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arXiv:2511.15922

Selective Shuttling of Electrons on Helium Using a CMOS Control Platform

Kyle E. Castoria, Heejun Byeon, N. R. Beysengulov, E. O. Glen, Sammon, M., J. Pollanen, D. G. Rees, S. A. Lyon

Published Nov 19, 2025• 0 citations
arXivHTMLPDF

Abstract

Electrons bound to the surface of liquid helium are an emerging quantum computing platform, offering the potential for highly mobile spin qubits that can be manipulated using CMOS-fabricated devices. Here, as a step toward realizing this technology, we demonstrate selective two-dimensional shuttling of electrons across a helium film condensed on the surface of a CMOS control chip. The electrons are moved in packets containing, on average, several tens down to single electrons. We perform CCD-style electron shuttling in any of 128 transport microchannels, each of which links electron storage zones and sensing zones in the 2D plane. Shuttling sequences can be repeated at least 10$^9$ times with no detectable electron loss. The device serves as a prototype quantum information processing platform that is readily scalable to control large monolithically integrated arrays of single electron spins.

DOI
10.48550/arxiv.2511.15922

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Electrons bound to the surface of liquid helium are an emerging quantum computing platform, offering the potential for highly mobile spin qubits that can be manipulated using CMOS-fabricated devices. Here, as a step toward realizing this technology, we demonstrate selective two-dimensional shuttling of electrons across a helium film condensed on the surface of a CMOS control chip. The electrons are moved in packets containing, on average, several tens down to single electrons. We perform CCD-style electron shuttling in any of 128 transport microchannels, each of which links electron storage zones and sensing zones in the 2D plane. Shuttling sequences can be repeated at least 109^99 times with no detectable electron loss. The device serves as a prototype quantum information processing platform that is readily scalable to control large monolithically integrated arrays of single electron spins.
Electrons on the surface of superfluid helium have extremely high mobilities and long predicted spin coherence times, making them ideal mobile qubits. Previous work has shown that electrons localized in helium filled channels can be reliably transported between multiple underlying gates. Silicon chips have been designed, fabricated, and post processed by reactive ion etching to leverage the large scale integration capabilities of silicon technology. These chips, which serve as substrates for the electrons on helium research, utilize silicon CMOS for on-chip signal amplification and multiplexing and the uppermost metal layers for defining the helium channels and applying electrical potentials for moving the electrons. We will discuss experimental results for on-chip circuitry and clocked electron transport along etched channels.
Electrons trapped on the surface of superfluid helium have been thought of as a useful resource for quantum computing. Such electrons show long coherence of their surface-bound (Rydberg) states combined with their easy electrostatic manipulation. Recent proposals have explored the possibility of coupling the spin state of an electron and the state of its quantized motion, with the promise of a highly scalable two-dimensional architecture for a quantum computer. However, despite recent progress in the detection of quantized lateral motion of electrons using a circuit-QED setup, manipulation of a small number of electrons and their quantum state detection remains a challenging problem. Here, we report on the detection of the Rydberg transition of electrons on superfluid helium in an on-chip microchannel device in which electrons are moved and trapped by a set of electrostatic gates. A highly sensitive image-charge detection system allows us to not only resolve the transition spectra of such electrons, but also perform the device characterization. The demonstrated sensitivity shows the feasibility of detecting the Rydberg transition of a single electron, which can open an alternate pathway for a nondestructive spin-state readout.
Electrons trapped on the surface of cryogenic substrates (liquid helium, solid neon, or hydrogen) are an emerging platform for quantum information processing made attractive by the inherent purity of the electron environment, the scalability of trapping devices, and the predicted long lifetime of electron spin states. Here we demonstrate the spatial control and detection of single electrons above the surface of liquid helium at temperatures above 1 K. A superconducting coplanar waveguide resonator is used to read out the charge state of an electron trap defined by gate electrodes beneath the helium surface. Dispersive frequency shifts are observed as the trap is loaded with electrons, from several tens down to single electrons. These frequency shifts are in good agreement with our theoretical model that treats each electron as a classical oscillator coupled to the cavity field. This sensitive charge readout scheme can aid efforts to develop large-scale quantum processors that require the high cooling powers available in cryostats operating above 1 K.
Abstract Small spin-qubit registers defined by single electrons confined in Si/SiGe quantum dots operate successfully and connecting these would permit scalable quantum computation. Shuttling the qubit carrying electrons between registers is a natural choice for high-fidelity coherent links provided the overhead of control signals stays moderate. Our proof-of-principle demonstrates shuttling of a single electron by a propagating wave-potential in an electrostatically defined 420 nm long Si/SiGe quantum-channel. This conveyor-mode shuttling approach requires independent from its length only four sinusoidal control signals. We discuss the tuning of the signal parameters, detect the smoothness of the electron motion enabling the mapping of potential disorder and observe a high single-electron shuttling fidelity of 99.42 ± 0.02% including a reversal of direction. Our shuttling device can be readily embedded in industrial fabrication of Si/SiGe qubit chips and paves the way to solving the signal-fanout problem for a fully scalable semiconductor quantum-computing architecture.
Unprecedented transport efficiency is demonstrated for electrons on the surface of micron-scale superfluid helium-filled channels by co-opting silicon processing technology to construct the equivalent of a charge-coupled device.Strong fringing fields lead to undetectably rare transfer failures after over a billion cycles in two dimensions.This extremely efficient transport is measured in 120 channels simultaneously with packets of up to 20 electrons, and down to singly occupied pixels.These results point the way towards the large scale transport of either computational qubits or electron spin qubits used for communications in a hybrid qubit system.
Quantum sensors that harness quantum coherence and entanglement are emerging as powerful tools in many fields, including particle physics, promising unprecedented sensitivity beyond classical detection methods. At the same time, electrons trapped on the surface of liquid helium have emerged as a promising quantum computing, and possibly sensing, platform owing to a nearly impurity-free environment and large predicted coherence times. In this context, single-electron confinement and control using microfabricated traps on helium has been experimentally demonstrated, highlighting the feasibility of scalable qubit architectures on this platform. In line with the DRD5 initiative at CERN, we propose here a sensor concept that uses an entangled pair of electron qubits on superfluid helium for particle physics experiments. We outline the motivation for such spatially and spin-entangled sensors, develop the theoretical formalism for two electrons and their spins and spatial degrees of freedom in a helium-based double-well trap (analogous to a double quantum dot in semiconductor systems), and discuss the potential advantages for detecting rare high-energy events with quantum-enhanced sensitivity. By exploiting quantum entanglement between the two trapped electrons, this sensor concept can surpass classical sensitivity limits, potentially enabling the detection of signals beyond the reach of classical detectors.