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arXiv:2604.07893

Quantum Thermal Field Effect Transistor

Abhijeet Kumar, Soniya Malik, P. Arumugam

quant-phphysics.app-phSubmitted Apr 9, 2026• Announced Apr 10, 2026• 0 citations
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Abstract

We propose and analyse a quantum thermal field-effect transistor (qtFET) composed of left-qubit, middle-qutrit, and right-qubit subsystems. In this architecture, the left qubit is coupled to the middle qutrit, which in turn interacts with the right qubit. Each subsystem interacts independently with its respective baths. The middle subsystem serves as a modulator. We have shown that the qtFET exhibits functionality analogous to that of a conventional electronic field-effect transistor (eFET). The left, right, and middle subsystems of the qtFET correspond to the drain, source, and gate of an eFET in a common gate configuration, respectively. Our results show that the qtFET can precisely modulate thermal currents, highlighting its potential as a fundamental building block for quantum thermal devices and amplifiers in emerging quantum technologies.

Comments
4 pages, 5 figures

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We propose and analyse a quantum thermal field-effect transistor (qtFET) composed of left-qubit, middle-qutrit, and right-qubit subsystems. In this architecture, the left qubit is coupled to the middle qutrit, which in turn interacts with the right qubit. Each subsystem interacts independently with its respective baths. The middle subsystem serves as a modulator. We have shown that the qtFET exhibits functionality analogous to that of a conventional electronic field-effect transistor (eFET). The left, right, and middle subsystems of the qtFET correspond to the drain, source, and gate of an eFET in a common gate configuration, respectively. Our results show that the qtFET can precisely modulate thermal currents, highlighting its potential as a fundamental building block for quantum thermal devices and amplifiers in emerging quantum technologies.
Quantum thermal field effect transistor (qtFET) composed of left-qubit, middle-qutrit, and right-qubit subsystems has been proposed and extensively analysed. In this architecture, the left qubit is coupled to the middle qutrit, which in turn interacts with the right qubit. Each subsystem interacts independently with its respective baths. The middle subsystem serves as a modulator. We have shown that the qtFET exhibits functionality analogous to that of a conventional electronic field effect transistor (eFET). The left, right, and middle subsystems of the qtFET correspond to the drain, source, and gate of an eFET in a common gate configuration, respectively. Our results show that the qtFET can precisely modulate thermal currents, highlighting its potential as a fundamental building block for quantum thermal devices and amplifiers in emerging quantum technologies. This qtFET can be used as a modulator in quantum systems with remarkable precision and can be used as a vital component in amplifiers to develop quantum devices. The integration of Bayesian optimization into the parameter optimization of quantum thermal devices has been demonstrated in this thesis. Bayesian optimization has been performed and used for parameter optimization of qtFET. qtFET has been developed to function as amplifier using optimized parameters in an analogous way to an eFET behaves as amplifier. The transconductance of qtFET has been achieved in order of ten thousands using extended search space range, while performing parameter optimization using Bayesian optimization. The amplification factor is taken as the ratio of gate transconductance and differential conductance. Then the amplification factor is optimized using extended upper bound of search space range of coupling strengths, dissipation rates, and energy levels of subsystem of qtFET which resulted in amplification factor in order of ten millions. This qtFET has been developed to detect variations in temperature at the nanoscale (10−910^{-9}10−9) using optimized parameters. In this work, a heatmap depicting the variation of the thermal current as function of middle bath temperature and interaction strength between middle and right subsystem of qtFET has been verified using first law of thermodynamics. Finally, the negative differential thermal resistance (NDTR) has been found to verify the optimized amplification factor results of qtFET in this work.
Quantum thermal field effect transistor (qtFET) composed of left-qubit, middle-qutrit, and right-qubit subsystems has been proposed and extensively analysed. In this architecture, the left qubit is coupled to the middle qutrit, which in turn interacts with the right qubit. Each subsystem interacts independently with its respective baths. The middle subsystem serves as a modulator. We have shown that the qtFET exhibits functionality analogous to that of a conventional electronic field effect transistor (eFET). The left, right, and middle subsystems of the qtFET correspond to the drain, source, and gate of an eFET in a common gate configuration, respectively. Our results show that the qtFET can precisely modulate thermal currents, highlighting its potential as a fundamental building block for quantum thermal devices and amplifiers in emerging quantum technologies. This qtFET can be used as a modulator in quantum systems with remarkable precision and can be used as a vital component in amplifiers to develop quantum devices. The integration of Bayesian optimization into the parameter optimization of quantum thermal devices has been demonstrated in this thesis. Bayesian optimization has been performed and used for parameter optimization of qtFET. qtFET has been developed to function as amplifier using optimized parameters in an analogous way to an eFET behaves as amplifier. The transconductance of qtFET has been achieved in order of ten thousands using extended search space range, while performing parameter optimization using Bayesian optimization. The amplification factor is taken as the ratio of gate transconductance and differential conductance. Then the amplification factor is optimized using extended upper bound of search space range of coupling strengths, dissipation rates, and energy levels of subsystem of qtFET which resulted in amplification factor in order of ten millions. This qtFET has been developed to detect variations in temperature at the nanoscale (10−910^{-9}10−9) using optimized parameters. In this work, a heatmap depicting the variation of the thermal current as function of middle bath temperature and interaction strength between middle and right subsystem of qtFET has been verified using first law of thermodynamics. Finally, the negative differential thermal resistance (NDTR) has been found to verify the optimized amplification factor results of qtFET in this work.
We study a quantum system composed of three interacting qubits, each coupled to a different thermal reservoir. We show how to engineer it to build a quantum device analogous to an electronic bipolar transistor. We outline how the interaction among the qubits plays a crucial role for the appearance of the effect, also linking it to the characteristics of system-bath interactions that govern the decoherence and dissipation mechanisms of the system. By comparison with previous proposals, our model extends the regime of parameters where the transistor effect occurs, the effect being more robust with respect to small variations of the coupling parameters. Moreover, our model appears to be more realistic and directly connected in terms of potential implementations to feasible setups in the domain of quantum spin chains, such as molecular nanomagnets.
A quantum thermal transistor is designed by the strong coupling between one qubit and one qutrit which are in contact with three heat baths with different temperatures. The thermal behavior is analyzed based on the master equation by both the numerical and the approximately analytic methods. It is shown that the thermal transistor, as a three-terminal device, allows a weak modulation heat current (at the modulation terminal) to switch on and off and effectively modulate the heat current between the other two terminals. In particular, the weak modulation heat current can induce the strong heat current between the other two terminals with the multiple-region amplification of heat current. Furthermore, the heat currents are quite robust to the temperature (current) fluctuation at the lower-temperature terminal within a certain range of temperature, and so it can behave as a heat current stabilizer.
Abstract We investigate the performance of a three-qubits quantum thermal transistor using coarse-graining, global, and local master equations, respectively. Special attention is paid to the validity of the three methods in different internal coupling strengths. The effects of system and bath parameters on the amplification effect are studied. It is found that small middle qubit frequency, weak internal coupling, and symmetric configuration of system-bath coupling lead to large amplification factor. The heat current amplification mechanism is discussed and quantum coherence does not contribute to amplification. Besides, the thermal transistor is realized by tuning the temperature of the middle bath, the temperature of the left bath, or the internal coupling strength.
Logical devices based on electrical currents are ubiquitous in modern society. However, digital logic does have some drawbacks, such as a relatively high power consumption. It is, therefore, of great interest to seek alternative means to build logical circuits that can either work as stand-alone devices or in conjunction with more traditional electronic circuits. One direction that holds great promise is the use of heat currents for logical components. In the present paper, we discuss a recent abstract proposal for a quantum thermal transistor and provide a concrete design of such a device using superconducting circuits. Using a circuit quantum electrodynamics Jaynes-Cummings model, we propose a three-terminal device that allows heat transfer from source to drain, depending on the temperature of a bath coupled at the gate modulator and show that it provides similar properties to a conventional semiconductor transistor.