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arXiv:2507.13781

Resonant two-qubit gates for fermionic simulations with spin qubits

Konstantinos Tsoukalas, Alexei Orekhov, Bence Hetényi, Uwe von Lüpke, Jeth Arunseangroj, Inga Seidler, Lisa Sommer, Eoin G. Kelly, Leonardo Massai, Michele Aldeghi, Marta Pita‐Vidal, Stephen W. Bedell, Stephan Paredes, Felix J. Schupp, Matthias Mergenthaler, Gian Salis, Andreas Fuhrer, Patrick Harvey-Collard

Published Jul 18, 2025• 0 citations
arXivHTMLPDF

Abstract

In gate-defined semiconductor spin qubits, the highly tunable Heisenberg exchange interaction is leveraged to implement fermionic two-qubit gates such as CZ and SWAP. However, the broader family of fermionic simulation (fSim) gates remains unexplored, and has the potential to enhance the performance of near-term quantum simulation algorithms. Here, we demonstrate a method to implement the fSim gate set in spin qubits using a single pulse combining baseband and resonant exchange drives. This approach minimizes gate duration and drive amplitude, mitigating decoherence and crosstalk. We validate its effectiveness by realizing a resonant iSWAP gate between two hole spins in germanium, achieving a fidelity of 93.8(5)% extracted with interleaved randomized benchmarking. Quantum process tomography confirms accurate gate calibration and identifies qubit decoherence as the dominant error source. Our results establish a practical route toward a versatile and efficient two-qubit gate set for spin-based quantum processors.

DOI
10.48550/arxiv.2507.13781

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In gate-defined semiconductor spin qubits, the highly tunable Heisenberg exchange interaction is leveraged to implement fermionic two-qubit gates such as CZ and SWAP. However, the broader family of fermionic simulation (fSim) gates remains unexplored, and has the potential to enhance the performance of near-term quantum simulation algorithms. Here, we demonstrate a method to implement the fSim gate set in spin qubits using a single pulse combining baseband and resonant exchange drives. This approach minimizes gate duration and drive amplitude, mitigating decoherence and crosstalk. We validate its effectiveness by realizing a resonant iSWAP gate between two hole spins in germanium, achieving a fidelity of 93.8(5)% extracted with interleaved randomized benchmarking. Quantum process tomography confirms accurate gate calibration and identifies qubit decoherence as the dominant error source. Our results establish a practical route toward a versatile and efficient two-qubit gate set for spin-based quantum processors.
Quantum algorithms offer a dramatic speedup for computational problems in material science and chemistry. However, any near-term realizations of these algorithms will need to be optimized to fit within the finite resources offered by existing noisy hardware. Here, taking advantage of the adjustable coupling of gmon qubits, we demonstrate a continuous two-qubit gate set that can provide a threefold reduction in circuit depth as compared to a standard decomposition. We implement two gate families: an imaginary swap-like (iSWAP-like) gate to attain an arbitrary swap angle, θ, and a controlled-phase gate that generates an arbitrary conditional phase, ϕ. Using one of each of these gates, we can perform an arbitrary two-qubit gate within the excitation-preserving subspace allowing for a complete implementation of the so-called Fermionic simulation (fSim) gate set. We benchmark the fidelity of the iSWAP-like and controlled-phase gate families as well as 525 other fSim gates spread evenly across the entire fSim(θ,ϕ) parameter space, achieving a purity-limited average two-qubit Pauli error of 3.8×10^{-3} per fSim gate.
Hole spin qubits hosted in Germanium quantum dots are promising candidates for scalable quantum computing. The strong spin-orbit interaction can enable fast and all-electrical quantum control. Furthermore, the platform can implement universal quantum control using only baseband signals, which may mitigate the impact of crosstalk and microwave-induced heating. At the same time, spin-orbit interaction gives rise to an anisotropic exchange interaction, whose potential for implementing two-qubit gates has remained largely unexplored. However, the current performance of operating a hole-based quantum computer is mostly limited by dephasing due to low-frequency charge noise. In this work, we propose a novel two-qubit gate protocol for Germanium hole spin qubits operated in the gapless regime. This gate protocol exploits the anisotropic exchange interaction between neighboring spins and utilizes a composite pulse scheme implemented solely through electrical baseband signals. Using this approach, we predict high-fidelity two-qubit controlled-Z operations that can suppress exchange-energy fluctuations, offering a pathway toward fault-tolerant semiconductor quantum processors.
Scalable quantum computation demands high-fidelity two-qubit gates. However, decoherence and control errors are inevitable, which can decrease the quality of implemented quantum operations. We propose a robust iswap gate protocol for semiconductor spin qubits, which is a promising platform for scalable quantum computing. Our scheme uses only local microwave drives on conventional exchange-coupled spin qubits. This approach simultaneously addresses two critical challenges to semiconductor quantum computing: It suppresses low-frequency noise via continuous dynamical decoupling, and it circumvents the control difficulties associated with the ac modulation of the exchange interaction. We further develop a composite pulse sequence to remove drive-strength constraints and a dynamically corrected method to provide first-order immunity to microwave amplitude errors. Numerical simulations confirm that our scheme can achieve fidelity above the fault-tolerance threshold under current experimental conditions, offering a building block for practical quantum processors.
Hole spin qubits hosted in Germanium quantum dots are promising candidates for scalable quantum computing. The strong spin-orbit interaction can enable fast and all-electrical quantum control. Furthermore, the platform can implement universal quantum control using only baseband signals, which may mitigate the impact of crosstalk and microwave-induced heating. At the same time, spin-orbit interaction gives rise to an anisotropic exchange interaction, whose potential for implementing two-qubit gates has remained largely unexplored. However, the current performance of operating a hole-based quantum computer is mostly limited by dephasing due to low-frequency charge noise. In this work, we propose a novel two-qubit gate protocol for Germanium hole spin qubits operated in the gapless regime. This gate protocol exploits the anisotropic exchange interaction between neighboring spins and utilizes a composite pulse scheme implemented solely through electrical baseband signals. Using this approach, we predict high-fidelity two-qubit controlled-Z operations that can suppress exchange-energy fluctuations, offering a pathway toward fault-tolerant semiconductor quantum processors.
Quantum computing holds great promise for both scientific discovery and commercial applications. Superconducting quantum systems have become one of the leading architectures for large-scale quantum computing. Towards realizing practical quantum computing, improving two-qubit gate fidelity is a crucial task. It is relevant for both near-term pre-fault-tolerant quantum computers and future fault-tolerant quantum computers. This dissertation aims to provide a comprehensive study of two-qubit gates in superconducting systems. The major focus is on improving gate fidelity via using different drive schemes and coupler designs. The dissertation contains two primary original contributions. First, a novel method for implementing continuous fSim gates is proposed and analyzed in detail. The fSim gate set is a family of gates that combines iiiSWAP gate and CPHASE gate into one gate with variable rotation angles and conditional phase. This gate set is particularly interesting for quantum simulation of fermionic systems. Second, a theoretical framework for multi-mode couplers is developed. A multi-mode coupler design is proposed to enable fully localized decoupling among qubits and independent control of qubit-qubit interactions in different excitation subspaces. An example of two qubits coupled by a two-mode coupler is studied in detail. Building on the fSim gate theory and multi-mode coupler design, several future research directions are outlined. Pulse-level algorithms for simulating electronic systems are discussed as a key application of fSim gates. A three-mode coupler architecture is further introduced. In addition, the importance of incorporating open-system dynamics for accurate modeling of coupler behavior and gate performance is emphasized. Finally, a unified framework for modeling superconducting quantum processors is proposed, providing a systematic way to compare gate fidelities across theoretical approaches and ultimately guide improvements in quantum hardware performance.
Spin qubits in gate-defined semiconductor quantum dots are a promising platform for realising a scalable quantum computer. This platform encodes quantum information into the intrinsic angular momentum (spin) of individual electrons or holes. In particular, hole spins in quantum dots enable the possibility of all-electrical spin control due to their intrinsic spin-orbit coupling. One important criterion of a quantum computer is the ability to reliably read out the state of the qubit. This is done by mapping spin information to the charge degree of freedom, combined with a method for charge detection. Charge detection can be facilitated by coupling a resonator directly to the quantum dot gate or to a charge sensor and measuring the resonator's phase or amplitude response. In this thesis, we describe a set of experiments relating to the implementation of hole spin qubit readout with superconducting resonators. First, we study gate-based charge sensing in a Si fin field-effect transistor (finFET) device using a superconducting NbN nanowire resonator. We find that the resonator amplifies capacitive crosstalk when electrical control pulses are applied to gate electrodes in this device. This occurs whenever a spectral component of qubit control pulses overlaps with the resonance frequency, which we show may occur for both baseband and radio-frequency (RF) drive signals. We quantify this crosstalk in a transport-based method, and attribute its source to the capacitance between the bondpads of neighbouring gate electrodes. In a second experiment, we use an RF charge sensor with the same nanowire technology to read out hole spin qubits formed in the quantum well of a Ge/SiGe heterostructure. A screening layer approach is used to facilitate RF matching due to large RF dissipation found in the heterostructure. We implement a double-latched readout scheme in this system to reduce errors arising from both spin and charge decay during readout. The spin-to-charge conversion process and its dependence on magnetic field orientation is studied. Spin and charge decay processes arising after spin-to-charge conversion are mitigated by choosing an optimal working point for the field orientation, field amplitude and readout pulse times. By doing so, we achieve an average single-shot state-preparation-and-measurement fidelity of 97%, primarily bounded by imperfect state preparation and limited signal-to-noise ratio. Finally, we study coplanar waveguide resonators fabricated from NbN. We investigate the feasibility of integrating this type of resonator onto the same chip as the Si finFET quantum dots. We then develop a novel resonator readout technique by the interference of two microwave sidebands. We demonstrate the insensitivity of this technique to common-mode phase and amplitude noise both theoretically and experimentally. This technique is then used to study resonator noise arising from two-level system defects. These results highlight both the practical constraints and the potential for achieving high readout fidelities using resonator-based hole spin qubit readout. This work establishes a blueprint for mitigating resonator-induced crosstalk and enabling high-fidelity readout in lossy materials by incorporating a screening layer.