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arXiv:2502.16426

Correlated Dephasing in a Piezoelectrically Transduced Silicon Phononic Waveguide

Oliver A. Hitchcock, Felix M. Mayor, Wentao Jiang, M. P. Maksymowych, Sultan Malik, Amir H. Safavi‐Naeini

Published Feb 23, 2025• 0 citations
arXivHTMLPDF

Abstract

Nanomechanical waveguides offer a multitude of applications in quantum and classical technologies. Here, we design, fabricate, and characterize a compact silicon single-mode phononic waveguide actuated by a thin-film lithium niobate piezoelectric element. Our device directly transduces between microwave frequency photons and phonons propagating in the silicon waveguide, providing a route for coupling to superconducting circuits. We probe the device at millikelvin temperatures through a superconducting microwave resonant matching cavity to reveal harmonics of the silicon waveguide and extract a piezoelectric coupling rate $g/2π= 1.1$ megahertz and a mechanical coupling rate $f/2π=5$ megahertz. Through time-domain measurements of the silicon mechanical modes, we observe energy relaxation timescales of $T_{1,\text{in}} \approx 500$ microseconds, pure dephasing timescales of $T_ϕ\approx {60}$ microseconds and dephasing dynamics that indicate the presence of an underlying frequency noise process with a non-uniform spectral distribution. We measure phase noise cross-correlations between silicon mechanical modes and observe detuning-dependent positively-correlated frequency fluctuations. Our measurements provide valuable insights into the dynamics and decoherence characteristics of hybrid piezoelectric-silicon acoustic devices, and suggest approaches for mitigating and circumventing noise processes for emerging quantum acoustic systems.

DOI
10.48550/arxiv.2502.16426

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Nanomechanical waveguides offer a multitude of applications in quantum and classical technologies. Here, we design, fabricate, and characterize a compact silicon single-mode phononic waveguide actuated by a thin-film lithium niobate piezoelectric element. Our device directly transduces between microwave frequency photons and phonons propagating in the silicon waveguide, providing a route for coupling to superconducting circuits. We probe the device at millikelvin temperatures through a superconducting microwave resonant matching cavity to reveal harmonics of the silicon waveguide and extract a piezoelectric coupling rate g/2π=1.1g/2π= 1.1g/2π=1.1 megahertz and a mechanical coupling rate f/2π=5f/2π=5f/2π=5 megahertz. Through time-domain measurements of the silicon mechanical modes, we observe energy relaxation timescales of T1,in≈500T_{1,\text{in}} \approx 500T1,in​≈500 microseconds, pure dephasing timescales of Tϕ≈60T_ϕ\approx {60}Tϕ​≈60 microseconds and dephasing dynamics that indicate the presence of an underlying frequency noise process with a non-uniform spectral distribution. We measure phase noise cross-correlations between silicon mechanical modes and observe detuning-dependent positively-correlated frequency fluctuations. Our measurements provide valuable insights into the dynamics and decoherence characteristics of hybrid piezoelectric-silicon acoustic devices, and suggest approaches for mitigating and circumventing noise processes for emerging quantum acoustic systems.
Coherent transduction of quantum states from the microwave to the optical domain can play a key role in quantum networking and distributed quantum computing. We present the design of a piezo-optomechanical device formed in a hybrid lithium niobate on silicon platform, that is suitable for microwave-to-optical quantum transduction. Our design is based on acoustic hybridization of an ultra-low mode volume piezoacoustic cavity with an optomechanical crystal cavity. The strong piezoelectric nature of lithium niobate allows us to mediate transduction via an acoustic mode which only minimally interacts with the lithium niobate, and is predominantly silicon-like, with very low electrical and acoustic loss. We estimate that this transducer can realize an intrinsic conversion efficiency of up to 35% with <0.5 added noise quanta when resonantly coupled to a superconducting transmon qubit and operated in pulsed mode at 10 kHz repetition rate. The performance improvement gained in such hybrid lithium niobate-silicon transducers make them suitable for heralded entanglement of qubits between superconducting quantum processors connected by optical fiber links.
Abstract The development of superconducting quantum processors relies on understanding and mitigating decoherence in superconducting qubits. Piezoelectric coupling contributes to decoherence by mediating energy exchange between microwave photons and acoustic phonons. Although bulk centrosymmetric materials like silicon and sapphire are non-piezoelectric and commonly used as qubit substrates, the lack of centrosymmetry at interfaces may induce piezoelectric losses. This effect was predicted decades ago but never experimentally observed in superconducting devices. Here, we report interface piezoelectricity at aluminum-silicon junctions and demonstrate it as a significant loss channel in superconducting devices. Using aluminum interdigital transducers on silicon, we observe piezoelectric transduction from room to millikelvin temperatures, with an effective electromechanical coupling factor K 2 ≈ (3 ± 0.4) × 10 −5 %, comparable to weakly piezoelectric substrates. Modeling shows this mechanism limits qubit quality factors to Q ~ 10 4 − 10 8 , depending on surface participation and mode matching. These findings reveal interface piezoelectricity as a major dissipation channel and highlight the need for heterostructure and phononic engineering in next-generation superconducting qubits.
Mechanical objects have important practical applications in the fields of quantum information and metrology as quantum memories or transducers for measuring and connecting different types of quantum systems. The field of electromechanics is in pursuit of a robust and highly coherent device that couples motion to nonlinear quantum objects such as superconducting qubits. Here, we experimentally demonstrate a high-frequency bulk acoustic wave resonator that is strongly coupled to a superconducting qubit using piezoelectric transduction with a cooperativity of 260. We measure qubit and mechanical coherence times on the order of 10 microseconds. Our device requires only simple fabrication methods and provides controllable access to a multitude of phonon modes. We demonstrate quantum control and measurement on gigahertz phonons at the single-quantum level.
The evolution of superconducting quantum processors is driven by the need to reduce errors and scale for fault-tolerant computation. Reducing physical qubit error rates requires further advances in the microscopic modeling and control of decoherence mechanisms in superconducting qubits. Piezoelectric interactions contribute to decoherence by mediating energy exchange between microwave photons and acoustic phonons. Centrosymmetric materials like silicon and sapphire do not display piezoelectricity and are the preferred substrates for superconducting qubits. However, the broken centrosymmetry at material interfaces may lead to piezoelectric losses in qubits. While this loss mechanism was predicted two decades ago, interface piezoelectricity has not been experimentally observed in superconducting devices. Here, we report the observation of interface piezoelectricity at an aluminum-silicon junction and show that it constitutes an important loss channel for superconducting devices. We fabricate aluminum interdigital surface acoustic wave transducers on silicon and demonstrate piezoelectric transduction from room temperature to millikelvin temperatures. We find an effective electromechanical coupling factor of K2≈2×10−5%K^2\approx 2 \times 10^{-5}\%K2≈2×10−5% comparable to weakly piezoelectric substrates. We model the impact of the measured interface piezoelectric response on superconducting qubits and find that the piezoelectric surface loss channel limits qubit quality factors to Q∼104−108Q\sim10^4-10^8Q∼104−108 for designs with different surface participation ratios and electromechanical mode matching. These results identify electromechanical surface losses as a significant dissipation channel for superconducting qubits, and show the need for heterostructure and phononic engineering to minimize errors in next-generation superconducting qubits.
Superconducting resonators coupled to semiconductor quantum dots provide a powerful platform to investigate light-matter interaction and decoherence mechanisms in solid-state quantum systems. Here we study a hybrid circuit quantum electrodynamics architecture consisting of a GaAs double-quantum-dot charge qubit capacitively coupled to a high-impedance, frequency-tunable SQUID-array resonator. By tuning the qubit transition frequency over the range ωq/2π∼3ω_\mathrm{q}/2π\sim 3ωq​/2π∼3-666 GHz, we perform frequency-resolved decoherence spectroscopy of the charge qubit across a broad energy window. Time-resolved measurements enable us to disentangle relaxation and pure dephasing processes and to identify distinct decoherence regimes as a function of qubit frequency. We find that at lower frequencies (≤4.5\leq 4.5≤4.5 GHz) dephasing dominates the qubit linewidth, whereas at higher frequencies energy relaxation becomes the leading contribution. The measured frequency dependence of the relaxation rate exhibits a cubic scaling, consistent with charge-qubit decay dominated by coupling to a piezoelectric phonon bath and providing frequency-resolved access to the corresponding phonon-induced spectral density. Our results show that hybrid semiconductor--superconducting circuits can serve as sensitive spectroscopic tools to probe microscopic decoherence mechanisms relevant for a wide range of hybrid quantum devices.
Thin-film lithium niobate (LN) has become an enabling platform in the development of quantum integrated circuits, for applications including microwave-to-optical converters and electromechanical transducers. Incorporation of high-quality planar superconducting resonators will further elevate the performance of these devices. However, alongside the desired interactions originated from LN, its piezoelectric nature also introduces parasitic coupling between microwave and phononic modes, resulting in excessive dielectric loss. In this work, we investigate such coupling by studying niobium nitride resonators directly deposited on patterned LN thin films. By varying device configuration, we pinpoint that overlapping electric field with LN can inadvertently excite bulk acoustic modes within the substrate, inducing microwave loss independent of the acoustic dissipation rate. The experimental results are supported by simulation and theoretical modeling. Our approach can be applied to different piezoelectric systems and provide insights into the design of microwave components for quantum transduction devices.