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arXiv:2403.12103 · Chinese Physics Letters

Manipulative Properties of Asymmetric Double Quantum Dots via Laser and Gate Voltage

Zhao Shun-Cai, Zhengdong Liu

Published Jul 1, 2009• 10 citations
arXivHTMLPDF

Abstract

We present a density matrix approach for the theoretical description of an asymmetric double quantum dot (QD) system. The results show that the properties of gain, absorption and dispersion of the double QD system, the population of the state with one hole in one dot and an electron in another dot transferred by tunneling can be manipulated by a laser pulse or gate voltage. Our scheme may demonstrate the possibility of electro-optical manipulation of quantum systems.

DOI
10.1088/0256-307x/26/7/077802

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We present a density matrix approach for the theoretical description of an asymmetric double quantum dot (QD) system. The results show that the properties of gain, absorption and dispersion of the double QD system, the population of the state with one hole in one dot and an electron in another dot transferred by tunneling can be manipulated by a laser pulse or gate voltage. Our scheme may demonstrate the possibility of electro-optical manipulation of quantum systems.
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A method of coherent manipulation of the electron tunneling in quantum dots is proposed, which utilizes the quantum interference in nonadiabatic double crossing of the discrete energy levels. In this method, we need only a smoothly varying gate voltage to manipulate electrons, without a sudden switching on and off. A systematic design of a smooth gate pulse is presented with a simple analytic formula to drive the two-level electronic state to essentially an arbitrary target state, and numerical simulations for complete transfer of an electron is shown for coupled double quantum dots and an array of quantum dots. Estimation of the manipulation time shows that the present method can be employed in realistic quantum dots.
Abstract Quantum operations on a charge qubit, which is represented by a single-electron double quantum dot (QD) with structure asymmetry, are considered. It is shown that with the help of an electric field created by voltage gates the tunnel coupling of the QD excited states is possible to control. An algorithm for performing single-qubit rotations based on a sequence of tunnel and optical transitions is described. The dependences of the correction electric field on geometric parameters of the gates are calculated.
A model of the dynamical equations of the density matrix describes double tunnelling between double quantum dot (QD) system states, this is to study Kerr nonlinearity in QD structure. Inhomogeneity in the QD system is included which is not included in earlier studies of Kerr nonlinearity in QDs. Possibilities of subluminal and superluminal light propagation and switching between them are examined. Double tunnelling is shown to obtain giant Kerr dispersion compared with single tunnelling. High conduction- and low valence-band tunnelling components are required to obtain high Kerr dispersion. Working with one tunnel component reduced Kerr dispersion and switching between subluminal and superluminal can be obtained and the EIT window can be removed.
In this working, we introduce a Q-DD composed of two QDs. We find that the absorption and dispersion spectra of the light pulse can be changed via the effect of and inter-dot tunnel couplings and probe pumping field of QDs. Then, we employ the steady state and dynamical state in the four-level double QDs system. The slope of dispersion switches from positive to negative. Therefore, both superluminal and Subluminal light propagations can be achieved by simply applying a gate voltage to the double inter dot tunnel coupling. It is also demonstrated that by applying the indirect pump probe field to the probe transition the absorption-free superluminal light propagation is obtained. The results show that by proper tuning of the bias voltage. This structure also indicates that a wide range of linearity from negative to positive can be simply adjusted via a bias voltage, which would result in wide control of signal beam.