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arXiv:2501.02387

Fast Mølmer-Sørensen gates in trapped-ion quantum processors with compensated carrier transition

Evgeny V. Anikin, А. Г. Чучалин, Nikita Fedorovich Morozov, Olga Lakhmanskaya, Kirill Lakhmanskiy

Published Jan 4, 2025• 0 citations
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Abstract

Carrier transition is one of the major factors hindering the high-speed implementation of the Mølmer-Sørensen gates in trapped-ion quantum processors. We present an approach to design laser pulse shapes for the Mølmer-Sørensen gate in ion chains which accounts for the effect of carrier transition on qubit-phonon dynamics. We show that the fast-oscillating carrier term effectively modifies the spin-dependent forces acting on ions, and this can be compensated by a simple nonlinear transformation of a laser pulse. Using numerical simulations for short ion chains and perturbation theory for longer chains up to $20$ ions, we demonstrate that our approach allows to reach the infidelity below $10^{-4}$ while keeping the gate duration of the order of tens of microseconds.

DOI
10.48550/arxiv.2501.02387

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High-fidelity two-qubit entangling gates are essential for the realization of useful quantum algorithms on quantum processors. The Mølmer-Sørensen (MS) gate has become a common choice for trapped-ion quantum computing due to its resilience to ion temperature and its demonstrated record fidelities. However, the spectral impurity of the driving laser field impacts gate performance, with phase noise influencing the qubit dynamics through mechanisms operating on different timescales. In this work, we present a comprehensive theoretical analysis of laser phase noise in the MS gate, identifying two spectral ranges which influence the gate fidelity the most: "fast" noise at frequencies near the motional mode spectrum, and "slow" noise at frequencies on the order of the inverse gate time. We derive the noise Hamiltonians for two common laser beam geometries and obtain analytical expressions for the average gate error in terms of the laser noise power spectral density and gate parameters. For slowly varying noise spectra, we provide simplified error estimates. In addition, we validate our findings against previously published numerical simulations.
We analyze the impact of correlated laser frequency noise on Mølmer-Sørensen gates in qubit registers based on trapped-ion chains. Using perturbation theory, we calculate gate fidelities in the presence of noise with arbitrary power spectral density for different chain lengths and ion positions in the chain. With our approach, we account for simultaneous excitation of multiple phonon modes during gate operation. We find out that the impact of medium-frequency laser noise depends considerably on the positions of the ions in the chain. In contrast, low-frequency noise has similar effect for different chain lengths and ion positions.
The high-fidelity multi-ion entangled states and quantum gates are the basis for trapped-ion quantum computing. Among the developed quantum gate schemes, Mølmer-Sørensen gate is a relatively mature experimental technique to realize multi-ion entanglement and quantum logic gates. In recent years, there have also been schemes to realize ultrafast quantum entanglement and quantum logic gates that operate outside the Lamb-Dicke regime by designing ultrafast laser pulse sequences. In such a many-body quantum system, these entanglement gates couple the spin states between ions by driving either the phonon energy level or the motional state of the ion chain. To improve the fidelity of quantum gates, the modulated laser pulses or the appropriately designed pulse sequences are applied to decouple the multi-mode motional states. In this review, we summarize and analyze the essential aspects of realizing these entanglement gates from both theoretical and experimental points of view. We also reveal that the basic physical process of realizing quantum gates is to utilize nonlinear interactions in non-equilibrium processes through driving the motional states of an ion chain with laser fields.
Abstract Trapped ion hardware has made significant progress recently and is now one of the leading platforms for quantum computing. To construct two-qubit gates in trapped ions, experimental manipulation approaches for ion chains are becoming increasingly prevalent. Given the restricted control technology, how implementing high-fidelity quantum gate operations is crucial. Many works in current pulse design optimization focus on ion–phonon and effective ion–ion couplings while ignoring the first-order derivative terms expansion impacts of these two terms brought on by experiment defects. This paper proposes a novel robust quantum control optimization method in trapped ions. By introducing the first-order derivative terms caused by the error into the optimization cost function, we generate an extremely robust Mølmer–Sørensen gate with infidelity below 10−3 under a drift noise range of ±10 kHz, the relative robustness achieves a tolerance of ±5%, compared to the 200-kHz frequency spacing between phonon modes, and for time noise drift, the tolerance reached to 2%. Our work reveals the vital role of the first-order derivative terms of coupling in trapped ion pulse control optimization, especially the first-order derivative terms of ion–ion coupling. It provides a robust optimization scheme for realizing more efficient entangled states in trapped ion platforms.
The Mølmer–Sørensen gate is a state-of-the-art entangling gate in ion trap quantum computing where the gate fidelity can exceed 99%. Here we propose an analogous implementation in the setting of cavity QED. The cavity photon mode acts as the bosonic degree of freedom in the gate in contrast to that played by the phonon mode in ion traps. This is made possible by utilising cavity assisted Raman transitions interconnecting the logical qubit states embedded in a four-level energy structure, making the 'anti-Jaynes–Cummings' term available under the rotating-wave approximation. We identify practical sources of infidelity and discuss their effects on the gate performance. Our proposal not only demonstrates an alternative entangling gate scheme but also sheds new light on the relationship between ion traps and cavity QED, in the sense that many techniques developed in the former are transferable to the latter through our framework.