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arXiv:2604.13337

Spin-Dependent Charge-State Conversion in NV Ensembles Mediated by Electron Tunneling

Neil B. Manson, Morgan P. Hedges, M. S. J. Barson, Carlos A. Meriles, Ronald Ulbricht, Marcus W. Doherty

Published Apr 14, 2026• 0 citations
arXivHTMLPDF

Abstract

The nitrogen-vacancy (NV) center in diamond enables optical initialization and readout of its electronic spin, forming the basis of a wide range of quantum sensing and metrology applications. A central challenge in such measurements is the coexistence of two charge states, NV- and NV0: While detection protocols rely on the spin-dependent properties of NV-, fluorescence from NV0 does not carry useful contrast and is typically removed as background, reducing the available signal. Here, we show that the origin of NV0 emission depends strongly on the excitation wavelength in nitrogen-containing diamond. Using ensembles of NV centers with varying nitrogen concentrations, we compare excitation at the NV0 zero-phonon line (ZPL) at 575 nm with the commonly used 532 nm. We find that excitation at 575 nm generates NV0 predominantly through spin-selective tunneling from the excited state of NV- to nearby nitrogen donors, such that the NV0 emission follows the spin polarization of NV-. As a result, the NV0 fluorescence contributes to the measurable spin contrast, allowing the full fluorescence signal to be used for detection. This result opens opportunities for improved sensitivity in NV-based sensing applications.

DOI
10.48550/arxiv.2604.13337

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The nitrogen-vacancy (NV) center in diamond enables optical initialization and readout of its electronic spin, forming the basis of a wide range of quantum sensing and metrology applications. A central challenge in such measurements is the coexistence of two charge states, NV- and NV0: While detection protocols rely on the spin-dependent properties of NV-, fluorescence from NV0 does not carry useful contrast and is typically removed as background, reducing the available signal. Here, we show that the origin of NV0 emission depends strongly on the excitation wavelength in nitrogen-containing diamond. Using ensembles of NV centers with varying nitrogen concentrations, we compare excitation at the NV0 zero-phonon line (ZPL) at 575 nm with the commonly used 532 nm. We find that excitation at 575 nm generates NV0 predominantly through spin-selective tunneling from the excited state of NV- to nearby nitrogen donors, such that the NV0 emission follows the spin polarization of NV-. As a result, the NV0 fluorescence contributes to the measurable spin contrast, allowing the full fluorescence signal to be used for detection. This result opens opportunities for improved sensitivity in NV-based sensing applications.
Nitrogen-vacancy (NV) centers in diamond can be read out optically or electrically. To better understand the physics of their internal electronic transitions as well as ionization and recharging, we study the spin contrast observed in both readout methods as a function of the excitation wavelength for both single NV centers and ensembles. While the optical readout works best between 525 and 550 nm, the highest electrical spin contrast is achieved by resonantly exciting the NV0 zero-phonon line at 575 nm. Additional spectral features attributed to a further excited state of NV−, phonon sidebands and tunnel coupling to nitrogen donors are observed and discussed.
Nitrogen-vacancy (NV) centers in single-crystal CVD diamond are promising candidates for quantum sensing due to their remarkable optical and spin properties [1]. These defects exhibit stable photoluminescence (PL), long spin coherence times, and high sensitivity to external fields [2]. In this study, we present a room-temperature PL characterization of NV centers excited with a 532 nm laser. The setup was optimized for high signal-to-noise ratio and spectral resolution. Key parameters analyzed include emission intensity, zero-phonon line (ZPL) at ~637 nm, phonon sidebands, and the charge state distribution between NV⁰ and NV⁻. The NV⁻ state, crucial for spin-based sensing, is evaluated to understand its stability under different nitrogen doping conditions [3]. The relative intensities of NV⁰ and NV⁻ provide insights into nitrogen incorporation and vacancy formation. These results contribute to optimizing synthesis conditions for enhanced NV⁻ concentration, supporting the advancement of diamond-based quantum sensing technologies.
The nitrogen-vacancy (NV) lattice defect in diamond, consisting of an N substitutional atom and an adjacent C vacancy, is commonly observed in two charge states, negative (NV−) and neutral (NV0). The NV− defect exhibits spin state-dependent fluorescence and is, therefore, amenable to optical methods for spin-state readout, while the NV0 is not. Hence, the NV− defect is much more useful for quantum sensing and quantum information processing. However, only NV0 electroluminescence has been observed, even from centers showing NV− in photoluminescence. In the present work, we use first-principles electronic structure calculations to determine adiabatic charge transition levels for the conversion of NV− to NV0 in the presence of substitutional N or P impurities, which provide the charge of the NV− center. We find that the adiabatic charge transition levels in the presence of such impurities lie at energies close to or lower than the zero-phonon line of the NV− center and that these energies only decrease as the concentration of N donors increases. This work, therefore, elucidates the absence of observed electroluminescence from the NV− and proposes a path toward observation of the phenomenon.
Abstract Transverse-magnetic-field-induced spin mixing in nitrogen-vacancy (NV) centers hybridizes the |0⟩ and | ± 1⟩ manifolds, degrading optical spin polarization and spin-dependent fluorescence and thereby limiting optically detected magnetic resonance (ODMR) contrast and quantum-sensor fidelity. While recent work has clarified key elements of NV photophysics, how spin mixing evolves with temperature under device-relevant operating conditions─and how it intertwines with charge-state dynamics─remains insufficiently quantified. Here we perform systematic magnetic-field-temperature (B-T) mapping of transverse-field-induced photoluminescence (PL) quenching in an ensemble of NV centers. By spectrally resolving the NV– and NV0 zero-phonon-line emission, we disentangle spin-mixing-driven contrast loss within NV– from correlated changes in charge-state-resolved fluorescence. We introduce an operational critical field Bc extracted from the PL-contrast line shape, which provides a compact, reproducible figure-of-merit for transverse-field robustness and enables straightforward comparison across temperatures and field geometries. The measured temperature dependence of Bc is captured by a concise model incorporating phonon-mediated excited-state orbital dynamics, establishing a predictive framework for optimizing operating conditions and benchmarking ensemble NV sensing platforms.
With the creation of nitrogen (NV) in 1b diamond it is common to find that the absorption and emission is predominantly of negatively charged NV centres. This occurs because electrons tunnel from the substitutional nitrogen atoms to NV to form NV−–N+ pairs. There can be a small percentage of neutral charge NV0 centres and a linear increase of this percentage can be obtained with optical intensity. Subsequent to excitation it is found that the line width of the NV− zero-phonon has been altered. The alteration arises from a change of the distribution of N+ ions and a modification of the average electric field at the NV− sites. The consequence is a change to the Stark shifts and splittings giving the change of the zero-phonon line (ZPL) width. Exciting the NV− centres enhances the density of close N+ ions and there is a broadening of the ZPL. Alternatively exciting and ionizing N0 in the lattice results in more distant distribution of N+ ions and a narrowing of the ZPL. The competition between NV− and N0 excitation results in a significant dependence on excitation wavelength and there is also a dependence on the concentration of the NV− and N0 in the samples. The present investigation involves extensive use of low temperature optical spectroscopy to monitor changes to the absorption and emission spectra particularly the widths of the ZPL. The studies lead to a good understanding of the properties of the NV−–N+ pairs in diamond. There is a critical dependence on pair separation. When the NV−–N+ pair separation is large the properties are as for single sites and a high degree of optically induced spin polarization is attainable. When the separation decreases the emission is reduced, the lifetime shortened and the spin polarization downgraded. With separations of <12 A0 there is even no emission. The deterioration occurs as a consequence of electron tunneling in the excited state from NV– to N+ and an optical cycle that involves NV0. The number of pairs with the smaller separations and poorer properties will increase with the number of nitrogen impurities and it follows that the degree of spin polarization that can be achieved for an ensemble of NV− in 1b diamond will be determined and limited by the concentration of single substitutional nitrogen. The information will be invaluable for obtaining optimal conditions when ensembles of NV− are required. As well as extensive measurements of the NV− optical ZPL observations of Stark effects associated with the infrared line at 1042 nm and the optically detected magnetic resonance at 2.87 GHz are also reported.
The electron spin of the negatively charged the nitrogen vacancy center $({\mathrm{NV}}^{\ensuremath{-}}$) in diamond can be optically polarized through intersystem crossing, which enables the defect to be used for quantum computation and metrology. In this work, we studied the electron spin depolarization effect of the NV center induced by charge state conversion, which was proven to be a spin-independent process. The spin-state initialization fidelity was largely affected by the charge state conversion process. As a result, the optical polarization of the electron spin decreased about 1414%(31%14) with a high-power continuous-wave (pulsed) green laser. Moreover, the undefined fluorescence anomalous saturation effect of the NV center was analyzed and explained in detail based on the spin depolarization. The results demonstrated that a weak laser should be used for initialization of the NV center. In addition, the power and polarization of a laser for NV spin detection should be carefully adjusted to obtain the highest fluorescence signal. Our work also provided information that can increase the understanding of the charge state conversion and spin polarization processes of the NV center for quantum information and sensing.