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arXiv:2506.19317

Temperature dependence of quasi-localized phonons-mediated non-Markovianity dynamics of SiV^- centers in diamond

Wanggui Ye, Debao Zhang, Xuguang Cao, Ji Zhou, Xinye Fan, Sicheng Liu, Ke Yu, Jiqiang Ning, Shijie Xu

Published Jun 24, 2025• 1 citation
arXivHTMLPDF

Abstract

Here we investigate the temperature-dependent non-Markovian dynamics of the SiV^- center in diamond, focusing on the roles of low- and high-frequency quasi-localized phonon modes. Low-frequency phonons exhibit stronger electron-phonon coupling, leading to long-lived dephasing rate, while high-frequency phonons induce rapid attenuation of oscillatory dephasing rate facilitating a persistent memory effect. The non-Markovianity measure N_C shows memory effects persisting at low temperatures but diminishing at high temperatures due to enhanced damping. The temperature dependence of N_C follows a monotonic decay, from which a transition temperature T_NM=110 K is determined. These results highlight the interplay between phonon activation and damping in shaping quantum coherence, offering insights for optimizing solid-state quantum systems.

DOI
10.48550/arxiv.2506.19317

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Abstract The electron–phonon interaction is a cornerstone of condensed matter physics, playing a pivotal role in the properties of solid-state systems. When localized electronic states are coupled to lattice vibrations, phonons can induce memory effects. This study explores the non-equilibrium dynamics of a negatively charged silicon-vacancy center in diamond, analyzing the effects of both single phonon mode and structured phonon environment. Using numerical simulations and theoretical analysis, we employ trace distance as a metric to identify and understand memory effects in the transient dynamics and non-Markovian evolution. We systematically investigate the impact of longitudinal and transverse magnetic fields, phonon coupling strengths, Fock states, localized vibrations, and temperature on memory effects in this solid-state system. Our findings provide deeper insights into the interplay between electronic states and phonon environments, offering a comprehensive understanding of the conditions that govern the backflow of information in quantum solid-state devices.
The electron-phonon interaction is one of the most fundamental mechanisms in condensed matter physics. Phonons can induce memory effects in solid-state platforms when localized electronic states interact with lattice vibrations in non-unitary dynamical maps. In this work, we demonstrate how single-mode and structured phonon environments can give rise to non-Markovian dynamics of an individual negatively charged silicon-vacancy center in diamond. Using trace distance as a quantifier via numerical simulations and theoretical calculations, we identify the physical conditions for emerging and understanding non-Markovian behavior in diverse scenarios. Most importantly, we investigate the influence of magnetic fields (longitudinal and transverse), phonon couplings, Fock states, and temperature to understand how these factors influence memory effects in this solid-state device.
We report on the coherence properties of single photons from chromium-based color centers in diamond. We use field-correlation and spectral line-shape measurements to reveal the interplay between slow spectral wandering and fast dephasing mechanisms as a function of temperature. The zero-phonon transition frequency and its linewidth follow a power-law dependence on temperature, which is consistent with direct electron-phonon coupling and phonon-modulated Coulomb coupling to nearby impurities, which are the predominant fast dephasing mechanisms for these centers. Further, the observed reduction in the quantum yield for photon emission as a function of temperature suggests the opening of additional nonradiative channels through thermal activation to higher-energy states and indicates a near-unity quantum efficiency at 4 K.
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We report experimental studies of coherent population trapping and spin relaxation in a temperature range between 4 K and 100 mK in a silicon vacancy (SiV) center subject to a transverse magnetic field. Near and below 1 K, phonon-induced spin dephasing becomes negligible compared with that induced by the spin bath of naturally abundant 13C atoms. The temperature dependence of the spin dephasing rates agrees with the theoretical expectation that phonon-induced spin dephasing arises primarily from orbital relaxation induced by first order electron-phonon interactions. A nearly 100-fold increase in spin lifetime is observed when the temperature is lowered from 4 K to slightly below 1 K, indicating that two-phonon spin-flip transitions play an essential role in the spin relaxation of SiV ground states.
Vacancy centers in diamond have proven to be a viable solid-state platform for quantum-coherent optoelectronic applications. Among the variety of vacancy centers, silicon-vacancy (SiV) centers have recently attracted much attention as an inversion-symmetric system that is less susceptible to electron-phonon interactions. Nevertheless, phonon-mediated processes still degrade the coherent properties of SiV centers; however, characterizing their electron-phonon coupling is extremely challenging due to their weak spectroscopic signatures and remains an open experimental problem. In this paper we theoretically investigate signatures of electron-phonon coupling in simulated linear and nonlinear spectra of SiV centers. We demonstrate how even extremely weak electron-phonon interactions, such as in SiV centers, may be completely characterized via nonlinear spectroscopic techniques and even resolved between different fine-structure transitions.