Engineering proximity effects in twisted van der Waals heterostructures offers a powerful platform for designing electronic properties. While theoretical predictions of quantum interference in transition metal dichalcogenide-encapsulated graphene can selectively control the spin-orbit coupling component, experimental realizations have remained elusive. Here, we report pure valley-Zeeman spin-orbit coupling in monolayer graphene, achieved by encapsulation between two parallel twisted WSe$_2$ monolayers. We observed a symmetry-enforced reordering of Landau levels, which is driven by the competition between the fixed valley-Zeeman energy and the magnetic-field-dependent cyclotron energy. This reordering is characterized by a transition from symmetry-broken states in the quantum Hall effect to a restored fourfold degeneracy with integer or half-integer quantum Hall sequences. We also demonstrate the ability to completely quench the proximity spin-orbit coupling by tuning the encapsulated geometry.
Tailoring pure valley-Zeeman spin-orbit coupling in WSe2-encapsulated monolayer graphene
Engineering proximity effects in twisted van der Waals heterostructures offers a powerful platform for designing electronic properties. While theoretical predictions of quantum interference in transition metal dichalcogenide-encapsulated graphene can selectively control the spin-orbit coupling component, experimental realizations have remained elusive. Here, we report pure valley-Zeeman spin-orbit coupling in monolayer graphene, achieved by encapsulation between two parallel twisted WSe2 monolayers. We observed a symmetry-enforced reordering of Landau levels, which is driven by the competition between the fixed valley-Zeeman energy and the magnetic-field-dependent cyclotron energy. This reordering is characterized by a transition from symmetry-broken states in the quantum Hall effect to a restored fourfold degeneracy with integer or half-integer quantum Hall sequences. We also demonstrate the ability to completely quench the proximity spin-orbit coupling by tuning the encapsulated geometry.
Confinement in a magnetically induced WSe2 quantum dots
Monolayer tungsten diselenide (WSe2) has become a suitable platform for quantum transport and spintronics and valleytronics applications because it possesses an intrinsic band gap and strong spin-orbit coupling and spin-valley coupling features. The electrostatic confinement of Dirac fermions proves challenging in graphene because of Klein tunneling, yet WSe2 provides an environment that supports both carrier localization and the development of confined quantum states. In this work, we theoretically investigate the confinement of massive Dirac fermions in a WSe2 quantum dot generated by a localized magnetic field. Using the effective Dirac Hamiltonian in the presence of a magnetic flux, we derive the exact wave functions and scattering coefficients by employing Kummer's confluent hypergeometric functions together with Bessel and Hankel functions. Our results show that the localized magnetic field provides an efficient mechanism to suppress Klein tunneling and promote the formation of stable quasibound states. We systematically examine the scattering efficiency and carrier density distributions as functions of the incident energy, magnetic field strength, and quantum dot radius. We find that low-energy carriers are strongly confined by the magnetic barrier, while the interplay between magnetic localization and geometric confinement gives rise to sharp and tunable resonance peaks. These results provide valuable insight into the control of spin-valley transport in transition metal dichalcogenide nanostructures and establish a theoretical basis for the development of quantum confinement devices and quantum information technologies.
Gate-tunable spin-valley transport via carrier velocity in monolayer WSe2
We theoretically investigate spin- and valley-resolved quantum transport in monolayer tungsten diselenide (WSe2) described by an effective massive Dirac Hamiltonian. Particular attention is devoted to a finite barrier region characterized by simultaneously modulated Fermi velocity and scalar potential. The barrier velocity v2 is related to the external velocity v1 through a velocity ratio ξ=v2/v1, motivated by an optical analogy with the Snell-Descartes law. The exact refraction condition depends on the full spin- and valley-resolved dispersion, and the simple ratio ξ=v2/v1 is recovered only in the massless, symmetric limit. The interplay of intrinsic spin-orbit coupling in the conduction and valence bands, quantified by λc and λv, with spin- and valley-dependent Zeeman fields, Ms and Mv, gives rise to substantial changes in the quasiparticle dispersion, leading to pronounced modifications of the transport characteristics. By solving the Dirac equation and enforcing current-conserving matching conditions at the interfaces, we compute the spin- and valley-dependent transmission probability and conductance. Our results demonstrate that the barrier velocity, scalar potential, incidence angle, incident energy, and barrier width serve as effective control parameters for transport, giving rise to strong anisotropy and resonant tunneling features. Furthermore, we show that both the magnitude and orientation of spin- and valley-polarized currents can be continuously tuned via velocity and potential modulation. These findings establish combined velocity and potential engineering as a powerful theoretical framework for controlling spin-valley physics in two-dimensional transition-metal dichalcogenides.
Long-lived dark excitons in monolayer WSe2 present promising candidates for carrying spin and valley information, but their optical access and spin manipulation have conventionally required the use of strong external magnetic fields. Here, using a ferroelectric hybrid perovskite heterostructure, we leverage the ferroelectric proximity effect to break the WSe2's in-plane rotational symmetry and brighten the spin-forbidden dark excitons under zero magnetic field conditions. Furthermore, we show that the twist angle between the WSe2 and perovskite crystals controls the ferroelectric coupling strength and valley-contrasting polarization. Our proposed mechanism, supported by a four-band tight-binding model, suggests that the ferroelectric proximity effect induces an asymmetric intersublattice interaction, generating an effective in-plane spin-orbit coupling (SOC) field that rotates spin/valley polarization and brightens dark excitons. Our work establishes ferroelectric proximity coupling as an electrically reconfigurable, magnetic-field-free strategy for spin exciton control in two-dimensional semiconductors.
Tuning quantum tunneling in WSe2 via strain engineering
We present a comprehensive theoretical study of strain-engineered quantum transport in monolayer tungsten diselenide (WSe2) in the presence of an electrostatic scalar potential. By incorporating strain effects within a low-energy Dirac framework, we analyze their impact on spin- and valley-resolved transmission, conductance, and polarization. The applied potential barrier partitions the system into three distinct regions, allowing for an analytical derivation of the wave functions in each domain. Enforcing continuity conditions at the interfaces yields exact expressions for the transmission and reflection amplitudes. The transmission probability is evaluated from the corresponding current densities, while the conductance is obtained using the Landauer-Büttiker formalism, enabling a quantitative determination of spin and valley polarizations. Our numerical analysis reveals that strain acts as a powerful tuning parameter that reshapes the electronic dispersion and strongly modifies transport characteristics. In particular, the transmission and conductance exhibit pronounced oscillatory behavior driven by quantum interference and resonant tunneling mechanisms. More importantly, both spin and valley polarizations display substantial and highly controllable variations as functions of strain, barrier height, and incident energy. These results demonstrate that strain and electrostatic engineering provide an efficient and versatile platform for manipulating spin-valley degrees of freedom in WSe2. The ability to tailor polarization and interference effects suggests promising opportunities for the design of next-generation spintronic, valleytronic, and optoelectronic devices based on two-dimensional transition-metal dichalcogenides.
Rapid progress in valleytronics and spintronics is limited by the scarcity of two-dimensional materials that simultaneously provide robust valley splitting and strong spin selectivity. Here we showed that a van der Waals heterostructure (VSe2/VN) built from hexagonal VSe2 and hexagonal VN addressed this gap. Using first-principles density functional theory, phonon, ab initio molecular dynamics stability tests, Bader charge analysis, and Wannier-based Berry-curvature calculations, we demonstrated an energetically and dynamically stable heterostructure that exhibited interlayer charge transfer and a work function intermediate between the constituent monolayers. The electronic structure showed small indirect PBE gap (108.9 meV), with HSE06 indicating a half-metallic tendency; a sizable conduction-band valley splitting (ΔCKK' = 22.9 meV for spin-up and ΔCKK' = 61.3 meV for spin-down); and pronounced spin asymmetry, where the spin-down channel showed a wide semiconducting gap (0.64 eV) while the spin-up channel was nearly gapless. These features yielded a high zero-strain spin-filter efficiency P = 75.4%, tunable to 82.5% under +4% biaxial tensile strain. The heterostructure also supported non-zero, valley-contrasting Berry curvature, and a large anomalous Hall conductivity (peak sigmaxy = 568.33 S/cm). Importantly, mean-field estimation placed the ferromagnetic Curie temperature near room temperature at zero strain (Tc = 284.04 K), while Tc decreased to 183.9 K at +4% strain, the magnetic order remained robust to cryogenic temperatures, providing a beneficial tuning knob to balance spin-filter performance with thermal stability in device-relevant regimes. These results identified VSe2/VN as a practical, strain-tunable platform for integrated valleytronic, spintronic devices, and for exploring anomalous Hall and valley-dependent transport phenomena.
We develop a symmetry-based theory of spin-orbit-valley coupling in silicon that reveals an intrinsic source of Dresselhaus spin-orbit coupling independent of interfaces or external electric fields. Treating the valley degree of freedom as a symmetry-carrying quantum degree of freedom, we show that the Dresselhaus interaction is necessarily valley off-diagonal and that a bulk contribution proportional to the valley Pauli matrix τ1 is symmetry allowed. Tight-binding calculations yield a bulk coupling more than an order of magnitude larger than typical interface-induced spin-orbit coupling; achieving the same energy scale through the interface-induced mechanism would require electric fields roughly 50 times larger than typical fields. We further derive the symmetry-allowed spin-valley couplings generated by magnetic-field gradients and show how they account for the valley-dependent Zeeman splitting observed in micromagnet experiments. A slight tilt of the background magnetic field out of the plane produces an additional isotropic contribution linear in Bz, providing an experimentally accessible signature of the corresponding coupling constant. Finally, we predict a spin-independent micromagnet-induced valley splitting in the τ3 channel, which is distinct from the τ1,2 channels generated by alloy disorder and therefore remains robust against disorder-induced cancellation. These results establish valley symmetry as a fundamental ingredient in the spin-orbit physics of silicon and provide new mechanisms for controlling and probing spin and valley degrees of freedom in silicon quantum devices.