstruction suppresses optical activity. In contrast, a highly stable aggregate composed of three carbon vacancies surrounding a silicon vacancy emerges as a promising infrared color-center candidate, combining a triplet ground state with a favorable Debye-Waller factor of the emission. These results highlight the role of bond reconstruction in defining the quantum properties of vacancy defects in two-dimensional silicon carbide.
Bond reconstruction in vacancy-related structures affects their formation energies, symmetries, and electronic and optical properties. Using density functional theory, we investigate bond reconstruction mechanisms of monovacancies and vacancy aggregates in monolayer silicon carbide. Multiple bond descriptors reveal that isolated monovacancies undergo both in-plane reconstruction and out-of-plane distortion, which together shape their stability and electronic structure. For compact vacancy aggregates, we show that bond reconstruction acts as a key stabilization mechanism. However, in carbon monovacancy, reconstruction suppresses optical activity. In contrast, a highly stable aggregate composed of three carbon vacancies surrounding a silicon vacancy emerges as a promising infrared color-center candidate, combining a triplet ground state with a favorable Debye-Waller factor of the emission. These results highlight the role of bond reconstruction in defining the quantum properties of vacancy defects in two-dimensional silicon carbide.
The identification of a microscopic configuration of point defects acting as quantum bits is a key step in the advance of quantum information processing and sensing. Among the numerous candidates, silicon-vacancy related centers in silicon carbide (SiC) have shown remarkable properties owing to their particular spin-3/2 ground and excited states. Although, these centers were observed decades ago, two competing models, the isolated negatively charged silicon vacancy and the complex of negatively charged silicon vacancy and neutral carbon vacancy [Phys. Rev. Lett. 115, 247602 (2015)], are still argued as an origin. By means of high-precision first-principles calculations and high-resolution electron spin resonance measurements, we here unambiguously identify the Si-vacancy related qubits in hexagonal SiC as isolated negatively charged silicon vacancies. Moreover, we identify the Si-vacancy qubit configurations that provide room-temperature optical readout.
Divacancy defects in silicon carbide have long-lived electronic spin states and sharp optical transitions. Because of the various polytypes of SiC, hundreds of unique divacancies exist, many with spin properties comparable to the nitrogen-vacancy center in diamond. If ensembles of such spins can be all-optically manipulated, they make compelling candidate systems for quantum-enhanced memory, communication, and sensing applications. We report here direct all-optical addressing of basal plane-oriented divacancy spins in 4H-SiC. By means of magneto-spectroscopy, we fully identify the spin triplet structure of both the ground and the excited state, and use this for tuning of transition dipole moments between particular spin levels. We also identify a role for relaxation via intersystem crossing. Building on these results, we demonstrate coherent population trapping -a key effect for quantum state transfer between spins and photons- for divacancy sub-ensembles along particular crystal axes. These results, combined with the flexibility of SiC polytypes and device processing, put SiC at the forefront of quantum information science in the solid state.
We present a comprehensive first-principles investigation of carbon self-interstitial defects in diamond, ranging from mono- to hexa-interstitial complexes. By quantum mechanical density functional theory, empowered by interatomic potential models, we efficiently sample the complex configurational landscape and identify both known and previously unreported defect geometries. Our results reveal a pronounced energetic driving force for aggregation: the formation energy per interstitial decreases systematically from isolated split interstitials to compact multi-interstitial clusters, with the tetra-interstitial platelet emerging as a particularly stable structural motif. Additionally, charge analysis indicates that the predominantly covalent bonding in diamond becomes more polar within the defect centers. Analysis of defect energy levels shows that only the investigated mono-, di-, penta-, and hexa-interstitial complexes introduce in-gap electronic states, whereas the tri- and tetra-interstitial clusters are electronically inert. Vibrational spectroscopies further reveal that self-interstitials generate characteristic signatures. Short carbon-carbon bonds inside the defect cores give rise to high-frequency vibrational modes between 1375 and 1925 cm−1, which are strongly IR-active but exhibit weak Raman activity. Through a systematic analysis of metastable configurations, we identify the 3H defect center as a neutral di-interstitial defect. Based on this identification, we further suggest that the TR12 center may arise from a 3H-containing defect like a metastable hexa-interstitial configuration. Taken together, these findings provide a coherent picture of the structural, electronic, and vibrational characteristics of carbon self-interstitials and establish a robust framework for their experimental identification.
Defect based qubit systems like the nitrogen vacancy center in diamond have recently emerged as promising candidates for quantum technologies due to their combination of long coherence times, room temperature operation, and robust optical interface. In order to realize many of their proposed applications, defect qubits must be incorporated into scalable devices architectures consisting of photonic, mechanical, or electrical degrees of freedom. Despite much recent progress, many challenges remain for diamond growth and device fabrication. As an alternate approach, we engaged in a search for nitrogen vacancy center analogues in alternative materials with the hope of obtaining a greater degree of control over defect and material properties. Ultimately, we discovered that divacancy-related point defects in all three of the most common forms of silicon carbide- termed 4H, 6H, and 3C- act as analogues to the nitrogen vacancy center in diamond. We chose to focus our research primarily on defects in 3C silicon carbide (termed 'Ky5' defects) because of its availability as a single crystal heteroepitaxial thin film grown on silicon, an advantage that greatly facilitates the fabrication of functional devices. We characterized the spin and optical properties of Ky5 defects in thin film geometries and observed many similarities to the nitrogen vacancy center. We performed the first measurements of spin dynamics in 3C silicon carbide and demonstrate coherent control of defect spins up to room temperature and observe coherence times of up to 22 microseconds. To demonstrate their use in real devices, we designed, fabricated, and characterized photonic crystal cavities in 3C silicon carbide thin films with mode volumes of less than (lambda/n)^3 and Q's as high as 1,500 with integrated Ky5 defects. Additionally, we performed simulations and analysis of the fabricated structures using observed structural imperfections to determine that the Q's are likely limited primarily by the non-vertical structure sidewall angle. Despite the modest Q's of these structures, they can be utilized to generate large local field intensities to enhance optical interactions with Ky5 qubit states within the cavities. We accomplish this by performing cavity enhanced photoluminescence excitation spectroscopy on cavity modes tuned to the zero phonon line of the defects and observe large (as high as 30 times) increases in the luminescence and optically detected magnetic resonance signals originating from the defect states and approximately 2x faster rates of ground state spin initialization. In addition, we use these techniques to probe the photoluminescence dynamics of the Ky5 defects' optical pumping cycle, perform excitation wavelength dependent studies of spin and spectral inhomogeneity, and use the small mode volume and narrowband photoluminescence enhancements of the cavities to observe spectrally distinct subensembles of defects with linewidths as narrow as 25 GHz within the inhomogeneously broadened zero phonon line. Although much is still unknown regarding the properties of these defects, they show great promise as a candidate system for defect qubit based quantum devices and technologies.
Robust single spin color centers in solid state systems with telecom wavelength emission are vital to quantum photonics and quantum networks. The nitrogen vacancy (NV) centers in silicon carbide (SiC) have become promising platforms for those applications. However, little is known about the detailed optical properties of the NV centers. In this paper, we investigate the photophysics of the single NV centers in 4H-SiC. The results demonstrate that the NV centers comprise three energy-level electronic structures. Particularly, for c -axis NV centers, both the excitation and the emission polarization degrees are larger than 90%. Photon purity and photostability of the single NV centers are maintained at an elevated temperature up to 400 K. These experiments constitute an important step toward using the NV centers in SiC with respect to quantum photonics.
Color centers in silicon carbide are emerging candidates for distributed spin-based quantum applications due to the scalability of host materials and the demonstration of integration into nanophotonic resonators. Recently, silicon vacancy centers in silicon carbide have been identified as a promising system with excellent spin and optical properties. Here, we fully study the spin-optical dynamics of the single silicon vacancy center at hexagonal lattice sites, namely V1, in 4H-polytype silicon carbide. By utilizing resonant and above-resonant sublifetime pulsed excitation, we determine spin-dependent excited-state lifetimes and intersystem-crossing rates. Our approach to inferring the intersystem-crossing rates is based on all-optical pulsed initialization and readout scheme, and is applicable to spin-active color centers with similar dynamics models. In addition, the optical transition dipole strength and the quantum efficiency of V1 defect are evaluated based on coherent optical Rabi measurement and local-field calibration employing electric field simulation. The measured rates well explain the results of spin-state polarization dynamics, and we further discuss the altered photoemission dynamics in resonant enhancement structures such as radiative lifetime shortening and Purcell enhancement. By providing a thorough description of the V1 center's spin-optical dynamics, our work provides deep understanding of the system, which guides implementations of scalable quantum applications based on silicon vacancy centers in silicon carbide.