The nitrogen vacancy (NV) center in diamond, a well-studied, optically active spin defect, is the prototypical system in many state of the art quantum sensing and communication applications. In addition to the enticing properties intrinsic to the NV center, its diamond host's nuclear and electronic spin baths can be leveraged as resources for quantum information, rather than considered solely as sources of decoherence. However, current synthesis approaches result in stochastic defect spin positions, reducing the technology's potential for deterministic control and yield of NV-spin bath systems, as well as scalability and integration with other technologies. Here, we demonstrate the use of theoretical calculations of electronic central spin decoherence as an integral part of an NV-spin bath synthesis workflow, providing a path forward for the quantitative design of NV center-based quantum sensing systems. We use computationally generated coherence data to characterize the properties of single NV center qubits across relevant growth parameters to find general trends in coherence time distributions dependent on spin bath dimensionality and density. We then build a maximum likelihood estimator with our theoretical model, enabling the characterization of a test sample through NV T2* measurements. Finally, we explore the impact of dimensionality on the yield of strongly coupled electron spin systems. The methods presented herein are general and applicable to other qubit platforms that can be appropriately simulated.
Solid-state molecular qubits with open-shell ground states have great potential for addressability, scalability, and tunability, but understanding the fundamental limits of quantum coherence in these systems is challenging due to the complexity of the qubit environment. To address this, we develop a random Hamiltonian approach where the molecular
g-tensor fluctuates due to classical lattice motion obtained from molecular dynamics simulations at constant temperature. Atomistic
g-tensor fluctuations are used to construct Redfield quantum master equations that predict the relaxation
T1 and dephasing
T2 times of copper porphyrin qubits in a crystalline framework. Assuming one-phonon spin-lattice interaction processes,
1/T temperature scaling and
1/B3 magnetic field scaling of
T1 are established using atomistic bath correlation functions. Atomistic
T1 predictions overestimate the available experimental data by orders of magnitude. Quantitative agreement with measurements at all magnetic fields is restored by introducing a magnetic field noise model to describe lattice nuclear spins, with field-dependent noise amplitude in the range
δB∼10μT−1mT for the copper porphyrin system. We show that while
T1 scales as
1/B experimentally due to a combination of spin-lattice and magnetic noise contributions,
T2 scales strictly as $ 1/B^2$ due to low-frequency dephasing processes associated with magnetic field noise. Our work demonstrates the potential of dynamical methods for modeling the open quantum system dynamics of molecular spin qubits.
Spin-lattice relaxation within the nitrogen-vacancy (NV) center's electronic ground-state spin triplet limits its coherence times, and thereby impacts its performance in quantum applications. We report measurements of the relaxation rates on the NV center's |m_{s}=0⟩↔|m_{s}=±1⟩ and |m_{s}=-1⟩↔|m_{s}=+1⟩ transitions as a function of temperature from 9 to 474 K in high-purity samples. We show that the temperature dependencies of the rates are reproduced by an ab initio theory of Raman scattering due to second-order spin-phonon interactions, and we discuss the applicability of the theory to other spin systems. Using a novel analytical model based on these results, we suggest that the high-temperature behavior of NV spin-lattice relaxation is dominated by interactions with two groups of quasilocalized phonons centered at 68.2(17) and 167(12) meV.
Spin defects in diamond are promising platforms for quantum sensing. The longest electron spin relaxation times (
T1) at room temperature for solid-state defects are observed in nitrogen vacancy centers in diamond, which can reach 6.67 ms, and substitutional nitrogen ("P1 centers") in diamond, which exhibit a
T1 of 2 ms. No other solid-state defect has exhibited millisecond-scale spin relaxation times at room temperature thus far. Here, we characterize the spin properties of the WAR5 defect in diamond with pulsed electron spin resonance. The observed
T1 is one of the longest for solid-state spin defects: 0.97(27) ms at room temperature and 14.38(19) min at 4 K. The observed coherence time (
T2) is 246(7)
μs, which can be extended to 6.49(34) ms at 4 K with dynamical decoupling. Furthermore, we demonstrate optical spin polarization with a range of wavelengths from 405 nm to 500 nm and propose potential zero-phonon line candidates.
Quantum decoherence induced by defects remains a major limitation for solid-state quantum technologies, yet predicting decoherence in realistic materials remains computationally challenging. Complex defect populations are often approximated as homogeneous spin baths, obscuring the role of defect-specific electronic structure and spin dynamics. Here, we develop a predictive framework for decoherence in diamond by combining first-principles electronic-structure calculations, quantum many-body spin-bath simulations, and experimental validation. The framework incorporates defect-resolved spin Hamiltonians and heterogeneous spin baths containing multiple paramagnetic defect species. Using diamond nitrogen-vacancy ensembles as a model platform, we investigate mixed nitrogen-, vacancy-, and hydrogen-related defect environments. We show that decoherence depends not only on defect density but also on defect identity and bath composition, whose distinct electronic structures, hyperfine interactions, and spin dynamics produce different coherence behavior. Heterogeneous defect populations can either suppress or enhance decoherence, producing trends unexplained by homogeneous-bath models. Magnetic-field-dependent Hahn-echo measurements on samples with different defect concentrations validate the framework. The calculations reproduce the observed coherence times and stretched-exponential decay behavior across a broad magnetic-field range and identify vacancy-related defects as critical contributors beyond the conventionally assumed P1 spin bath. By linking atomistic defect properties to quantum coherence, our framework provides a predictive route for identifying hidden defect environments and optimizing decoherence in defect-based quantum materials.
Abstract Spin qubits with long dephasing times are an essential requirement for the development of new quantum technologies and have many potential applications ranging from quantum information processing to quantum memories and quantum networking. Here we report a theoretical study and the calculation of the spin dephasing time of defect color centers for the negatively charged nitrogen vacancy center in diamond. We employ ab initio density functional theory to compute the electronic structure, and extract the dephasing time using a cumulant expansion approach. We find that phonon-induced dephasing is a limiting factor for T_2 at low temperatures, in agreement with recent experiments that use dynamical decoupling techniques. This approach can be generalized to other spin defects in semiconductors, molecular systems, and other band gapped materials.