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arXiv:2602.10690

Magneto-optical properties of the neutral silicon-vacancy center in diamond under extreme isotropic strain fields

Meysam Mohseni, Gergő Thiering, Adam Gali

quant-phcond-mat.mtrl-sciSubmitted Feb 11, 2026• Announced Feb 12, 2026• 0 citations
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Abstract

The neutral silicon--vacancy (SiV$^{0}$) center in diamond combines inversion symmetry with optical emission, making it a robust quantum emitter resilient to stray electric fields. Using first-principles density-functional theory, we quantify its response to isotropic strain spanning strong compression and tensile regimes (effective hydrostatic pressures of approximately $-80$ to $180$~GPa). The coexistence of doubly degenerate $e_g$ and $e_u$ levels produces a structural instability captured by a quadratic product Jahn--Teller model. Under isotropic compression, the zero-phonon line blue-shifts nearly linearly while the $E_g$ phonon stiffens, suppressing vibronic instabilities and reducing Jahn--Teller quenching. Consequently, the Ham-reduced excited-state spin--orbit splitting increases substantially and the dark--bright vibronic gap widens. In contrast, isotropic tensile strain enhances vibronic effects and induces symmetry breaking beyond a critical strain, with tunneling-mediated dynamical averaging at the onset. Throughout the symmetry-preserving regime, parity remains well defined, so isotropic strain alone does not activate the dark transition. Charge-transition levels indicate photostability of the emission deep into the compressive regime, and near the highest photostable deformation ($\sim 100$~GPa), the radiative lifetime increases due to a reduced transition dipole moment despite the increasing optical energy. These trends yield compact calibration relations linking optical and spin observables to isotropic strain and establish SiV$^{0}$ as a symmetry-protected, strain-tunable quantum emitter operating into the multi-megabar-equivalent regime.

Comments
10 pages, 5 figures, 3 tables

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The neutral silicon--vacancy (SiV0^{0}0) center in diamond combines inversion symmetry with optical emission, making it a robust quantum emitter resilient to stray electric fields. Using first-principles density-functional theory, we quantify its response to isotropic strain spanning strong compression and tensile regimes (effective hydrostatic pressures of approximately −80-80−80 to 180180180~GPa). The coexistence of doubly degenerate ege_geg​ and eue_ueu​ levels produces a structural instability captured by a quadratic product Jahn--Teller model. Under isotropic compression, the zero-phonon line blue-shifts nearly linearly while the EgE_gEg​ phonon stiffens, suppressing vibronic instabilities and reducing Jahn--Teller quenching. Consequently, the Ham-reduced excited-state spin--orbit splitting increases substantially and the dark--bright vibronic gap widens. In contrast, isotropic tensile strain enhances vibronic effects and induces symmetry breaking beyond a critical strain, with tunneling-mediated dynamical averaging at the onset. Throughout the symmetry-preserving regime, parity remains well defined, so isotropic strain alone does not activate the dark transition. Charge-transition levels indicate photostability of the emission deep into the compressive regime, and near the highest photostable deformation (∼100\sim 100∼100~GPa), the radiative lifetime increases due to a reduced transition dipole moment despite the increasing optical energy. These trends yield compact calibration relations linking optical and spin observables to isotropic strain and establish SiV0^{0}0 as a symmetry-protected, strain-tunable quantum emitter operating into the multi-megabar-equivalent regime.
Hydrostatic deformation is an effective approach for tuning the quantum properties of color centers in diamond, with significant implications for quantum sensing, computing, and communication. Compared to the widely studied nitrogen-vacancy (NV) centers, silicon-vacancy (SiV) centers exhibit more than a tenfold increase in coherent photon emission. In this work, we investigate the effects of hydrostatic pressure and tension on the SiV center in diamond using first-principles calculations with the r2SCAN meta-GGA (Generalized Gradient Approximation) functional. We demonstrate that under hydrostatic tension corresponding to an isotropic expansion exceeding 4%, the SiV center undergoes spontaneous symmetry breaking from the inversion-symmetric D3d structure to the asymmetric C3v configuration, similar to that of the NV center. Within the hydrostatic compression and tension range corresponding to isotropic deformations of −8%–4%, the optical properties and hyperfine parameters of the SiV center change monotonically, indicating promising potential for pressure- or deformation-sensing applications. A microscopic explanation of these trends is provided from an electronic structure perspective. The r2SCAN meta-GGA functional shows high accuracy in calculating hyperfine parameters, in agreement with experimental results. This study enhances our understanding of the optical properties and hyperfine interactions of SiV defects in diamond, laying the groundwork for their potential use in hydrostatic pressure or strain sensing applications.
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We report the development of an experimental approach that can characterize the energy level structure of an individual silicon vacancy (SiV) center in a magnetic field and extract the key parameters for the energy level structure. This approach builds upon a theoretical model that includes effects of the static strain, dynamic Jahn-Teller coupling, and magnetic field and introduces two coupling rates, one each for the ground and the excited states, to characterize the combined effects of strain and Jahn-Teller coupling. With the use of an analytical expression for the energy level structure of the SiV center under a transverse magnetic field, these two coupling rates can be directly derived from the measurement of the frequency separation between two spin-conserved transitions in a photoluminescence excitation spectrum and the measurement of the coherent population trapping resonance related to the SiV ground spin states. Additional experimental studies on the dependence of the energy level structure on the magnetic field amplitude and direction further verify the theoretical model and reveal contributions from unequal orbital magnetic coupling for the ground and excited states.
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The silicon-vacancy (SiV) color center in diamond is a solid-state single photon emitter and spin quantum bit suited as a component in quantum devices. Here, we show that SiV centers in nanodiamonds exhibit a strongly inhomogeneous distribution with regard to the center wavelengths and linewidths of the zero-phonon-line (ZPL) emission at room temperature. We find that the SiV centers separate in two clusters: one group exhibits ZPLs with center wavelengths within a narrow range ≈730–742 nm and broad linewidths between 5 and 17 nm, whereas the second group comprises a very broad distribution of center wavelengths between 715 and 835 nm, but narrow linewidths from below 1 up to 4 nm. Supported by ab initio Kohn–Sham density functional theory calculations we show that the ZPL shifts of the first group are consistently explained by strain in the diamond lattice. Further, we suggest, that the second group showing the strongly inhomogeneous distribution of center wavelengths might be comprised of a new class of silicon-related defects. Whereas single photon emission is demonstrated for defect centers of both clusters, we show that emitters from different clusters show different spectroscopic features such as variations of the phonon sideband spectra and different blinking dynamics.
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