A scalable cavity-based spin–photon interface in a photonic integrated circuit
Kevin C. Chen, Ian Christen, Hamza Raniwala, Marco Colangelo, Lorenzo De Santis, Katia Shtyrkova, David J. Starling, Ryan P. Murphy, Linsen Li, Karl K. Berggren, P. Ben Dixon, Matthew E. Trusheim, Dirk Englund
A central challenge in quantum networking is transferring quantum states between different physical modalities, such as between flying photonic qubits and stationary quantum memories. One implementation entails using spin–photon interfaces that combine solid-state spin qubits, such as color centers in diamond, with photonic nanostructures. However, while high-fidelity spin–photon interactions have been demonstrated on isolated devices, building practical quantum repeaters requires scaling to large numbers of interfaces yet to be realized. Here, we demonstrate integration of nanophotonic cavities containing tin-vacancy (SnV) centers in a photonic integrated circuit (PIC). Out of a six-channel quantum microchiplet (QMC), we find four coupled SnV-cavity devices with an average Purcell factor of ∼7. Based on system analyses and numerical simulations, we find with near-term improvements this multiplexed architecture can enable high-fidelity quantum state transfer, paving the way toward building large-scale quantum repeaters.
A central challenge in quantum networking is transferring quantum states between different physical modalities, such as between flying photonic qubits and stationary quantum memories. One implementation entails using spin–photon interfaces that combine solid-state spin qubits, such as color centers in diamond, with photonic nanostructures. However, while high-fidelity spin–photon interactions have been demonstrated on isolated devices, building practical quantum repeaters requires scaling to large numbers of interfaces yet to be realized. Here, we demonstrate integration of nanophotonic cavities containing tin-vacancy (SnV) centers in a photonic integrated circuit (PIC). Out of a six-channel quantum microchiplet (QMC), we find four coupled SnV-cavity devices with an average Purcell factor of ∼7. Based on system analyses and numerical simulations, we find with near-term improvements this multiplexed architecture can enable high-fidelity quantum state transfer, paving the way toward building large-scale quantum repeaters.
The realization of quantum networks critically depends on establishing efficient, coherent light-matter interfaces. Optically active spins in diamond have emerged as promising quantum nodes based on their spin-selective optical transitions, long-lived spin ground states, and potential for integration with nanophotonics. Tin-vacancy (SnV-) centers in diamond are of particular interest because they exhibit narrow-linewidth emission in nanostructures and possess long spin coherence times at temperatures above 1 K. However, a nanophotonic interface for SnV- centers has not yet been realized. Here, we report cavity enhancement of the emission of SnV- centers in diamond. We integrate SnV- centers into one-dimensional photonic crystal resonators and observe a 40-fold increase in emission intensity. The Purcell factor of the coupled system is 25, resulting in channeling of the majority of photons (90%) into the cavity mode. Our results pave the way for the creation of efficient, scalable spin-photon interfaces based on SnV- centers in diamond.
Building quantum networks requires efficient coupling of solid-state quantum emitters to photonic devices. Tinvacancy center (SnV) has attracted much interest for having long spin coherence times at temperatures above 1 K. Employing SnV as an optically addressable qubit requires integration with photonic structures to both route the emitted photons and enhance the light-matter interaction. We present incorporation of high-quality SnV centers with narrow linewidths in suspended diamond waveguides. Furthermore, we fabricate photonic crystal cavities in diamond with embedded SnV centers. We observe strong intensity enhancement of the photon emission when the cavity is resonant with the color center. Time-resolved photoluminescence measurements confirm that this effect is due to radiative Purcell enhancement of the spontaneous emission. Finally, we demonstrate Stark tuning of transition frequency of SnV centers, essential for multiemitter applications. These results are a significant step toward color-center-based quantum information processing applications without the need for dilution refrigerators.
The negatively charged tin-vacancy center in diamond (SnV−) is an excellent solid state qubit with optically-addressable transitions and a long electron spin coherence time at elevated (∼1.7 K). However, implementing scalable quantum nodes with high-fidelity optical readout of the electron spin state requires efficient photon emission and collection from the system. In this manuscript, we report a quantum photonic interface for SnV− centers based on one-dimensional photonic crystal cavities fabricated in diamond thin films. Furthermore, we provide a rigorous description of the spontaneous emission dynamics of our system, taking into account individual contributions from both the C and D transitions of the emitter. This allows for determination of Purcell factors per transition and, by extension, the C/D branching ratio SnV− zero phonon line. We observe quality factors up to $\sim$6000 across this sample, and measure up to a 12-fold lifetime reduction, which translates into a Purcell factor of FC=26.2±1.5 for a targeted C transition. By considering the cavity mode polarization alignment with the C and D transition dipole moments, we validate the C/D branching ratio to be ηBR=0.75±0.01, in line with previous theoretical and experimental findings.
Solid-state quantum light sources offer a scalable pathway for interfacing stationary spin qubits with flying photonic qubits, forming the backbone of future quantum networks. Telecom-band spin-photonic qubits, operating in the 1260-1675 nm wavelength range, are particularly well-suited for long-distance quantum communication due to minimal loss in standard optical fibers. Achieving scalability, however, hinges on fulfilling several stringent criteria: coherent spin-state control, deterministic and indistinguishable single-photon emission, and integration with nanophotonic structures that enhance radiative properties, such as lifetime, coherence, and photon indistinguishability. This study explores the state-of-the-art spin-photonic qubits across solid-state platforms, including diamond color centers, silicon carbide defect centers, quantum dots, and two-dimensional materials. Special attention is given to silicon-based emitters, particularly G, T, C- and Ci-centers, which promise monolithic integration with complementary metal-oxide-semiconductor (CMOS) technology and telecom-band operation. We classify these systems based on spin-photon interface availability, CMOS process compatibility, and emitter scalability. We also discuss recent advances in cavity quantum electrodynamics (cQED), including Purcell enhancement and quality factor engineering in integrated photonic (circuits) environments. The work highlights emerging demonstrations of quantum networking over metropolitan scales and outlines the trajectory toward chip-scale quantum photonic integrated circuits (QPICs). It combines deterministic emitter creation, coherent spin manipulation, and quantum information processing. These developments pave the way for global quantum networks, enabling secure communication, distributed quantum computing, and quantum-enhanced sensing.
Nanophotonics provides a promising approach to advance quantum technology by replicating fundamental building blocks of nanoscale quantum optic systems in large numbers with high reproducibility on monolithic chips. While photonic integrated circuit components and single-photon detectors offer attractive performance on silicon chips, the large-scale integration of individually accessible quantum emitters has remained a challenge. Here, we demonstrate simultaneous optical access to several integrated solid-state spin systems with Purcell-enhanced coupling of single photons with high modal purity from lithographically positioned nitrogen vacancy centers into photonic integrated circuits. Photonic crystal cavities embedded in networks of tantalum pentoxide-on-insulator waveguides provide efficient interfaces to quantum emitters that allow us to optically detect magnetic resonances (ODMR) as desired in quantum sensing. Nanophotonic networks that provide configurable optical interfaces to nanoscale quantum emitters via many independent channels will allow for novel functionality in photonic quantum information processors and quantum sensing schemes.
Solid state quantum emitters are a leading platform for photonic quantum networking with memory nodes. However, the inhomogeneous distribution of quantum emitters, as well as several environmental factors (i.e. strain and electric fields) spread the frequency spectrum of the qubits, making them distinguishable and therefore not a reliable resource for distributed quantum entanglement. In this paper, we demonstrate a full-stack approach to integrating nearly indistinguishable tin vacancy (SnV−) quantum emitters on a frequency-tunable photonic interposer that overcomes the native distribution and static variation of quantum emitters for an indistinguishable photonic quantum networking platform. We demonstrate a silicon nitride-on-insulator photonic integrated circuit (PIC) with accompanying multiphysics digital twin (MPhDT) that guides discovery of SnV− strain-tuning parameters and informs construction of a multi-channel quantum repeater node. On this node, we achieve the first simultaneous demonstration of spectral tuning of the zero phonon line (ZPL) at GHz scale; coherent electron spin control with gate times of <80 ns; strongly- and weakly-coupled nuclear spin detection; and commercial fiber array-coupled readout of a SnV− center. Finally, we propose and simulate improvements to the architecture that achieve 99.96% connectivity of $ N \sim 1000$ emitters spanning the inhomogeneous distribution of SnV− centers in strained diamond, where distributed quantum entanglement may be realized.