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arXiv:2411.09744 · Nature Communications

Measuring Hall voltage and Hall resistance in an atom-based quantum simulator

Tianwei Zhou, T. Beller, G. Masini, Jacopo Parravicini, Giacomo Cappellini, Cécile Repellin, Thierry Giamarchi, Jacopo Catani, Michele Filippone, L. Fallani

Published Nov 21, 2025• 6 citations
arXivHTMLPDF

Abstract

In the Hall effect, a voltage drop develops perpendicularly to the current flow in the presence of a magnetic field, leading to a transverse Hall resistance. Recent developments with quantum simulators have unveiled strongly correlated and universal manifestations of the Hall effect. However, a direct measurement of the Hall voltage and of the Hall resistance in a non-electronic system of strongly interacting fermions was not achieved to date. Here, we demonstrate a technique for measuring the Hall voltage in a neutral-atom-based quantum simulator. From that we provide the first direct measurement of the Hall resistance in a cold-atom analogue of a solid-state Hall bar and study its dependence on the carrier density, along with theoretical analyses. Our work closes a major gap between analogue quantum simulations and measurements performed in solid-state systems, providing a key tool for the exploration of the Hall effect in highly tunable and strongly correlated systems. The authors report an experimental study of the Hall effect measuring electrical quantities in ultracold fermionic quantum simulators. This provides a way forward in measuring transport properties in these platforms and verifying long-standing theoretical predictions.

DOI
10.1038/s41467-025-65083-6

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In the Hall effect, a voltage drop develops perpendicularly to the current flow in the presence of a magnetic field, leading to a transverse Hall resistance. Recent developments with quantum simulators have unveiled strongly correlated and universal manifestations of the Hall effect. However, a direct measurement of the Hall voltage and of the Hall resistance in a non-electronic system of strongly interacting fermions was not achieved to date. Here, we demonstrate a technique for measuring the Hall voltage in a neutral-atom-based quantum simulator. From that we provide the first direct measurement of the Hall resistance in a cold-atom analogue of a solid-state Hall bar and study its dependence on the carrier density, along with theoretical analyses. Our work closes a major gap between analogue quantum simulations and measurements performed in solid-state systems, providing a key tool for the exploration of the Hall effect in highly tunable and strongly correlated systems. The authors report an experimental study of the Hall effect measuring electrical quantities in ultracold fermionic quantum simulators. This provides a way forward in measuring transport properties in these platforms and verifying long-standing theoretical predictions.
Measurement techniques based upon the Hall effect are invaluable tools in condensed-matter physics. When an electric current flows perpendicular to a magnetic field, a Hall voltage develops in the direction transverse to both the current and the field. In semiconductors, this behavior is routinely used to measure the density and charge of the current carriers (electrons in conduction bands or holes in valence bands)--internal properties of the system that are not accessible from measurements of the conventional resistance. For strongly interacting electron systems, whose behavior can be very different from the free electron gas, the Hall effect's sensitivity to internal properties makes it a powerful tool; indeed, the quantum Hall effects are named after the tool by which they are most distinctly measured instead of the physics from which the phenomena originate. Here we report the first observation of a Hall effect in an ultracold gas of neutral atoms, revealed by measuring a Bose-Einstein condensate's transport properties perpendicular to a synthetic magnetic field. Our observations in this vortex-free superfluid are in good agreement with hydrodynamic predictions, demonstrating that the system's global irrotationality influences this superfluid Hall signal.
The Hall effect, which originates from the motion of charged particles in magnetic fields, has deep consequences for the description of materials, extending far beyond condensed matter. Understanding such an effect in interacting systems represents a fundamental challenge, even for small magnetic fields. In this work, we used an atomic quantum simulator in which we tracked the motion of ultracold fermions in two-leg ribbons threaded by artificial magnetic fields. Through controllable quench dynamics, we measured the Hall response for a range of synthetic tunneling and atomic interaction strengths. We unveil a universal interaction-independent behavior above an interaction threshold, in agreement with theoretical analyses. The ability to reach hard-to-compute regimes demonstrates the power of quantum simulation to describe strongly correlated topological states of matter.
We analyze the role of impurities in the fractional quantum Hall effect using a highly controllable system of ultracold atoms. We investigate the mechanism responsible for the formation of plateaux in the resistivity/conductivity as a function of the applied magnetic field in the lowest Landau level regime. To this aim, we consider an impurity immersed in a small cloud of an ultracold quantum Bose gas subjected to an artificial magnetic field. We consider scenarios corresponding to experimentally realistic systems with gauge fields induced by rotation of the trapping parabolic potential. Systems of this kind are adequate to simulate quantum Hall effects in ultracold atom setups. We use exact diagonalization for few atoms and to emulate transport equations, we analyze the time evolution of the system under a periodic perturbation. We provide a theoretical proposal to detect the up-to-now elusive presence of strongly correlated states related to fractional filling factors in the context of ultracold atoms. We analyze the conditions under which these strongly correlated states are associated with the presence of the resistivity/conductivity plateaux. Our main result is the presence of a plateau in a region, where the transfer between localized and non-localized particles takes place, as a necessary condition to maintain a constant value of the resistivity/conductivity as the magnetic field increases.
We analyze the role of impurities in the fractional quantum Hall effect using a highly controllable system of ultracold atoms. We investigate the mechanism responsible for the formation of plateaux in the resistivity/conductivity as a function of the applied magnetic field in the lowest Landau level regime. To this aim, we consider an impurity immersed in a small cloud of an ultracold quantum Bose gas subjected to an artificial magnetic field. We consider scenarios corresponding to experimentally realistic systems with gauge fields induced by rotation of the trapping parabolic potential. Systems of this kind are adequate to simulate quantum Hall effects in ultracold atom setups. We use exact diagonalization for few atoms and to emulate transport equations, we analyze the time evolution of the system under a periodic perturbation. We provide a theoretical proposal to detect the up-to-now elusive presence of strongly correlated states related to fractional filling factors in the context of ultracold atoms. We analyze the conditions under which these strongly correlated states are associated with the presence of the resistivity/conductivity plateaux. Our main result is the presence of a plateau in a region, where the transfer between localized and non-localized particles takes place, as a necessary condition to maintain a constant value of the resistivity/conductivity as the magnetic field increases.
Characterizing carrier type in strongly correlated quantum systems conventionally relies on the Hall effect. In cold-atom quantum simulators, implementing Hall transport measurements typically requires synthetic gauge fields, which introduces significant heating. Here, we present nonlinear spectroscopic and fluctuation-based protocols that establish an alternative route to identifying the sign of quasiparticle charge. We demonstrate that second-order density and current responses to finite-momentum quenches and drives-as well as equilibrium third-order density cumulants-distinguish electron- from hole-like quasiparticles. For a Fermi-Hubbard multi-leg ladder on a square lattice, numerical simulations reveal a crossover from hole- to electron-like carriers upon hole-doping away from half-filling, matching the sign change in the Hall coefficient. To demonstrate the applicability of our protocols beyond fermionic systems, we show that the nonlinear density response to a finite-momentum, finite-frequency drive reveals the sign of charge carriers in a hard-core boson ladder, and that the nonlinear signal can be significantly enhanced when driving near resonance with a nonlinear collective mode. Our results establish nonlinear density and current response and equilibrium non-Gaussian fluctuations as complementary probes, offering quantum simulators a direct route to characterize the carrier sign, without the experimental hurdles of conventional transport setups.
This proceedings presents recent advancements in the realization of topological states of matter using ultracold atomic gases. We focus on the simulation of the quantum Hall effect, originally discovered in two-dimensional electron gases subjected to a magnetic field. Given that ultracold atoms are neutral, simulating the effect of a magnetic field requires an ad-hoc technique. We review various methods developed for this purpose, highlighting their respective advantages and limitations. Furthermore, we explore the extension of these techniques to interacting quantum gases within topological bands, aiming to create analogs of fractional quantum Hall states. These many-body states are distinguished by their topological order, which is characterized by long-range entanglement among particles and the emergence of low-lying excitations exhibiting fractional quantum statistics. The discussion will encompass the current state of research and potential future directions in the field.