The presence of interfaces in semiconductor devices substantially hinders thermal transport, contributing disproportionately to the overall thermal resistance. However, approaches to enhance interfacial thermal transport remain scarce without changing the interface structure, as the intrinsic electron and phonon properties of constituent materials set an upper limit. Here, we find a new thermal transport pathway, electronic heat tunneling, to enhance interfacial thermal conductance through metal-insulator-semiconductor junctions. By applying photoexcitation or bias voltage, we observe remarkable thermal conductance increases in operando, opening a new channel for efficient interfacial heat dissipation. The electron quantum tunneling pathway is parallel to conventional phonon-mediated interfacial thermal transport, and violates the Wiedemann-Franz law since this pathway deviates from the paradigm of diffusive transport. Moreover, we develop a tunneling mismatch model to describe the enhanced thermal conductance, originating from tunneling heat flux. Our Letter demonstrates a previously unexplored heat transport mechanism to enhance thermal conductance, bypassing the need for interface engineering. These findings emphasize the essential need to understand semiconductor thermal properties under realistic operating conditions.
The presence of interfaces in semiconductor devices substantially hinders thermal transport, contributing disproportionately to the overall thermal resistance. However, approaches to enhance interfacial thermal transport remain scarce without changing the interface structure, as the intrinsic electron and phonon properties of constituent materials set an upper limit. Here, we find a new thermal transport pathway, electronic heat tunneling, to enhance interfacial thermal conductance through metal-insulator-semiconductor junctions. By applying photoexcitation or bias voltage, we observe remarkable thermal conductance increases in operando, opening a new channel for efficient interfacial heat dissipation. The electron quantum tunneling pathway is parallel to conventional phonon-mediated interfacial thermal transport, and violates the Wiedemann-Franz law since this pathway deviates from the paradigm of diffusive transport. Moreover, we develop a tunneling mismatch model to describe the enhanced thermal conductance, originating from tunneling heat flux. Our Letter demonstrates a previously unexplored heat transport mechanism to enhance thermal conductance, bypassing the need for interface engineering. These findings emphasize the essential need to understand semiconductor thermal properties under realistic operating conditions.
The celebrated Wiedemann-Franz (WF) law is believed to be robust in metals as long as interactions between electrons preserve their fermion-quasiparticle character. We study thermal transport and the fate of the WF law close to a continuous metal-insulator transition (MIT) in the Falicov-Kimball model (FKM) using cluster-dynamical mean-field theory (CDMFT). Surprisingly, as for electrical transport, we find robust and novel quantum critical scaling in thermal transport across the MIT. We unearth the deeper reasons for these novel findings in terms of (i) the specific structure of energy-current correlations for the FKM and (ii) the microscopic electronic processes which facilitate energy transport while simultaneously blocking charge transport close to the MIT. However, within (C)DMFT, we also find that the WF law survives at $T\ensuremath{\longrightarrow}0$ in the incoherent metal right up to the MIT, even in absence of Landau quasiparticles.
We investigate the photon-mediated thermal transport between a superconducting electrode and a normal metal. When the quasiparticle contribution can be neglected, the photon-mediated channel becomes an efficient heat transport relaxation process for the superconductor at low temperatures, being larger than the intrinsic contribution due to the electron–phonon interaction. Furthermore, the superconductor–normal metal system acts as a nearly perfect thermal diode, with a rectification factor up to 108 for a realistic aluminum superconductor. The rectification factor can also be tuned in a phase-controlled fashion through a non-galvanic coupling, realized by changing the magnetic flux piercing a superconducting quantum interference device, which modifies the coupling impedance between the superconductor and the normal metal. The scheme can be exploited for passive cooling in superconducting quantum circuits by transferring heat toward normal metallic pads where it dissipates more efficiently or for more general thermal management purposes.
Quantum heat transport governs energy exchange processes and statistical laws in non-equilibrium quantum systems, and plays a pivotal role in quantum thermodynamics. We investigate the steady-state thermal transport of a noncommuting coupled spin system. We employ the quantum dressed master equation approach within the framework of open quantum system theory to accurately analyze the non-equilibrium dynamics, ensuring the validity of transport results in the strong coupling regime. Our results demonstrate that noncommuting spin coupling serves as a significant resource for modulating the nonlinearity of the heat current. Specifically, in the weak spin-coupling regime, the system exhibits robust negative differential thermal conductance (NDTC) across various spin numbers. By deriving analytical expressions for the heat current in both the single-spin and large-spin limits, we reveal that this NDTC behavior is governed by microscopic cycle fluxes. Physically, this arises because spin excitation channels induced by the cold reservoir are suppressed under a large temperature bias, thereby blocking energy exchange cycles. Conversely, in the strong spin-coupling and large temperature bias regime, the quantum system demonstrates pronounced thermal rectification. This high rectification efficiency originates from the unidirectional saturation of the heat current, rendering the system a promising candidate for high-performance thermal diodes. Furthermore, we extend the model to a three-terminal configuration to construct a quantum thermal transistor. By manipulating the temperature of the gate reservoir, we achieve efficient modulation and amplification of heat flow between the source and drain. The heat amplification factor is shown to far exceed unity in specific operating regions, confirming significant thermal amplification.
The emerging quantum technological apparatuses [1,2], such as the quantum computer [3-5], call for extreme performance in thermal engineering at the nanoscale [6]. Importantly, quantum mechanics sets a fundamental upper limit for the flow of information and heat, which is quantified by the quantum of thermal conductance [7,8]. The physics of this kind of quantum-limited heat conduction has been experimentally studied for lattice vibrations, or phonons [9], for electromagnetic interactions [10], and for electrons [11]. However, the short distance between the heat-exchanging bodies in the previous experiments hinders the applicability of these systems in quantum technology. Here, we present experimental observations of quantum-limited heat conduction over macroscopic distances extending to a metre. We achieved this striking improvement of four orders of magnitude in the distance by utilizing microwave photons travelling in superconducting transmission lines. Thus it seems that quantum-limited heat conduction has no fundamental restriction in its distance. This work lays the foundation for the integration of normal-metal components into superconducting transmission lines, and hence provides an important tool for circuit quantum electrodynamics [12-14], which is the basis of the emerging superconducting quantum computer [15]. In particular, our results demonstrate that cooling of nanoelectronic devices can be carried out remotely with the help of a far-away engineered heat sink. In addition, quantum-limited heat conduction plays an important role in the contemporary studies of thermodynamics such as fluctuation relations and Maxwell's demon [16,17]. Here, the long distance provided by our results may, for example, lead to an ultimate efficiency of mesoscopic heat engines with promising practical applications [18].
The Josephson energy EJ is a key parameter governing the properties of transmon superconducting qubits. In Al/AlOx/Al junctions, EJ is set by electron tunneling through an ultrathin oxide barrier and therefore depends exponentially on the atomic structure of the barrier. We compute EJ by first-principles device modeling based on the NEGF-DFT quantum-transport method, comparing a junction with a crystalline Al2O3 barrier against ten junctions with melt--quenched amorphous Al2O3 barriers of the same thickness. From the Fermi-level transmission and the Ambegaokar--Baratoff relation, we obtain a mean EJ/h of 2.78 GHz for the amorphous ensemble, with a standard deviation of 4.67 GHz, compared with 0.73 GHz for the crystalline reference; individual amorphous values span nearly two orders of magnitude. Scattering-state analysis shows that transport is quantum tunneling and that the variability originates from stoichiometric inhomogeneity of the amorphous oxide: Al-rich, low-barrier regions can connect into percolation-like tunneling pathways that strongly enhance the conductance. A realistic 200×200 nm2 junction self-averages over more than 2×104 such microscopic regions. These results establish a quantitative atomistic route from oxide microstructure to the superconducting-circuit energy scale EJ.
Many metallic quantum materials display anomalous transport phenomena that defy a Fermi liquid description. Here, we use numerical methods to calculate thermal and charge transport in the doped Hubbard model and observe a crossover separating high- and low-temperature behaviors. Distinct from the behavior at high temperatures, the Lorenz number [Formula: see text] becomes weakly doping dependent and less sensitive to parameters at low temperatures. At the lowest numerically accessible temperatures, [Formula: see text] roughly approaches the Wiedemann-Franz constant [Formula: see text], even in a doped Mott insulator that lacks well-defined quasiparticles. Decomposing the energy current operator indicates a compensation between kinetic and potential contributions, which may help to clarify the interpretation of transport experiments beyond Boltzmann theory in strongly correlated metals.