We study field-controlled spin-valley transport in monolayer MoS$_2$ through a single electrostatic barrier and a uniform off-resonant elliptically polarized irradiation. Starting from the massive Dirac Hamiltonian with intrinsic spin-orbit coupling, we use a high-frequency Floquet expansion to obtain an effective static model with a laser-renormalized mass (gap) term. We solve the scattering problem by spinor matching and derive the exact analytic expression for the transmission. The numerical results show that the drive tunes both the spin-valley-dependent propagation threshold inside the barrier and the Fabry-Pérot phase, creating controllable pass/stop bands. By varying both the laser intensity (amplitude) and the polarization shape, we show that the same junction can be switched between broadband valley filtering and resonance-selective operation, and the valley contrast remains visible in the Landauer conductance. Our findings establish an efficient route for realizing optically reconfigurable valleytronic and spintronic functionalities in MoS$_2$.
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14 pages, 8 figures. Version to appear in Physica E 2026
Field-tunable spin-valley transport in monolayer MoS2
We study field-controlled spin-valley transport in monolayer MoS2 through a single electrostatic barrier and a uniform off-resonant elliptically polarized irradiation. Starting from the massive Dirac Hamiltonian with intrinsic spin-orbit coupling, we use a high-frequency Floquet expansion to obtain an effective static model with a laser-renormalized mass (gap) term. We solve the scattering problem by spinor matching and derive the exact analytic expression for the transmission. The numerical results show that the drive tunes both the spin-valley-dependent propagation threshold inside the barrier and the Fabry-Pérot phase, creating controllable pass/stop bands. By varying both the laser intensity (amplitude) and the polarization shape, we show that the same junction can be switched between broadband valley filtering and resonance-selective operation, and the valley contrast remains visible in the Landauer conductance. Our findings establish an efficient route for realizing optically reconfigurable valleytronic and spintronic functionalities in MoS2.
Strain- and potential-controlled tunneling in monolayer MoS2
We present a theoretical study of spin- and valley-resolved quantum transport in monolayer MoS2 under the combined influence of mechanical strain and an external scalar potential, a combination whose simultaneous unexplored. Within an effective massive Dirac Hamiltonian that incorporates intrinsic spin--orbit coupling, strain induces valley-dependent momentum shifts that lift the degeneracy between the K and K′ valleys and strongly modify the transport characteristics. The scalar potential modifies the tunneling spectrum, leading to pronounced changes in resonant transmission, Fabry--Pérot interference, and conductance. We show that the interplay between strain and electrostatic potential enables efficient control of both valley and spin polarization of the transmitted current. In particular, we identify a dual-knob control scheme in which the barrier width governs the frequency of conductance oscillations while strain independently controls their phase and amplitude. Furthermore, we predict electrostatic spin inversion -- a sign reversal of spin polarization achievable purely by gate tuning at finite strain, requiring no geometric reconfiguration. Depending on the strain orientation, the transmission probability and conductance can be selectively suppressed or enhanced, resulting in highly tunable valley- and spin-polarized transport. These findings demonstrate that strain and potential engineering provide orthogonal and independently operable mechanisms for controlling conductance as well as spin and valley degrees of freedom in monolayer MoS2, offering promising prospects for spintronic and valleytronic device applications.
Gate-tunable spin-valley transport via carrier velocity in monolayer WSe2
We theoretically investigate spin- and valley-resolved quantum transport in monolayer tungsten diselenide (WSe2) described by an effective massive Dirac Hamiltonian. Particular attention is devoted to a finite barrier region characterized by simultaneously modulated Fermi velocity and scalar potential. The barrier velocity v2 is related to the external velocity v1 through a velocity ratio ξ=v2/v1, motivated by an optical analogy with the Snell-Descartes law. The exact refraction condition depends on the full spin- and valley-resolved dispersion, and the simple ratio ξ=v2/v1 is recovered only in the massless, symmetric limit. The interplay of intrinsic spin-orbit coupling in the conduction and valence bands, quantified by λc and λv, with spin- and valley-dependent Zeeman fields, Ms and Mv, gives rise to substantial changes in the quasiparticle dispersion, leading to pronounced modifications of the transport characteristics. By solving the Dirac equation and enforcing current-conserving matching conditions at the interfaces, we compute the spin- and valley-dependent transmission probability and conductance. Our results demonstrate that the barrier velocity, scalar potential, incidence angle, incident energy, and barrier width serve as effective control parameters for transport, giving rise to strong anisotropy and resonant tunneling features. Furthermore, we show that both the magnitude and orientation of spin- and valley-polarized currents can be continuously tuned via velocity and potential modulation. These findings establish combined velocity and potential engineering as a powerful theoretical framework for controlling spin-valley physics in two-dimensional transition-metal dichalcogenides.
Tuning quantum tunneling in WSe2 via strain engineering
We present a comprehensive theoretical study of strain-engineered quantum transport in monolayer tungsten diselenide (WSe2) in the presence of an electrostatic scalar potential. By incorporating strain effects within a low-energy Dirac framework, we analyze their impact on spin- and valley-resolved transmission, conductance, and polarization. The applied potential barrier partitions the system into three distinct regions, allowing for an analytical derivation of the wave functions in each domain. Enforcing continuity conditions at the interfaces yields exact expressions for the transmission and reflection amplitudes. The transmission probability is evaluated from the corresponding current densities, while the conductance is obtained using the Landauer-Büttiker formalism, enabling a quantitative determination of spin and valley polarizations. Our numerical analysis reveals that strain acts as a powerful tuning parameter that reshapes the electronic dispersion and strongly modifies transport characteristics. In particular, the transmission and conductance exhibit pronounced oscillatory behavior driven by quantum interference and resonant tunneling mechanisms. More importantly, both spin and valley polarizations display substantial and highly controllable variations as functions of strain, barrier height, and incident energy. These results demonstrate that strain and electrostatic engineering provide an efficient and versatile platform for manipulating spin-valley degrees of freedom in WSe2. The ability to tailor polarization and interference effects suggests promising opportunities for the design of next-generation spintronic, valleytronic, and optoelectronic devices based on two-dimensional transition-metal dichalcogenides.
Floquet-driven tunneling control in monolayer MoS2
We study how fermions in molybdenum disulfide MoS2 interact with a laser field and a static potential barrier, focusing on the transmission probability. Our aim is to understand and control photon-assisted quantum transport in this two-dimensional material under external driving. We use the Floquet approximation to describe the wave functions in the three regions of the system. By applying continuity conditions at the boundaries, we obtain a set of equations involving an infinite number of Floquet modes. We explicitly determine transmissions involving the central band E and the first sidebands E±ℏω. As for higher-order bands, we use the transfer matrix approach together with current density to compute the associated transmissions. Our results reveal that the transmission probability oscillates for both spin-up and spin-down electrons. The oscillations of spin-down electrons occur over nearly twice the period of spin-up electrons. Among all bands, the central one consistently shows the highest transmission. We also find that stronger laser fields and wider barriers both lead to reduced transmission. Moreover, laser irradiation enables controllable channeling and filtering of transmission bands by tuning the laser intensity and system parameters. This highlights the potential of laser-driven MoS2 structures for highly sensitive electromagnetic sensors and advanced optoelectronic devices.
Confinement in a magnetically induced WSe2 quantum dots
Monolayer tungsten diselenide (WSe2) has become a suitable platform for quantum transport and spintronics and valleytronics applications because it possesses an intrinsic band gap and strong spin-orbit coupling and spin-valley coupling features. The electrostatic confinement of Dirac fermions proves challenging in graphene because of Klein tunneling, yet WSe2 provides an environment that supports both carrier localization and the development of confined quantum states. In this work, we theoretically investigate the confinement of massive Dirac fermions in a WSe2 quantum dot generated by a localized magnetic field. Using the effective Dirac Hamiltonian in the presence of a magnetic flux, we derive the exact wave functions and scattering coefficients by employing Kummer's confluent hypergeometric functions together with Bessel and Hankel functions. Our results show that the localized magnetic field provides an efficient mechanism to suppress Klein tunneling and promote the formation of stable quasibound states. We systematically examine the scattering efficiency and carrier density distributions as functions of the incident energy, magnetic field strength, and quantum dot radius. We find that low-energy carriers are strongly confined by the magnetic barrier, while the interplay between magnetic localization and geometric confinement gives rise to sharp and tunable resonance peaks. These results provide valuable insight into the control of spin-valley transport in transition metal dichalcogenide nanostructures and establish a theoretical basis for the development of quantum confinement devices and quantum information technologies.
Rapid progress in valleytronics and spintronics is limited by the scarcity of two-dimensional materials that simultaneously provide robust valley splitting and strong spin selectivity. Here we showed that a van der Waals heterostructure (VSe2/VN) built from hexagonal VSe2 and hexagonal VN addressed this gap. Using first-principles density functional theory, phonon, ab initio molecular dynamics stability tests, Bader charge analysis, and Wannier-based Berry-curvature calculations, we demonstrated an energetically and dynamically stable heterostructure that exhibited interlayer charge transfer and a work function intermediate between the constituent monolayers. The electronic structure showed small indirect PBE gap (108.9 meV), with HSE06 indicating a half-metallic tendency; a sizable conduction-band valley splitting (ΔCKK' = 22.9 meV for spin-up and ΔCKK' = 61.3 meV for spin-down); and pronounced spin asymmetry, where the spin-down channel showed a wide semiconducting gap (0.64 eV) while the spin-up channel was nearly gapless. These features yielded a high zero-strain spin-filter efficiency P = 75.4%, tunable to 82.5% under +4% biaxial tensile strain. The heterostructure also supported non-zero, valley-contrasting Berry curvature, and a large anomalous Hall conductivity (peak sigmaxy = 568.33 S/cm). Importantly, mean-field estimation placed the ferromagnetic Curie temperature near room temperature at zero strain (Tc = 284.04 K), while Tc decreased to 183.9 K at +4% strain, the magnetic order remained robust to cryogenic temperatures, providing a beneficial tuning knob to balance spin-filter performance with thermal stability in device-relevant regimes. These results identified VSe2/VN as a practical, strain-tunable platform for integrated valleytronic, spintronic devices, and for exploring anomalous Hall and valley-dependent transport phenomena.