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arXiv:2311.17494 · Optics Letters

Resolved Raman sideband cooling of a single optically trapped cesium atom

Zhuangzhuang Tian, Haobo Chang, Xin Lv, Mengna Yang, Zhihui Wang, Pengfei Yang, Pengfei Zhang, Gang Li, Tiancai Zhang

Published Jan 2, 2024• 9 citations
arXivHTMLPDF

Abstract

We developed a resolved Raman sideband cooling scheme that can efficiently prepare a single optically trapped cesium (Cs) atom in its motional ground states. A two-photon Raman process between two outermost Zeeman sublevels in a single hyperfine state is applied to reduce the phonon number. Our scheme is less sensitive to the variation in the magnetic field than the commonly used scheme where the two outermost Zeeman sublevels belonging to the two separate ground hyperfine states are taken. Fast optical pumping with less spontaneous emission guarantees the efficiency of the cooling process. After cooling for 50 ms, 82% of the Cs atoms populate their three-dimensional ground states. Our scheme improves the long-term stability of Raman sideband cooling in the presence of magnetic field drift and is thus suitable for cooling other trapped atoms or ions with abundant magnetic sublevels.

DOI
10.1364/ol.514160

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We developed a resolved Raman sideband cooling scheme that can efficiently prepare a single optically trapped cesium (Cs) atom in its motional ground states. A two-photon Raman process between two outermost Zeeman sublevels in a single hyperfine state is applied to reduce the phonon number. Our scheme is less sensitive to the variation in the magnetic field than the commonly used scheme where the two outermost Zeeman sublevels belonging to the two separate ground hyperfine states are taken. Fast optical pumping with less spontaneous emission guarantees the efficiency of the cooling process. After cooling for 50 ms, 82% of the Cs atoms populate their three-dimensional ground states. Our scheme improves the long-term stability of Raman sideband cooling in the presence of magnetic field drift and is thus suitable for cooling other trapped atoms or ions with abundant magnetic sublevels.
We trap neutral Cs atoms in a two-dimensional optical lattice and cool them close to the zero point of motion by resolved-sideband Raman cooling. Sideband cooling occurs via transitions between the vibrational manifolds associated with a pair of magnetic sublevels, and the required Raman coupling is provided by the lattice potential itself. We obtain mean vibrational excitations ${\overline{n}}_{x}\ensuremath{\approx}{\overline{n}}_{y}<0.024$, corresponding to a population >95>95%>95 in the vibrational ground state. Atoms in the ground state of an optical lattice provide a new system in which to explore quantum state control and subrecoil laser cooling.
This dissertation reports on quantum state preparation of cesium atoms in a two-dimensional optical lattice, by resolved-sideband Raman cooling. An optical lattice is a periodic potential produced by the light shift interaction between an atom and light field. Laser cooled atoms can become strongly localized about the bottom of potential wells in an optical lattice, where they occupy a discrete spectrum of bound vibrational energy levels. The distribution over vibrational levels of atoms in the lattice is characterized by the mean vibrational excitation, n . In an optical lattice, absorption and emission of photons from lattice beams causes n to increase in time. This source of heating is always present, but its rate can be greatly reduced in a lattice detuned far from the atomic resonance. Sideband cooling is an efficient means of transferring atoms from higher into lower-lying vibrational levels and, thus, it reduces n for the ensemble. If the sideband cooling rate is much greater than the heating rate, then n approaches zero and virtually all atoms are in the lowest vibrational level in their potential wells. Our sideband cooling scheme involves stimulated Raman transitions between bound states in the potential wells of a pair of magnetic sublevels, followed by optical pumping, for a net loss of one quantum of vibration per cooling cycle. The process accumulates 98% of atoms in the ground vibrational level of a potential well associated with a single Zeeman substate. Each atom in the lattice is then very close to a pure state. For two-dimensional lattice with sideband cooling we find nx≈ny≈0.008 &parl0;16&parr0; . Various issues related to state preparation and sideband cooling are also discussed in the context of a one dimensional lin ⊥ lin optical lattice. These include improvement of laser cooling in a near resonance lattice by application of weak magnetic fields, transfer of atoms from near into far off-resonance lattices, and heating rates in far off-resonance lattices.
A method of sideband Raman cooling to the vibrational ground state of the m=0m=0m=0 Zeeman sublevel in a far-detuned two-dimensional optical lattice is proposed. In our scheme, the Raman coupling between vibrational manifolds of the adjacent Zeeman sublevels is shifted to the red sideband due to the ac Stark effect induced by a weak pump field. Thus cooling and optical pumping to m=0m=0m=0 are achieved by purely optical means with coplanar cw laser beams. The optical lattice and cooling parameters are estimated in the framework of simple theoretical models. An application of the transverse sideband cooling method to frequency standards is discussed. Coherent population trapping for the sideband Raman transitions between the degenerate vibrational levels is predicted.
Summary form only given. Laser cooled atoms play a critical role in modern designs of frequency standards such as atomic fountains. Recently, an elegant and efficient method of two-dimensional cooling to the vibrational ground state of a far-off resonance optical lattice has been demonstrated. This method is a variant of Raman sideband cooling based on the Raman transitions between the vibrational manifolds of adjacent Zeeman substates. A static magnetic field is used to tune the Zeeman levels so that Raman resonance occurs on the red sideband and results in cooling. Two circularly polarized fields are used to recycle the atoms for repetitive Raman cooling. Unfortunately, a direct application of this scheme to frequency standards meets with several difficulties. Stimulated by these concepts and results, we propose a new variant of transverse sideband cooling, where these problems are avoided, while still maintaining most of the attractive features. The field configuration used for the optical lattice consists of three linearly polarized beams having equal amplitudes and propagating in the xy plane with angles of 2/spl pi//3 between each other. The polarization vectors of these beams are tilted through a small angle with respect to the z-axis. All the beams have the same frequency far-detuned to the red of the D/sub 2/ resonance line. Raman transitions between vibrational levels of adjacent magnetic substates are induced by the small in-plane component of the field. Two other important requirements for Raman sideband cooling are a uniform energy shift of the magnetic sublevels and optical pumping.
We report enhanced three-dimensional degenerated Raman sideband cooling (3D DRSC) of caesium (Cs) atoms in a standard single-cell vapour-loaded magneto-optical trap. Our improved scheme involves using a separate repumping laser and optimized lattice detuning. We load 1.5 × 10 7 atoms into the Raman lattice with a detuning of −15.5 GHz (to the ground F = 3 state). Enhanced 3D DRSC is used to cool them from 60 µ K to 1.7 µ K within 12 ms and the number of obtained atoms is about 1.2 × 10 7 . A theoretical model is proposed to simulate the measured number of trapped atoms. The result shows good agreement with the experimental data. The technique paves the way for loading a large number of ultracold Cs atoms into a crossed dipole trap and efficient evaporative cooling in a single-cell system.
We combine near-deterministic preparation of a single atom with Raman sideband cooling, to create a push-button mechanism to prepare a single atom in the motional ground state of tightly focused optical tweezers. In the two-dimensional (2D) radial plane, we achieve a large ground-state fidelity for the entire procedure (loading and cooling) of $\ensuremath{\sim}0.73$, while the ground-state occupancy is $\ensuremath{\sim}0.88$ for realizations with a single atom present. For 1D axial cooling, we attain a ground-state fraction of $\ensuremath{\sim}0.52$. The combined 3D cooling provides a ground-state population of $\ensuremath{\sim}0.11$. Our Raman sideband cooling variation is indifferent to magnetic field fluctuations, allowing widespread unshielded experimental implementations. Our work provides a pathway towards a range of coherent few-body experiments.