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arXiv:2406.12677 · Physical review. B./Physical review. B

Scaling of the integrated quantum metric in disordered topological phases

Jorge Martínez Romeral, Aron W. Cummings, Stephan Roche

Published Apr 2, 2025• 10 citations
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Abstract

We report a study of a disorder-dependent real-space representation of the quantum geometry in topological systems. Thanks to the development of an efficient linear-scaling numerical methodology based on the kernel polynomial method, we can explore nontrivial behavior of the integrated quantum metric and Chern number in disordered systems with sizes reaching the experimental scale. We illustrate this approach in the disordered Haldane model, examining the impact of Anderson disorder and vacancies on the trivial and topological phases captured by this model.

DOI
10.1103/physrevb.111.134201

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We report a study of a disorder-dependent real-space representation of the quantum geometry in topological systems. Thanks to the development of an efficient linear-scaling numerical methodology based on the kernel polynomial method, we can explore nontrivial behavior of the integrated quantum metric and Chern number in disordered systems with sizes reaching the experimental scale. We illustrate this approach in the disordered Haldane model, examining the impact of Anderson disorder and vacancies on the trivial and topological phases captured by this model.
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Disorder is ubiquitous in quantum materials, and its interplay with topology can generate phases absent in the clean limit. Using the Haldane model as a minimal setting, we show that disorder not only shifts topological boundaries but also stabilizes a topological Anderson insulator (TAI) between trivial and Chern insulating regimes. Employing the local Chern marker as a real-space topological probe, we map the full phase diagram and demonstrate that the TAI forms a finite domain bounded by trivial and Anderson insulators. Multifractal analysis of low-energy eigenstates at the boundary reveals universal critical spectra, independent of whether disorder generates or destroys topology. These results place topology, localization, and criticality within a unified framework and provide clear benchmarks for real-space diagnostics of disordered topological phases.
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We analyze the influence of disorder and strong correlations on the topology of two-dimensional Chern insulators. A mean-field calculation in the half-filled Haldane model with extended Hubbard interactions and Anderson disorder shows that the disorder favors topology in the interacting case and extends the topological phase to a larger region of the Hubbard parameters. In the absence of a staggered potential, we find a novel disorder-driven topological phase with Chern number C=1C=1C=1, with the coexistence of topology with long-range spin and charge orders. More conventional topological Anderson insulating phases are also found in the presence of a finite staggered potential.
We extend Kitaev's real-space formulation of the first Chern number to the second Chern number and establish a computational framework for its evaluation. To test its validity, we apply the derived formula to the disordered Wilson-Dirac model and analyze its ability to capture topological properties in the presence of disorder. Our results demonstrate that the real-space approach provides a viable method for characterizing higher-dimensional topological phases beyond momentum-space formulations.
The atomic-scale influence of disorder on the topological order can be quantified by a universal topological marker, although the practical calculation of the marker becomes numerically very costly in higher dimensions. We propose that for any symmetry class in higher dimensions, the topological marker can be calculated in a very efficient way by adopting the kernel polynomial method. Using class AII in three dimensions as an example, which is relevant to realistic topological insulators like Bi2Se3 and Bi2Te3, this method reveals the criteria for the invariance of topological order in the presence of disorder, as well as the possibility of a smooth cross over between two topological phases caused by disorder. In addition, the significantly enlarged system size in the numerical calculation implies that this method is capable of capturing the quantum criticality much closer to topological phase transitions, as demonstrated by a nonlocal topological marker.