arXiv:2503.22481 · Physical review. B./Physical review. B

Charge creation via quantum tunneling in one-dimensional Mott insulators: A numerical study of the extended Hubbard model

Thomas Hansen, Lars Bojer Madsen, Yuta Murakami

Published Jun 26, 2025• 1 citation

Abstract

Charge creation via quantum tunneling, i.e. dielectric breakdown, is one of the most fundamental and significant phenomena arising from strong light(field)-matter coupling. In this work, we conduct a systematic numerical analysis of quantum tunneling in one-dimensional Mott insulators described by the extended ($U$-$V$) Hubbard model. We discuss the applicability of the analytical formula for doublon-holon (DH) pair production, previously derived for the one-dimensional Hubbard model, which highlights the relationship between the tunneling threshold, the charge gap, and the correlation length. We test the formulas ability to predict both DH pair production and energy increase rate. Using tensor-network-based approaches, we demonstrate that the formula provides accurate predictions in the absence of excitonic states facilitated by the nearest-neighbor interaction $V$. However, when excitonic states emerge, the formula more accurately describes the rate of energy increase than the DH pair creation rate and in both cases gets improved by incorporating the exciton energy as the effective gap.

DOI: 10.1103/r15c-ymgc

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arXiv:2503.22481 · Physical review. B./Physical review. B

Charge creation via quantum tunneling in one-dimensional Mott insulators: A numerical study of the extended Hubbard model

Thomas Hansen, Lars Bojer Madsen, Yuta Murakami

Published Jun 26, 2025• 1 citation

arXiv HTML PDF

Abstract

U

V

) Hubbard model. We discuss the applicability of the analytical formula for doublon-holon (DH) pair production, previously derived for the one-dimensional Hubbard model, which highlights the relationship between the tunneling threshold, the charge gap, and the correlation length. We test the formulas ability to predict both DH pair production and energy increase rate. Using tensor-network-based approaches, we demonstrate that the formula provides accurate predictions in the absence of excitonic states facilitated by the nearest-neighbor interaction

V

. However, when excitonic states emerge, the formula more accurately describes the rate of energy increase than the DH pair creation rate and in both cases gets improved by incorporating the exciton energy as the effective gap.

DOI: 10.1103/r15c-ymgc

Related papers

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U

V

V

U

is much larger than the nearest-neighbor transfer integral

t

and the nearest-neighbor Coulomb interaction energy

V

. For

V=0

, the absorption spectrum consists of a broad band with a width of about

16t

and a sharp central peak, and the energy eigenstates contributing to the absorption spectrum do not have the antiferromagnetic (AF) spin order, when

U

is sufficiently larger than

t

. These features result from the spin-charge interplay inherent in the very strong correlation region where charge transfer term is dominant. With decreasing

U∕t

, the peak structure in absorption spectrum becomes unclear and some low energy eigenstates have the AF spin order, as a result of the spin-spin interaction term. For large

V∕t

, the dominant peak arises in the lower energy region of the spectrum. A large number of holon-doublon bound states, which have nearly the same charge but different spin structures, are responsible for this peak, in contrast to the conventional exciton state. This is also in contrast to the charge bound states in one-dimensional (1D) Mott insulators, where a single energy eigenstate dominates the optical transition moment as a result of the spin-charge separation. The essentially different absorption spectra between the 1D and 2D Mott insulators originate from the difference in the coupling between spin and charge degrees of freedom.