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arXiv:2510.03966 · Entropy

Ion-Based Characterization of Laser Beam Profiles for Quantum Information Processing

Ilyoung Jung, Frank G. Schroer, Philip Richerme

Published Oct 30, 2025• 1 citation
arXivHTMLPDF

Abstract

Laser-driven operations are a common approach for engineering one- and two-qubit gates in trapped-ion arrays. Measuring key parameters of these lasers, such as beam sizes, intensities, and polarizations, is central to predicting and optimizing gate speeds and stability. Unfortunately, it is challenging to accurately measure these properties at the ion location within an ultra-high vacuum chamber. Here, we demonstrate how the ions themselves may be used as sensors to directly characterize the laser beams needed for quantum gate operations. Making use of the four-photon Stark Shift effect in 171Yb+ ions, we measure the profiles, alignments, and polarizations of the lasers driving counter-propagating Raman transitions. We then show that optimizing the parameters of each laser individually leads to higher-speed Raman-driven gates with smaller susceptibility to errors. Our approach demonstrates the capability of trapped ions to probe their local environments and to provide useful feedback for improving system performance.

DOI
10.3390/e27111115

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Laser-driven operations are a common approach for engineering one- and two-qubit gates in trapped-ion arrays. Measuring key parameters of these lasers, such as beam sizes, intensities, and polarizations, is central to predicting and optimizing gate speeds and stability. Unfortunately, it is challenging to accurately measure these properties at the ion location within an ultra-high vacuum chamber. Here, we demonstrate how the ions themselves may be used as sensors to directly characterize the laser beams needed for quantum gate operations. Making use of the four-photon Stark Shift effect in 171Yb+ ions, we measure the profiles, alignments, and polarizations of the lasers driving counter-propagating Raman transitions. We then show that optimizing the parameters of each laser individually leads to higher-speed Raman-driven gates with smaller susceptibility to errors. Our approach demonstrates the capability of trapped ions to probe their local environments and to provide useful feedback for improving system performance.
We consider the implementation of quantum logic gates in trapped ions using tightly focused optical tweezers. Strong polarization gradients near the tweezer focus lead to qubit-state-dependent forces on the ion. We show that these may be used to implement quantum logic gates on pairs of ion qubits in a crystal. The qubit-state-dependent forces generated by this effect are located on the plane perpendicular to the direction of propagation of the laser beams opening alternate ways of coupling to motional modes of an ion crystal. The proposed gate does not require ground-state cooling of the ions although the waist of the tightly focused beam needs to be comparable to its wavelength in order to achieve the needed field curvature. Furthermore, the gate can be implemented on both ground-state and magnetic-field-insensitive clock-state qubits without the need for counterpropagating laser fields. This simplifies the setup and eliminates errors due to phase instabilities between the gate laser beams. Finally, we show that imperfections in the gate execution, in particular, a 30-nm tweezer alignment error, lead to an infidelity of $\ensuremath{\sim}{10}^{\ensuremath{-}3}$. In the absence of experimental imperfections and within the limits of the gate model explored in this paper the fidelity is predicted to be $\ensuremath{\sim}0.999\phantom{\rule{0.16em}{0ex}}88$ when using a Laguerre-Gaussian beam to suppress photon scattering errors.
The ability to individually manipulate the increasing number of qubits is one of the many challenges towards scalable quantum information processing with trapped ions. Using micro-mirrors fabricated with micro-electromechanical systems technology, we focus laser beams on individual ions in a linear chain and steer the focal point in two dimensions. We demonstrate sequential single qubit gates on multiple 171Yb+ qubits and characterize the gate performance using quantum state tomography. Our system features negligible crosstalk to neighboring ions (⁠<3×10−4⁠), and switching speed comparable to typical single qubit gate times (<2 μs).
We study photon scattering errors in stimulated Raman driven quantum logic gates. For certain parameter regimes, we find that previous simplified models of the process significantly overestimate the gate error rate due to photon scattering. This overestimate is shown to be due to previous models neglecting the detuning dependence of the scattered photon frequency and Lamb-Dicke parameter, a second scattering process, interference effects on scattering rates to metastable manifolds, and the counterrotating contribution to the Raman transition rate. The resulting improved model shows that there is no fundamental limit on gate error due to photon scattering for electronic ground-state qubits in commonly used trapped-ion species when the Raman laser beams are red detuned from the main optical transition. Additionally, photon scattering errors are studied for qubits encoded in the metastable D5/2{D}_{5/2}D5/2​ manifold, showing that gate errors below ${10}^{\ensuremath{-}4}$ are achievable for all commonly used trapped ions.
Quantum simulation is the process of using a highly controllable quantum system to simulate another less controllable system. Quantum simulation can provide insights into the properties and dynamics of complex many-body systems. Trapped ion platform is one of the leading candidates for a quantum simulator due to its properties such as ease of isolation, preparation and manipulation. Simulating high dimensional spin systems enables us to study the various physical phenomena in higher geometries. Previous proposals for simulating higher dimensions require experimental resources that don't scale favourably with the system. In this thesis, we propose a hybrid (digital-analog) approach to simulate an effective 2D lattice from a 1D chain of trapped ions. In the initial geometry, the ions interact with each other through a flip-flop kind of interactions generated using a global Molmer-Sorensen scheme. A series of single qubit gates are used to rescale and suppress the interactions in the initial chain to simulate the target geometry. These gates are applied using a laser field gradient which generates a site-dependent AC stark shift. I discuss the construction of this protocol in detail and the theoretical results for the case of 6, 9 and 16 ions. I also show that the number of gates and also the Stark gradient scale linearly with the system size. \n \nExperimental implementation of an ion trap quantum simulator has various challenges, one of the which is the laser frequency stabilization within a fraction of transition linewidth. Traditionally, this is done by locking the lasers to an atomic transition. In this thesis, I discuss two alternative schemes for locking the laser frequencies used to build a 171Yb+ ion quantum simulator. One of these solutions uses a commercial wavemeter as a measuring device for the frequency and feedbacks the lasers based on this measurement. I discuss the layout of this scheme and some results. Other solution uses a Fabry Perot (FP) cavity to transfer the stability of a stable laser to an unstable laser. In this thesis, I discuss the construction, optical layout and transmission measurements of a home-built FP cavity.
Two-qubit gate performance is vital for scaling up ion-trap quantum computing. Optimized quantum control is needed to achieve reductions in gate duration and gate error rate. We describe two-qubit gates with addressed Raman beams within a linear trapped-ion chain by a quantum master equation (QME). The QME incorporates the single-ion two-photon effective Rabi frequency, Autler-Townes and vibrational Bloch-Siegert energy shifts, off-resonant transitions, Raman and Rayleigh scattering, laser-power fluctuations, motional heating, cross-Kerr phonon coupling, laser spillover, asymmetric addressing beams, and an imperfect initial motional ground state, with no fitting parameters, whereas state-of-the-art methods are oblivious to these effects in the gate design procedure. We employ global optimization to design pulse sequences for achieving a robust rapid two-qubit gate for a simulated chain of seven trapped 171Yb+^{171}\mathrm{Yb}^{+}171Yb+ ions by optimizing over numerically integrated QME solutions. Here, robust means resilient against slow drift of motional frequencies, and rapid means gate execution where the effective Rabi frequency is comparable to the detuning of the laser from the ion's bare electronic transition. Our robust quantum control delivers rapid high-quality two-qubit gates in long ion chains, enabling scalable quantum computing with trapped ions.
Highly-localized light-matter interactions are necessary for scaling trapped-ion architectures. In hyperfine qubits, counterpropagating beams generate entangling gates by coupling with motion, but this effect is undesirable during single-qubit operations. For that reason, single-qubit gates are traditionally implemented with copropagating beams, and the coexistence of two beam geometries adds hardware and computational overhead. In an effort towards collective performance improvement with minimal overhead, we design and implement pulse-amplitude and dephasing robust dynamically corrected gates using Space Curve Quantum Control (SCQC) and compare them against the constant-amplitude gate implementation. We perform gate set tomography on a four-qubit trapped-ion register, and we discover more than 50% error reduction when robust pulses are used. We find that counterpropagating robust gates often outperform their copropagating counterparts and reach error rates as low as (3.59±1.25)⋅10−3(3.59 \pm 1.25)\cdot 10^{-3}(3.59±1.25)⋅10−3, using diamond distance as a metric. This value establishes a laser-driven-gate error reference and is merely an order of magnitude higher than the best reported microwave\textit{microwave}microwave gate on a single\textit{single}single ion. Additional experiments reveal that robust pulses can effectively suppress non-Markovian errors that grow during runtime. Our work challenges the widely accepted belief that copropagating gates should be preferred for their weak motional coupling and invites the adoption of high-performance robust pulses that suppress multiple noise sources of the trapped-ion error budget.