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arXiv:2601.12421 · Scientific Reports

Saturable absorption in NV-doped diamond studied by femtosecond Z-scan

Wojciech Talik, Mariusz Mrózek, Adam M. Wojciechowski, Krzysztof Dzierżęga

Published Aug 18, 2026• 1 citation
arXivHTMLPDF

Abstract

Nonlinear optical absorption in commercially available diamond crystals containing nitrogen-vacancy (NV) centers is investigated using femtosecond open-aperture Z-scan measurements at a wavelength of 1032 nm. Experiments were performed on a high-purity electronic-grade diamond and on samples with moderate and high NV concentrations. While the undoped crystal exhibits third-order nonlinear absorption, the NV-doped samples show a pronounced saturable absorption response. To elucidate the microscopic origin of this effect, the Z-scan results are analysed in conjunction with linear transmission spectra, which reveal the presence of additional nitrogen-related defect complexes, including H2 ( \(\hbox {NVN}^{-}\) ) centers. Although the excitation wavelength is detuned from the principal zero-phonon lines of both NV and H2 defects, it overlaps with the broader near-infrared absorption band associated with vibronic transitions. A quantitative analysis based on an effective two-level model indicates that the observed saturable absorption is most consistently explained by a dominant contribution from H2 defects, while a weaker off-resonant contribution from NV centers cannot be excluded. The extracted parameters, including the linear absorption coefficient and saturation intensity, are supported by a reconstruction of the defect-related absorbance spectrum and by consistency with previously reported nonlinear refractive index data. These results highlight the importance of complex defect environments in determining the nonlinear optical response of NV-doped diamond and provide insight into defect-specific contributions relevant for diamond-based nonlinear and quantum photonic applications.

DOI
10.1038/s41598-026-66816-3

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Nonlinear optical absorption in commercially available diamond crystals containing nitrogen-vacancy (NV) centers is investigated using femtosecond open-aperture Z-scan measurements at a wavelength of 1032 nm. Experiments were performed on a high-purity electronic-grade diamond and on samples with moderate and high NV concentrations. While the undoped crystal exhibits third-order nonlinear absorption, the NV-doped samples show a pronounced saturable absorption response. To elucidate the microscopic origin of this effect, the Z-scan results are analysed in conjunction with linear transmission spectra, which reveal the presence of additional nitrogen-related defect complexes, including H2 ( (\hbox {NVN}^{-}) ) centers. Although the excitation wavelength is detuned from the principal zero-phonon lines of both NV and H2 defects, it overlaps with the broader near-infrared absorption band associated with vibronic transitions. A quantitative analysis based on an effective two-level model indicates that the observed saturable absorption is most consistently explained by a dominant contribution from H2 defects, while a weaker off-resonant contribution from NV centers cannot be excluded. The extracted parameters, including the linear absorption coefficient and saturation intensity, are supported by a reconstruction of the defect-related absorbance spectrum and by consistency with previously reported nonlinear refractive index data. These results highlight the importance of complex defect environments in determining the nonlinear optical response of NV-doped diamond and provide insight into defect-specific contributions relevant for diamond-based nonlinear and quantum photonic applications.
We investigate the effect of nitrogen-vacancy (NV) centers in single crystal diamond on nonlinear optical effects using 40 fs femtosecond laser pulses. The near infrared femtosecond pulses allow us to study purely nonlinear optical effects, such as optical Kerr effect (OKE) and two-photon absorption (TPA), relating to unique optical transitions by electronic structures with NV centers. It is found that both the nonlinear optical effects are enhanced by the introduction of NV centers in the N+^{+}+ dose levels of 2.0$\times101010^{11}$ and 1.0$\times101010^{12}$ N+^{+}+/cm2^{2}2. In particular, our data demonstrate that the OKE signal is strongly enhanced for the heavily implanted type-IIa diamond. We suggest that the strong enhancement of the OKE is possibly originated from cascading OKE, where the high-density NV centers effectively break the inversion symmetry near the surface region of diamond.
Diamond is a leading quantum photonics platform due to its ability to host qubits based on crystal defects such as nitrogen-vacancy centres. Fabricating nanophotonic devices from defect-rich diamond, which underpins many quantum sensing technologies, promises enhanced performance and integrability of diamond quantum sensors. Here we demonstrate microdisk cavities fabricated from defect-rich diamond that support optical modes with high quality factor (Q∼7×104{Q}\sim7\times10^4Q∼7×104 at 1042 1042\,1042nm) and show that they exhibit saturable absorption. Power-dependent spectroscopy measurements spanning 979 \,nm to 1604 \,nm are used to observe intensity-dependent cavity loss and extract wavelength-dependent absorption coefficients and saturation intensities. At 1047 \,nm, we observe saturation and measure a saturation intensity of 2.1 (8) 2.1\,(8)\,2.1(8)MW/cm2^22 and an absorption coefficient of 0.53 (2) 0.53\,(2)\,0.53(2)cm−1^{-1}−1. These results provide insight into defect-mediated optical loss in diamond nanophotonics and suggest strategies to harness defect-induced nonlinearities in future diamond photonic devices.
We report on the spectroscopic and laser characterization of negatively charged nitrogen-vacancy (NV−) centers in diamond. Spectroscopic properties such as absorption and emission spectra as well as kinetics were studied, and parameters such as cross-sections and lifetimes were estimated. A vibronic band of NV0 with zero phonon line (ZPL) at 575 nm was detected under 532 nm pulsed excitation due to the photoionization of NV−. Transmission of 532 nm pump pulses saturate around ∼10%, which is much smaller than the theoretical level. Δk/k0 kinetics revealed slow recovery of NV− centers after photoionization under 532 nm pumping, which involved different relaxation channels depending on the probe beam wavelengths. Localization of the electrons in the metastable state of NV0 centers resulted in higher saturated transmission of 632 nm pump.
Nitrogen-vacancy (NV) centers in single-crystal CVD diamond are promising candidates for quantum sensing due to their remarkable optical and spin properties [1]. These defects exhibit stable photoluminescence (PL), long spin coherence times, and high sensitivity to external fields [2]. In this study, we present a room-temperature PL characterization of NV centers excited with a 532 nm laser. The setup was optimized for high signal-to-noise ratio and spectral resolution. Key parameters analyzed include emission intensity, zero-phonon line (ZPL) at ~637 nm, phonon sidebands, and the charge state distribution between NV⁰ and NV⁻. The NV⁻ state, crucial for spin-based sensing, is evaluated to understand its stability under different nitrogen doping conditions [3]. The relative intensities of NV⁰ and NV⁻ provide insights into nitrogen incorporation and vacancy formation. These results contribute to optimizing synthesis conditions for enhanced NV⁻ concentration, supporting the advancement of diamond-based quantum sensing technologies.
Diamond color centers such as the nitrogen-vacancy (NV) center have been extensively studied as a popular platform that enables quantum sensing and computing applications. For highly sensitive sensing NV ensembles have significantly stronger signals than individual NV centers and can create strong light fields, which are also essentially required by novel concepts that need a large sensing volume, such as cavity coupling and readout, laser threshold magnetometry and multi-pass geometries. On top of strong signals, low optical material losses are the other key consideration for these techniques, by means of low optical absorption of signal light and low birefringence of the diamond crystal. In this work, we study systematically the behavior of absorption in the NV emission range around 700nm and birefringence with increasing nitrogen- and NV-doping, as well as their behavior during NV creation via diamond growth, electron beam irradiation and annealing treatments. Absorption correlates with increased nitrogen-doping yet single substitutional nitrogen atoms (Ns0 or P1 centers) do not seem to be the direct absorber. The high nitrogen doping level in the growth leads to high absorption in the whole UV-Vis range, which is the main contributors to the high absorption at 700 nm. When treating the diamond for an enhanced NV concentration, ‘over irradiating’ the diamond with too high fluence is harmful in the sense of creating neutral vacancies that increase absorption at the wavelength range of interest. Opposite to the absorption, birefringence reduces with increasing nitrogen doping and shows better homogeneity. After-growth treatments show a minor and if any a positive (i.e. reducing) influence on diamond birefringence. Multiple crystal defect concentrations and their changes are identified via absorption spectroscopy during the material processing steps and thus we identify potential causes of absorption and birefringence. From this we suggest strategies to fabricate CVD diamonds with high NV density yet low absorption and low birefringence
Abstract Nitrogen-vacancy (NV) defect centers in diamond are key to applications in quantum sensing and quantum computing. They create localized electronic states in the diamond lattice with distinct population relaxation pathways following photoexcitation that ultimately enable its unique properties. The defect is known to exist in two charge states: neutral and negative, with respectively one and two known optically-active electronic transitions. Here, we report on the observation of a large number of hitherto undiscovered excited electronic states in both charge states as evidenced by distinct optical transitions in the infrared to ultraviolet part of the spectrum. These transitions are observed by monitoring the electronic relaxation of NV centers after photoexcitation using transient absorption spectroscopy, directly probing transient phenomena occurring on timescales from femtoseconds to microseconds. We also for the first time probed the electron transfer dynamics from the 3 E state of NV− to nearby single-substitutional nitrogen defects (N s ) that leads to the well-known effect of NV photoluminescence quenching.