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arXiv:2403.13505 · IEEE Journal of Selected Topics in Quantum Electronics

Towards an All-Silicon QKD Transmitter Sourced by a Ge-on-Si Light Emitter

Florian Honz, Nemanja Vokić, Michael Hentschel, Philip John Walther, Hannes Hübel, Bernhard Schrenk

Published Sep 14, 2023• 10 citations

Abstract

We demonstrate a novel transmitter concept for quantum key distribution based on the polarization-encoded BB84 protocol, which is sourced by the incoherent light of a forward-biased Ge-on-Si PIN junction. We investigate two architectures for quantum state preparation, including independent polarization encoding through multiple modulators and a simplified approach leveraging on an interferometric polarization modulator. We experimentally prove that the Ge-on-Si light source can accommodate for quantum key generation by accomplishing raw-key rates of 2.15 kbit/s at a quantum bit error ratio of 7.71% at a symbol rate of 1 GHz. We further investigate the impact of depolarization along fiber-based transmission channels in combination with the broadband nature of the incoherent light source. Our results prove the feasibility of a fully-integrated silicon quantum key distribution transmitter, including its light source, for possible short-reach applications in zero-trust intra-datacenter environments.

DOI: 10.1109/jstqe.2023.3315584

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We present a silicon optical transmitter for polarization-encoded quantum key distribution (QKD). The chip was fabricated in a standard silicon photonic foundry process and integrated a pulse generator, intensity modulator, variable optical attenuator, and polarization modulator in a 1.3 mm

\times

3 mm die area. The devices in the photonic circuit meet the requirements for QKD. The transmitter was used in a proof-of-concept demonstration of the BB84 QKD protocol over a 5 km long fiber link.