Orbitally resolved single-photon emission from an individual atomic vacancy center in a semiconductor
Gagandeep Singh, Xiaodan Lyu, Bi Qi Chong, Ryan Li Yen Tang, Rejaul SK, Yande Que, Ranjith Shivajirao, Thasneem Aliyar, Radha Krishnan, Junxiang Jia, Michael S. Fuhrer, Teck Seng Koh, Weibo Gao, Bent Weber
cond-mat.mes-hallphysics.opticsquant-phSubmitted Feb 27, 2026• Announced Mar 2, 2026• 0 citations
Atomically confined spins are emerging as active components in quantum optoelectronic devices such as quantum bits and sensors. However, interrogating single spins at atomic length-scales remains a sizeable challenge, limited by diffraction in conventional optics. Here we show that the highly-local excitation provided by injecting energetic charge carriers from the atomically sharp probe of a scanning tunneling microscope can trigger single-photon emission from individual atomic vacancy centers in a layered semiconductor. With an effective spatial resolution of <1 nm, we show that the captured light closely mirrors the orbital symmetry of the bound-state wavefunction of the vacancy center while photon correlation measurements confirm single-photon emission, as reflected in clear photon anti-bunching signatures. Our results constitute an important step toward the realization of an electrically addressable single-atom quantum light source and solid-state spinphoton interface, addressed at the atomic-scale.
Atomically confined spins are emerging as active components in quantum optoelectronic devices such as quantum bits and sensors. However, interrogating single spins at atomic length-scales remains a sizeable challenge, limited by diffraction in conventional optics. Here we show that the highly-local excitation provided by injecting energetic charge carriers from the atomically sharp probe of a scanning tunneling microscope can trigger single-photon emission from individual atomic vacancy centers in a layered semiconductor. With an effective spatial resolution of <1 nm, we show that the captured light closely mirrors the orbital symmetry of the bound-state wavefunction of the vacancy center while photon correlation measurements confirm single-photon emission, as reflected in clear photon anti-bunching signatures. Our results constitute an important step toward the realization of an electrically addressable single-atom quantum light source and solid-state spinphoton interface, addressed at the atomic-scale.
We report on the experimental demonstration of single-photon state generation and characterization in an electron microscope. In this aim we have used low intensity relativistic (energy between 60 and 100 keV) electrons beams focused in a ca. 1 nm probe to excite diamond nanoparticles. This triggered individual neutral nitrogen-vacancy centers to emit photons which could be gathered and sent to a Hanbury Brown-Twiss intensity interferometer. The detection of a dip in the correlation function at small time delays clearly demonstrates antibunching and thus the creation of nonclassical light states. Specifically, we have also demonstrated single-photon states detection. We unveil the mechanism behind quantum states generation in an electron microscope, and show that it clearly makes cathodoluminescence the nanometer scale analog of photoluminescence. By using an extremely small electron probe size and the ability to monitor its position with subnanometer resolution, we also show the possibility of measuring the quantum character of the emitted beam with deep subwavelength resolution.
For quantum information applications, nitrogen-vacancy (NV) centers in diamond combine many of the advantages of atomic systems (optical access, millisecond spin-coherence times) with the engineering flexibility of solid-state devices. Recent demonstrations of coherent coupling between photons and individual NV-center spins [1,2] provide a route to integrating NV-center qubits within photonic networks and for on-demand generation of entangled single-spin/single-photon pairs. Such applications require the ability to tune the NV-center zero-phonon optical transitions, to compensate for natural sample inhomogeneities which perturb the electronic orbital states. Here we demonstrate the ability to electrically control the orbitals of individual NV centers by applying voltages to micron-scale surface gates [3]. Surprisingly, the local electric field experienced by an NV center is significantly enhanced by a photoinduced space charge resulting from photoionization of deep donor impurities within the diamond, even in high-purity single-crystal material (< 5 ppb nitrogen content). Since the photoinduced electric fields are reproducible as a function of gate voltage and are predominantly directed perpendicular to the diamond surface, we can harness them to obtain three-dimensional control of the local electric field vector with surface gates alone. To demonstrate this technique, we tune the excited-state orbital doublet of a strained NV center to degeneracy, as required for some spin-photon entanglement protocols [2], and then adjust the optical transition frequency, showing that we can tune multiple NV centers to have the same degenerate transition energy. This method should enable the coherent coupling of multiple NV center spins to indistinguishable photons within a scalable photonic network.
Individual spin defects in solids are promising building blocks for quantum technologies, but their deterministic creation, individual addressability, and operation near surfaces remain major challenges. Two-dimensional materials provide an attractive alternative, as their single-layer thickness enables direct atomic-scale access to defect states. Here, we demonstrate single-spin control of solid-state defects in a two-dimensional semiconductor by a combination of scanning tunneling microscopy and electron spin resonance. We create and manipulate individual sulfur vacancies and carbon substitution defects in monolayer molybdenum disulfide and characterize their spin dynamics, including coherent control, at the single-defect level. Using atomic manipulation, we further engineer and probe spin-spin interactions between defect pairs. Our results demonstrate deterministic creation, addressability, coherent manipulation, and controlled coupling of individual spin defects within a single experimental platform. This establishes atomically engineered spin defects in two-dimensional semiconductors as a versatile class of controllable solid-state quantum systems and opens a route towards tailored quantum sensing experiments.
Electrically spin-injected ensembles of InGaAs/GaAs quantum dots emit circularly polarized single photons, with the emission helicity determined by the spin polarization of the injected electrons. A ferromagnetic CoFeB spin-injection layer with perpendicular magnetic anisotropy, combined with an MgO tunnel barrier, enables spin-polarized electron injection into the quantum-dot active region, resulting in circularly polarized photon emission at zero applied magnetic field. These devices realize direct spin-charge-photon conversion in an electrically driven, microelectronics-compatible quantum light source that operates without an external pump laser. Using an extended Hanbury Brown-Twiss interferometer with four detectors and time-tagged readout, we measure time-resolved photon-number statistics that resolve up to ∣2⟩ Fock states within a single excitation cycle. While single-photon (n=∣1⟩) emission tracks the electrical excitation pulse as expected, the two-photon (n=∣2⟩) statistics exhibit pronounced fluctuations at multiple temporal positions within the pulse. These fluctuations vanish upon demagnetization of the spin-injection layer, establishing a direct link between the multi-photon emission dynamics and the spin polarization of the injected carriers. The observations indicate that spin injection controls not only the helicity of the emitted photons but also higher-order temporal correlations of the emission. The behavior is phenomenologically captured by inserting both a variable excitation mechanism and a set of multi-emitter collapse operators within a stochastic wave function evolution. The platform thus opens a route to electrically driven, spin-controlled single and multi-photon Fock-state sources and provides a testbed for spin-conditioned multi-emitter dynamics in solid-state quantum light sources.
Single spins confined in semiconductor quantum dots - artificial atoms in the solid-state - are attractive candidates for quantum mechanical bits, the fundamental units and building blocks of a quantum computer. The ability to address quantum dot spins optically allows us to initialise and manipulate the state of the quantum bit. Gaining information on the qubit, for example by reading out its state, not only requires state-selective optical excitation, but also access to the single photons scattered in response by the quantum dot. Further, for a distributed computer architecture where nodes of few quantum bits are interlinked via optical communication channels photonic quantum bits are required to faithfully transmit the quantum information. In this thesis we advocate resonant excitation of quantum dot transitions and collection of the resonance fluorescence to address two outstanding challenges: generating dephasing-free single photons for use as flying quantum bits and single-shot spin readout. To this end we investigate the spectral and first-order coherence properties of quantum dot resonance fluorescence. In particular, we directly observe highly coherent scattering in the low Rabi frequency limit which has remained unexplored for solid-state single photon emitters so far. At the same time, interactions with the semiconductor environment are revealed and quantified through their optical signatures: exciton-phonon coupling, nuclear spin dynamics and local electric field fluctuations signal a departure from the ideal atom-like behaviour. Taking advantage of the laser-like coherence of single phase-locked quantum dot photons in the Heitler regime, we demonstrate near-ideal two-photon quantum interference. This benchmark measurement is a precursor for the photonic entanglement of distant quantum dot spins in a quantum optical network, and the results here predict a high fidelity operation. Finally, moving to tunnel-coupled quantum dot molecules we show that the overlap of carrier wave functions in two closely spaced quantum dots forms new spin-selective optical transitions not available in single quantum dots. Then, the presence or absence of scattered photons reveals the electron spin. Intermittency in the quantum dot resonance fluorescence allowed us, for the first time, to observe spin quantum jumps in real-time. Both achievements - highly coherent photons and spin readout - provide the missing link to attempt creation of a small-scale quantum network now.
We experimentally demonstrate precision addressing of single-quantum emitters by combined optical microscopy and spin resonance techniques. To this end, we use nitrogen vacancy (NV) color centers in diamond confined within a few ten nanometers as individually resolvable quantum systems. By developing a stochastic optical reconstruction microscopy (STORM) technique for NV centers, we are able to simultaneously perform sub-diffraction-limit imaging and optically detected spin resonance (ODMR) measurements on NV spins. This allows the assignment of spin resonance spectra to individual NV center locations with nanometer-scale resolution and thus further improves spatial discrimination. For example, we resolved formerly indistinguishable emitters by their spectra. Furthermore, ODMR spectra contain metrology information allowing for sub-diffraction-limit sensing of, for instance, magnetic or electric fields with inherently parallel data acquisition. As an example, we have detected nuclear spins with nanometer-scale precision. Finally, we give prospects of how this technique can evolve into a fully parallel quantum sensor for nanometer resolution imaging of delocalized quantum correlations.